STMICROELECTRONICS TDE1897R_03

TDE1897R
TDE1898R
®
0.5A HIGH-SIDE DRIVER
INDUSTRIAL INTELLIGENT POWER SWITCH
0.5A OUTPUT CURRENT
18V TO 35V SUPPLY VOLTAGE RANGE
INTERNAL CURRENT LIMITING
THERMAL SHUTDOWN
OPEN GROUND PROTECTION
INTERNAL NEGATIVE VOLTAGE CLAMPING
TO VS - 45V FOR FAST DEMAGNETIZATION
DIFFERENTIAL INPUTS WITH LARGE COMMON MODE RANGE AND THRESHOLD
HYSTERESIS
UNDERVOLTAGE LOCKOUT WITH HYSTERESIS
OPEN LOAD DETECTION
TWO DIAGNOSTIC OUTPUTS
OUTPUT STATUS LED DRIVER
DESCRIPTION
The TDE1897R/TDE1898R is a monolithic Intelligent Power Switch in Multipower BCD Technol-
MULTIPOWER BCD TECHNOLOGY
Minidip
SIP9
SO20
ORDERING NUMBERS:
TDE1897RDP
TDE1898RDP
TDE1898RSP
TDE1897RFP
TDE1898RFP
ogy, for driving inductive or resistive loads. An internal Clamping Diode enables the fast demagnetization of inductive loads.
Diagnostic for CPU feedback and extensive use
of electrical protections make this device inherently indistructible and suitable for general purpose industrial applications.
BLOCK DIAGRAM
September 2003
1/12
This is advanced information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
TDE1897R - TDE1898R
PIN CONNECTIONS (Top view)
SO20
Minidip
SIP9
ABSOLUTE MAXIMUM RATINGS (Minidip pin reference)
Symbol
VS
VS – VO
Parameter
Supply Voltage (Pins 3 - 1) (TW < 10ms)
Supply to Output Differential Voltage. See also VCl 3-2 (Pins 3 - 2)
Vi
Vi
Input Voltage (Pins 7/8)
Differential Input Voltage (Pins 7 - 8)
Ii
IO
Input Current (Pins 7/8)
Output Current (Pins 2 - 1). See also ISC
El
Energy from Inductive Load (TJ = 85°C)
Ptot
Top
Power Dissipation. See also THERMAL CHARACTERISTICS.
Operating Temperature Range (Tamb)
Tstg
Storage Temperature
Value
Unit
50
internally limited
V
V
-10 to VS +10
43
V
V
20
internally limited
mA
A
200
mJ
internally limited
-25 to +85
W
°C
-55 to 150
°C
THERMAL DATA
Symbol
Rth j-case
Rth j-amb
2/12
Description
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Minidip
Sip
100
10
70
SO20
Unit
90
°C/W
°C/W
TDE1897R - TDE1898R
ELECTRICAL CHARACTERISTICS (VS = 24V; Tamb = –25 to +85°C, unless otherwise specified)
Symbol
Vsmin 3
Parameter
Test Condition
Supply Voltage for Valid
Diagnostics
Min.
Idiag > 0.5mA @ Vdg1 = 1.5V
Typ.
9
Vs 3
Supply Voltage (operative)
Iq 3
Quiescent Current
Iout = Ios = 0
Vil
Vih
Vsth1
Undervoltage Threshold 1
(See fig. 1); Tamb = 0 to +85°C
Vsth2 3
Vshys
Undervoltage Threshold 2
Supply Voltage Hysteresis
(See fig. 1); Tamb = 0 to +85°C
(See fig. 1); Tamb = 0 to +85°C
0.4
Short Circuit Current
VS = 18 to 35V; RL = 1Ω
0.75
Output Voltage Drop
@ Iout = 625mA; Tj = 25°C
@ Iout = 625mA; Tj = 125°C
Ioslk 2
Vol 2
Output Leakage Current
@ Vi = Vil , Vo = 0V
Low State Out Voltage
@ Vi = Vil; RL = ∞
Vcl 3-2
Iold 2
Internal Voltage Clamp (VS - VO)
Open Load Detection Current
@ IO = -500mA
Vi = Vih; Tamb = 0 to +85°C
Vid 7-8
Common Mode Input Voltage
Range (Operative)
VS = 18 to 35V,
