STTH806DTI Tandem 600 V hyperfast boost diode Table 1. Main product characteristics IF(AV) 8A VRRM 600 V Tj (max) 150° C VF (max) 2.24 V IRM (typ.) 4A trr (typ.) 13 ns 1 2 2 1 Insulated TO-220AC Features and benefits ■ Especially suited as boost diode in continuous mode power factor correctors and hard switching conditions ■ Designed for high di/dt operation. Hyperfast recovery current to compete with SiC devices. Allows downsizing of mosfet and heatsinks ■ Internal ceramic insulated devices with equal thermal conditions for both 300 V diodes ■ Insulation (2500 VRMS) allows placement on same heatsink as mosfet and flexible heatsinking on common or separate heatsink ■ ■ Description The TURBOSWITCH “H” is an ultra high performance diode composed of two 300 V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dIF/dt. Table 2. Static and dynamic equilibrium of internal diodes are warranted by design Order codes Part number Marking STTH806DTI STTH806DTI Package Capacitance: C = 7 pF Table 3. Absolute ratings (limiting values) Symbol VRRM IF(RMS) Parameter Value Unit Repetitive peak reverse voltage 600 V RMS forward voltage 14 A 180 A -65 to + 150 °C 150 °C IFSM Surge non repetitive forward current Tstg Storage temperature range Tj July 2007 tp = 10 ms sinusoidal Maximum operating junction temperature Rev 5 1/7 www.st.com 7 Characteristics STTH806DTI 1 Characteristics Table 4. Thermal parameter Symbol Rth(j-c) Table 5. Symbol Parameter Value Unit 2.6 °C/W Junction to case thermal resistance Static electrical characteristics Parameter IR (1) Reverse leakage current VF (2) Forward voltage drop Test conditions Tj = 25° C Min. Typ Max. Unit 10 Tj = 125° C Tj = 25° C VR = VRRM µA 15 100 3.6 Tj = 150° C IF = 8 A V 1.95 2.4 1. Pulse test: tp = 100 ms, δ < 2% 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 1.7 x IF(AV) + 0.087 IF2(RMS) Table 6. Symbol Dynamic characteristics Parameter Test conditions Min Typ Max Unit IF = 0.5 A, Irr = 0.25 A, IR = 1 A trr IRM S Qrr Table 7. Symbol tfr VFP 2/7 Reverse recovery time 13 ns Tj = 25° C I = 1 A, dI /dt = - 50 A/µs F F VR = 30 V 30 Reverse recovery current 4 I = 8 A, VR = 400, Reverse recovery softness factor Tj = 125° C F VdIF/dt = - 200 A/µs Reverse recovery charges 5.5 0.4 A 50 Turn-on switching characteristics Parameter Test conditions Min. Typ Max. Unit Forward recovery time Tj = 25° C IF = 8 A, dIF/dt = 100 A/µs VFR = 1.1 x VF max 200 ns Forward recovery voltage Tj = 25° C IF = 8 A, dIF/dt = 100 A/µs 7 V STTH806DTI Figure 1. Characteristics Conduction losses versus average Figure 2. current P(W) Forward voltage drop versus forward current IFM(A) 30 δ = 0.1 δ = 0.05 25 δ = 0.2 100 δ = 0.5 Tj=125°C (maximum values) δ=1 20 Tj=125°C (typical values) 15 Tj=25°C (maximum values) 10 10 T 5 δ=tp/T IF(AV)(A) tp VFM(V) 0 1 0 1 Figure 3. 2 3 4 5 6 7 8 9 0 10 Relative variation of thermal impedance junction to case versus pulse duration 1 Figure 4. 2 3 4 5 6 7 8 Peak reverse recovery current versus dIF/dt (typical values) IRM(A) Zth(j-c)/Rth(j-c) 9 1.0 VR=400V Tj=125°C 8 IF=2 x IF(AV) 7 0.8 IF=IF(AV) 6 IF=0.5 x IF(AV) δ = 0.5 0.6 5 4 0.4 δ = 0.2 3 δ = 0.1 T 0.2 2 Single pulse tp(s) δ=tp/T 0.0 1E-3 1E-2 1 tp 1E-1 dIF/dt(A/µs) 1E+0 0 0 Figure 5. 50 Reverse recovery time versus dIF/dt Figure 6. (typical values) trr(ns) 100 150 200 250 300 350 400 450 500 Reverse charges versus dIF/dt (typical values) Qrr(nC) 140 60 VR=400V Tj=125°C VR=400V Tj=125°C 100 IF=2 x IF(AV) 40 IF=2 x IF(AV) 120 50 IF=IF(AV) IF=IF(AV) 80 IF=0.5 x IF(AV) 30 IF=0.5 x IF(AV) 60 20 40 10 20 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 0 50 100 150 200 250 300 350 400 450 500 0 100 200 300 400 500 3/7 Characteristics Figure 7. STTH806DTI Softness factor versus dIF/dt (typical values) Figure 8. S 2.6 0.6 IF=IF(AV) VR=400V Reference: Tj=125°C 2.4 IF<2xIF(AV) VR=400V Tj=125°C 0.5 Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125° C) 2.2 2.0 1.8 0.4 S 1.6 1.4 0.3 1.2 1.0 0.2 0.6 0.1 0.4 dIF/dt(A/µs) 0 50 Figure 9. 100 150 200 250 300 350 400 450 500 Transient peak forward voltage versus dIF/dt (typical values) 0.0 25 50 75 100 125 Figure 10. Forward recovery time versus dIF/dt (typical values) VFP(V) 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Tj(°C) 0.2 0.0 tfr(ns) 200 IF=IF(AV) Tj=125°C IF=IF(AV) VFR=1.1 x VF max. Tj=125°C 180 160 140 120 100 80 60 40 20 dIF/dt(A/µs) dIF/dt(A/µs) 0 0 4/7 IRM 0.8 50 100 150 200 250 300 350 400 450 500 0 100 200 300 400 500 STTH806DTI 2 Package information Package information ● Epoxy meets UL94, V0 ● Cooling method: C ● Recommended torque value: 0.4 to 0.6 Nm Table 8. TO-220AC insulated dimensions Dimensions Ref. Millimeters Min. A ØI 15.20 a1 C B b2 L Typ. Max. Inches Min. Typ. 15.90 0.598 3.75 Max. 0.625 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 4.80 5.40 0.189 0.212 F 6.20 6.60 0.244 0.259 ØI 3.75 3.85 0.147 0.151 I4 15.80 16.40 16.80 0.622 0.646 0.661 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 F A I4 c2 a1 l2 a2 M b1 e c1 M 2.60 0.102 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 5/7 Ordering information 3 Ordering information Table 9. 4 Ordering information Part number Marking Package Weight Base qty Delivery mode STTH806DTI STTH806DTI TO-220AC 2.3 g 50 Tube Revision history Table 10. 6/7 STTH806DTI Revision history Date Revision Changes Oct-2003 2A Initial release May-2004 3 Reformatted 29-Jun-2005 4 Corrections to typographical errors. No technical changes. 11-Jul-2007 5 Reformatted to current standards. Removed IPEAK parameter from Table 3: Absolute ratings (limiting values). STTH806DTI Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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