T1235H ® 12A TRIACS SNUBBERLESS™ HIGH TEMPERATURE Table 1: Main Features A2 Symbol Value Unit IT(RMS) 12 A VDRM/VRRM 600 V IGT (Q1) 35 mA G A1 A2 A2 A1 A2 DESCRIPTION Specifically designed for use in high temperature environment (found in hot appliances such as cookers, ovens, hobs, electric heaters, coffee machines...), the new 12 Amps T1235H triacs provide an enhanced performance in terms of power loss and thermal dissipation. This allows for optimization of the heatsinking dimensioning, leading to space and cost effectivness when compared to electro-mechnical solutions. Based on ST snubberless technology, they offer high commutation switching capabilities and high noise immunity levels. And, thanks to their clip assembly technique, they provide a superior performance in surge current handling. A1 A2 G G D2PAK (T1235H-600G) Table 2: Order Codes Part Number T1235H-600G T1235H-600G-TR T1235H-600TRG TO-220AB (T1235H-600T) Marking T1235H600G T1235H600G T1235H600T Table 3: Absolute Maximum Ratings Symbol IT(RMS) ITSM I²t dI/dt Parameter PG(AV) Tstg Tj February 2006 Unit A RMS on-state current (full sine wave) Tc = 135°C 12 Non repetitive surge peak on-state F = 50 Hz current (full cycle, Tj initial = 25°C) F = 60 Hz t = 20 ms 140 t = 16.7 ms 145 I²t Value for fusing tp = 10 ms Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz VDSM/VRSM Non repetitive surge peak off-state tp = 10 ms voltage IGM Value Peak gate current tp = 20 µs Average gate power dissipation Storage junction temperature range Operating junction temperature range REV. 6 A 112 A²s Tj = 150°C 50 A/µs Tj = 25°C 700 V Tj = 150°C 4 A Tj = 150°C 1 W - 40 to + 150 - 40 to + 150 °C 1/8 T1235H Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified) Symbol IGT (1) VGT Test Conditions VD = 12 V RL = 33 Ω VGD VD = VDRM RL = 3.3 kΩ IH (2) IT = 100 mA IL IG = 1.2 IGT dV/dt (2) Quadrant Tj = 150°C MAX. 35 mA I - II - III MAX. 1.3 V I - II - III MIN. 0.15 V MAX. 35 mA II (dI/dt)c (2) Without snubber Unit I - II - III I - III VD = 67 %VDRM gate open Value Tj = 150°C Tj = 150°C MAX. 50 80 mA MIN. 300 V/µs MIN. 5.3 A/ms Value Unit Table 5: Static Characteristics Symbol Test Conditions VT (2) ITM = 17 A Vto (2) Rd (2) IDRM IRRM tp = 380 µs Tj = 25°C MAX. 1.55 V Threshold voltage Tj = 150°C MAX. 0.80 V Dynamic resistance Tj = 150°C MAX. 25 mΩ 5 µA Tj = 25°C VDRM = VRRM Tj = 150°C VDRM/VRRM = 400V (at mains peak voltage) Tj = 150°C MAX. 5.5 mA 3.5 Note 1: minimum IGT is guaranted at 10% of IGT max. Note 2: for both polarities of A2 referenced to A1. Table 6: Thermal resistance Symbol Rth(j-c) Rth(j-a) Parameter Unit 1.2 °C/W TO-220AB Junction to ambient S = Copper surface under tab. 2/8 D2PAK Junction to case (AC) Value S = 1 cm² D2PAK 45 TO-220AB 60 °C/W T1235H Figure 1: Maximum power dissipation versus RMS on-state current (full cycle) Figure 2: RMS on-state current versus case temperature (full cycle) P(W) IT(RMS)(A) 14 14 12 12 10 10 8 8 6 6 4 4 2 2 TC(°C) IT(RMS)(A) 0 0 0 2 4 6 8 10 0 12 Figure 3: RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35µm) (full cycle) 25 50 75 100 125 150 Figure 4: Relative variation of thermal impedance versus pulse duration IT(RMS)(A) K=[Zth/Rth] 5 1.00 2 D PAK (S=1cm2) Zth(j-c) 4 3 Zth(j-a) 0.10 2 1 tp(s) TC(°C) 0.01 0 0 25 50 75 100 125 1E-3 150 Figure 5: On-state characteristics (maximum values) 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Figure 6: Surge peak on-state current versus number of cycles ITM(A) ITSM(A) 200 150 Tj max. Vto = 0.85V Rd = 50 mΩ 100 Tj = Tj max. 125 t=20ms 100 One cycle Non repetitive Tj initial=25°C 75 Tj = 25°C. 10 