VS - Vid 7-8 < 37V
Iib 7-8
Vith 7-8
Input Bias Current
Input Threshold Voltage
Vi = –7 to 15V; –In = 0V
V+In > V–In
Viths 7-8
Input Threshold Hysteresis
Voltage
V+In > V–In
Rid 7-8
Diff. Input Resistance
@ 0 < +In < +16V; –In = 0V
@ –7 < +In < 0V; –In = 0V
Iilk 7-8
Input Offset Current
V+In = V–In
0V < Vi <5.5V
+Ii
–Ii
–20
–75
–25
–In = GND
0V < V+In <5.5V
+Ii
–Ii
–250
+10
–125
+In = GND
0V < V–In <5.5V
+Ii
–Ii
–100
–50
–30
–15
Isc
Vdon 3-2
18
Unit
35
V
24
35
V
2.5
4.5
4
7.5
mA
mA
1
15.5
3
V
V
1.5
A
250
400
425
600
mV
mV
300
µA
11
V
0.8
1.5
V
45
0.5
55
9.5
V
mA
–7
15
V
–700
0.8
700
2
µA
V
400
mV
1.4
50
400
150
Voth1 2
Output Status Threshold 1
Voltage
(See fig. 1)
Voth2 2
Output Status Threshold 2
Voltage
(See fig. 1)
9
Vohys 2
Output Status Threshold
Hysteresis
(See fig. 1)
0.3
Iosd 4
Vosd 3-4
Output Status Source Current
Active Output Status Driver
Drop Voltage
Vout > Voth1, Vos = 2.5V
Vs – Vos @ Ios = 2mA;
Tamb = -25 to 85°C
Ioslk 4
Output Status Driver Leakage
Current
Vdgl 5/6
Idglk 5/6
Vfdg 5/6-3
Max.
KΩ
KΩ
+20
µA
µA
+50
µA
µA
µA
µA
12
V
V
2
V
4
mA
5
V
Vout < Voth2 , Vos = 0V
VS = 18 to 35V
25
µA
Diagnostic Drop Voltage
D1 / D2 = L @ Idiag = 0.5mA
D1 / D2 = L @ Idiag = 3mA
250
1.5
mV
V
Diagnostic Leakage Current
D1 / D2 =H @ 0 < Vdg < Vs
VS = 15.6 to 35V
@ Idiag = 5mA; D1 / D2 = H
25
µA
2
V
Clamping Diodes at the
Diagnostic Outputs.
Voltage Drop to VS
Note Vil < 0.8V, Vih > 2V @ (V+In > V–In);
All test not dissipative.
2
0.7
Minidip pin reference.
3/12
TDE1897R - TDE1898R
SOURCE DRAIN NDMOS DIODE
Symbol
Vfsd 2-3
Parameter
Forward On Voltage
Test Condition
@ Ifsd = 625mA
Ifp 2-3
trr 2-3
Forward Peak Current
t = 10ms; d = 20%
Reverse Recovery Time
If = 625mA di/dt = 25A/µs
tfr 2-3
Forward Recovery Time
Min.
Typ.
1
Max.
1.5
Unit
V
2
A
200
ns
50
ns
150
30
°C
°C
THERMAL CHARACTERISTICS (*)
Θ Lim
TH
Junction Temp. Protect.
Thermal Hysteresis
135
SWITCHING CHARACTERISTICS (VS = 24V; RL = 48Ω) (*)
ton
Turn on Delay Time
100
µs
toff
Turn off Delay Time
20
µs
td
Input Switching to Diagnostic
Valid
100
µs
Note Vil < 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference.
(*) Not tested.
Figure 1
DIAGNOSTIC TRUTH TABLE
Diagnostic Conditions
Normal Operation
Open Load Condition (Io < Iold)
Short to VS
Short Circuit to Ground (IO = ISC)
(**)
TDE1897R
TDE1898R
Output DMOS Open
Overtemperature
Supply Undervoltage (VS < Vsth1 in the falling phase of the supply voltage; VS < Vsth2 in the rising phase of the supply voltage)
Input
L
H
L
H
Output
L
H
L
H
Diag1
H
H
H
L
Diag2
H
H
H
H
L
H
H
H
L
L
H
H
H
<H (*)
H
L
H
H
L
H
H
H
H
L
H
L
H
L
L
L
L
H
L
H
H
H
H
L
L
L
H
L
L
L
L
L
L
(*) According to the intervention of the current limiting block.
(**) A cold lamp filament, or a capacitive load may activate the current limiting circuit of the IPS, when the IPS is initially turned on. TDE1897
uses Diag2 to signal such condition, TDE1898 does not.
