STTH8006 Turbo 2 ultrafast high voltage rectifier Main product characteristics IF(AV) 80 A VRRM 600 V Tj 175 °C VF (typ) 1.02 V trr (max) A K 70 ns DO-247 STTH8006W Features and benefits ■ Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces switching and conduction losses Description The STTH8006, which is using ST Turbo 2 600V technology, is specially suited for use in switching power supplies, and industrial applications, as rectification and discontinuous mode PFC boost diode. Thanks to its low VF characteristics, this device exhibits high performances in freewheeling applications. Table 1. Order Code Part number Marking STTH8006W STTH8006W Absolute ratings (limiting values, at Tamb = 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V IF(RMS) RMS forward voltage 113 A 80 A 500 A -65 to + 175 °C 175 °C δ = 0.5 IF(AV) Average forward current Tc = 75 °C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal Tstg Storage temperature range Tj December 2006 Maximum operating junction temperature Rev 1 1/6 www.st.com 6 Characteristics STTH8006 1 Characteristics Table 2. Thermal resistance Symbol Parameter Value (max). Unit 0.75 °C/W Junction to case Rth(j-c) Table 3. Static electrical characteristics Symbol Parameter Test conditions IR(1) Reverse leakage current VF(2) Forward voltage drop Tj = 25 °C Min. Typ Max. Unit 50 Tj = 150 °C Tj = 25 °C VR = VRRM µA 160 1600 1.60 Tj = 150 °C IF = 80 A V 1.02 1.30 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 % To evaluate the conduction losses use the following equation: P = 0.98 x IF(AV) + 0.004 IF2(RMS) Table 4. Dynamic characterstics Symbol Parameter Test conditions trr Reverse recovery time Tj = 25°C IRM Reverse recovery current tfr VFP Figure 1. Min. Typ Max. IF = 0.5 A Irr = 0.25 A IR =1 A Unit 70 ns IF = 1 A dIF/dt = 50 A/µs VR =30 V 75 105 Tj = 125°C VR = 400 V IF = 80 A dIF/dt = 100 A/µs 14 19 A Forward recovery time Tj = 25°C IF = 80 A dIF/dt = 200 A/µs VFR = 1.1 x VFmax 600 ns Forward recovery voltage Tj = 25°C IF = 80 A dIF/dt = 200 A/µs VFR = 1.1 x VFmax Conduction losses versus average forward current Figure 2. 3.7 V Forward voltage drop versus forward current IFM(A) P(W) 140 200 δ=0.5 δ=1 180 120 δ=0.2 160 δ=0.1 100 Tj=150°C (Maximum values) 140 δ=0.05 120 80 Tj=25°C (Maximum values) Tj=150°C (Typical values) 100 60 80 60 40 T 40 20 δ=tp/T IF(AV)(A) 20 tp 0 2/6 VFM(V) 0 0 10 20 30 40 50 60 70 80 90 100 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 STTH8006 Characteristics Figure 3. 1.0 Relative variation of thermal impedance junction to case versus pulse duration Peak reverse recovery current versus dIF/dt (typical values) IRM(A) Zth(j-c)/Rth(j-c) 55 Single pulse 0.9 Figure 4. IF=80A VR=400V Tj=125°C 50 45 0.8 40 0.7 35 0.6 30 0.5 25 0.4 20 0.3 15 0.2 10 0.1 5 tp(s) 0.0 1.E-03 1.E-02 Figure 5. 800 dIF/dt(A/µs) 0 1.E-01 1.E+00 0 50 Reverse recovery time versus dIF/dt Figure 6. (typical values) trr(ns) 3.0 IF = 80A VR=400V Tj=125°C 700 100 150 200 250 300 350 400 450 500 Reverse recovery charges versus dIF/dt (typical values) Qrr(µC) IF = 80A VR=400V Tj=125°C 2.5 600 2.0 500 400 1.5 300 1.0 200 0.5 100 dIF/dt(A/µs) dIF/dt(A/µs) 0 0.0 0 50 100 Figure 7. 150 200 250 300 350 400 450 500 Relative variations of dynamic parameters versus junction temperature 0 100 Figure 8. 200 300 400 500 Transient peak forward voltage versus dIF/dt (typical values) VFP(V) 1.4 8 IF=80A VR=400V Reference: Tj=125°C 1.2 IF=80A Tj=125°C 7 6 1.0 5 0.8 QRR 4 0.6 3 tRR 0.4 IRM 2 0.2 Tj(°C) 1 dIF/dt(A/µs) 0.0 25 50 75 100 125 0 0 50 100 150 200 250 300 350 400 450 500 3/6 Package information STTH8006 Figure 9. Junction capacitance versus reverse voltage applied (typical values) C(pF) 1000 F=1MHz VOSC=30mVRMS Tj=25°C 100 VR(V) 10 1 2 10 100 1000 Package information ● Epoxy meets UL94, V0 ● Cooling method: by conduction (C) ● Recommended torque value: 0.8 Nm. ● Maximum torque value: 1.0 Nm. Table 5. DO-247 dimensions DIMENSIONS REF Millimeters Inches V Min Dia. V A H L5 L L2 L4 F2 L3 L1 F3 D V2 F G 4/6 M E Typ Max Min A 4.85 5.15 0.191 D 2.20 2.60 0.086 E 0.40 0.80 0.015 F 1.00 1.40 0.039 F2 2.00 F3 2.00 2.40 0.078 G 10.90 H 15.45 15.75 0.608 L 19.85 20.15 0.781 L1 3.70 4.30 0.145 L2 18.50 L3 14.20 14.80 0.559 L4 34.60 L5 5.50 M 2.00 3.00 0.078 V 5° V2 60° Dia. 3.55 3.65 0.139 Typ Max 0.203 0.102 0.031 0.055 0.078 0.094 0.429 0.620 0.793 0.169 0.728 0.582 1.362 0.216 0.118 5° 60° 0.143 STTH8006 Ordering information In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 3 4 Ordering information Part number Marking Package Weight Base qty Delivery mode STTH8006W STTH8006W DO-247 4.40 g 30 Tube Revision history Date Revision 15-Dec-2006 1 Changes Initial release. 5/6 STTH8006 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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