Repetitive TC=135°C 50 25 Number of cycles VTM(V) 0 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 1000 3/8 T1235H Figure 7: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms and corresponding value of I2t 2 Figure 8: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 2 ITSM(A), I t (A s) 2.5 2000 Tj initial=25°C dI/dt limitation: 50A/µs 2.0 1000 IGT 1.5 IH & IL 1.0 ITSM 0.5 tp(ms) Tj(°C) I2t 0.0 100 0.01 0.10 1.00 -40 10.00 Figure 9: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values) -20 0 20 40 60 80 100 120 140 160 Figure 10: Relative variation of critical rate of decrease of main current versus junction temperature (dI/dt)c [Tj] / (dI/dt)c [Tj = 150°C] (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 8 6.0 7 5.0 6 4.0 5 4 3.0 3 2.0 2 1.0 1 (dV/dt)c (V/µs) 0.0 Tj(°C) 0 0.1 1.0 10.0 100.0 Figure 11: Leakage current versus junction temperature for different values of blocking voltage (typical values) 25 50 75 100 125 150 Figure 12: Acceptable repetitive peak off-state voltage versus case-ambient thermal resistance VDRM / VRRM (V) IDRM / IRRM (mA) 700 1E+1 600 1E+0 Tj = 150°C Rth(j-c) = 1.2°C/W 500 VD = VR = 600V 400 VD = VR = 400V 1E-1 300 VD = VR = 200V 200 1E-2 100 Tj(°C) 1E-3 50 4/8 Rth(c-a)(°C/W) 0 75 100 125 150 0 2 4 6 8 10 12 14 16 18 20 T1235H Figure 13: D2PAK Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35 µm) Rth(j-a)(°C/W) 80 D2PAK 70 60 50 40 30 20 10 S(cm²) 0 0 4 8 12 16 20 24 28 32 36 40 Figure 14: Ordering Information Scheme T 12 35 H - 600 G (-TR) Triac series Current 12 = 12A Sensitivity 35 = 35mA Temperature H = High Voltage 600 = 600V Package G = D2PAK T = TO-220AB Packing mode Blanck = D2PAK in Tube RG = TO-220AB in Tube -TR = Tape & Reel Table 7: Product Selector Part Numbers Voltage Sensitivity Type Package T1235H-600G 600 V 35 mA Snubberless D2PAK T1235H-600T 600 V 35 mA Snubberless TO-220AB 5/8 T1235H Figure 15: D2PAK Package Mechanical Data REF. A E C2 L2 D L L3 A1 B2 R C B G A2 2.0 MIN. FLAT ZONE V2 Figure 16: D2PAK Foot Print Dimensions (in millimeters) 16.90 10.30 5.08 1.30 3.70 8.90 6/8 A A1 A2 B B2 C C2 D E G L L2 L3 R V2 DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. 4.30 4.60 0.169 2.49 2.69 0.098 0.03 0.23 0.001 0.70 0.93 0.027 1.25 1.40 0.048 0.055 0.45 0.60 0.017 1.21 1.36 0.047 8.95 9.35 0.352 10.00 10.28 0.393 4.88 5.28 0.192 15.00 15.85 0.590 1.27 1.40 0.050 1.40 1.75 0.055 0.40 0.016 0° 8° 0° Max. 0.181 0.106 0.009 0.037 0.024 0.054 0.368 0.405 0.208 0.624 0.055 0.069 8° T1235H Figure 17: TO-220AB and TO-220AB Insulated Package Mechanical Data B C REF. b2 L F I A l4 c2 a1 l3 l2 a2 b1 M c1 e A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. 15.20 15.90 0.598 3.75 0.147 13.00 14.00 0.511 10.00 10.40 0.393 0.61 0.88 0.024 1.23 1.32 0.048 4.40 4.60 0.173 0.49 0.70 0.019 2.40 2.72 0.094 2.40 2.70 0.094 6.20 6.60 0.244 3.75 3.85 0.147 15.80 16.40 16.80 0.622 0.646 2.65 2.95 0.104 1.14 1.70 0.044 1.14 1.70 0.044 2.60 0.102 Max. 0.625 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.661 0.116 0.066 0.066 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. Table 8: Ordering Information Ordering type Marking Package Weight Base qty Delivery mode T1235H-600TRG T1235H600T TO-220AB 2.3 g 50 Tube T1235H-600G T1235H600G Tube T1235H600G 1.5 g 50 T1235H-600G-TR D2PAK 1000 Tape & reel Table 9: Revision History Date Revision Apr-2002 5A 13-Feb-2006 6 Description of Changes Last update. TO-220AB delivery mode changed from bulk to tube. ECOPACK statement added. 7/8 T1235H Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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