4/12
TDE1897R - TDE1898R
APPLICATION INFORMATION
DEMAGNETIZATION OF INDUCTIVE LOADS
An internal zener diode, limiting the voltage
across the Power MOS to between 45 and 55V
(Vcl), provides safe and fast demagnetization of
inductive loads without external clamping devices.
The maximum energy that can be absorbed from
an inductive load is specified as 200mJ (at
Tj = 85°C).
To define the maximum switching frequency three
points have to be considered:
1) The total power dissipation is the sum of the
On State Power and of the Demagnetization
Energy multiplied by the frequency.
2) The total energy W dissipated in the device
during a demagnetization cycle (figg. 2, 3) is:
W = Vcl
Figure 3: Demagnetization Cycle Waveforms
Vcl – Vs
Vs 
L

log 1 +
]
[ Io –
RL
V
– Vs 
RL
cl

Where:
Vcl = clamp voltage;
L = inductive load;
RL = resistive load;
Vs = supply voltage;
IO = ILOAD
3) In normal conditions the operating Junction
temperature should remain below 125°C.
Figure 2: Inductive Load Equivalent Circuit
Figure 4: Normalized RDSON vs. Junction
Temperature
D93IN018
α
1.8
α=
1.6
RDSON (Tj)
RDSON (Tj=25˚C)
1.4
1.2
1.0
0.8
0.6
-25
0
25
50
75
100
125
Tj (˚C)
5/12
TDE1897R - TDE1898R
WORST CONDITION POWER DISSIPATION IN
THE ON-STATE
In IPS applications the maximum average power
dissipation occurs when the device stays for a
long time in the ON state. In such a situation the
internal temperature depends on delivered current (and related power), thermal characteristics
of the package and ambient temperature.
At ambient temperature close to upper limit
(+85°C) and in the worst operating conditions, it is
possible that the chip temperature could increase
so much to make the thermal shutdown procedure untimely intervene.
Our aim is to find the maximum current the IPS
can withstand in the ON state without thermal
shutdown intervention, related to ambient temperature. To this end, we should consider the following points:
1) The ON resistance RDSON of the output
NDMOS (the real switch) of the device increases with its temperature.
Experimental results show that silicon resistivity increases with temperature at a constant
rate, rising of 60% from 25°C to 125°C.
The relationship between RDSON and temperature is therefore:
R DSON = R DSON0 ( 1 + k ) ( T j − 25 )
where:
Tj is the silicon temperature in °C
RDSON0 is RDSON at Tj=25°C
k is the constant rate (k = 4.711 ⋅ 10 −3)
(see fig. 4).
2)
In the ON state the power dissipated in the
device is due to three contributes:
a) power lost in the switch:
P out = I out 2 ⋅ R DSON (Iout is the output current);
b) power due to quiescent current in the ON
state Iq, sunk by the device in addition to
Iout: P q = I q ⋅ V s (Vs is the supply voltage);
c) an external LED could be used to visualize
the switch state (OUTPUT STATUS pin).
Such a LED is driven by an internal current
source (delivering Ios) and therefore, if Vos is
the voltage drop across the LED, the dissipated power is: P os = I os ⋅ ( V s − V os ).
Thus the total ON state power consumption is
given by:
P on = P out + P q + P os
(1)
In the right side of equation 1, the second and
6/12
the third element are constant, while the first
one increases with temperature because
RDSON increases as well.
3) The chip temperature must not exceed ΘLim
in order do not lose the control of the device.
The heat dissipation path is represented by
the thermal resistance of the system deviceboard-ambient (Rth). In steady state conditions, this parameter relates the power dissipated Pon to the silicon temperature Tj and
the ambient temperature Tamb:
T j − T amb = P on ⋅ R th
(2)
From this relationship, the maximum power Pon
which can be dissipated without exceeding
ΘLim at a given ambient temperature Tamb is:
P on =
ΘLim − T amb
R th
Replacing the expression (1) in this equation
and solving for Iout, we can find the maximum
current versus ambient temperature relationship:

√
ΘLim − T amb
I outx =
R th
− P q − P os
R DSONx
where RDSONx is RDSON at Tj=ΘLim. Of
course, Ioutx values are top limited by the
maximum operative current Ioutx (500mA
nominal).
From the expression (2) we can also find the
maximum ambient temperature Tamb at which
a given power Pon can be dissipated:
T amb = ΘLim − P on ⋅ R th =
= ΘLim − ( I out 2 ⋅ R DSONx + P q + P os ) ⋅ R th
In particular, this relation is useful to find the
maximum ambient temperature Tambx at
which Ioutx can be delivered:
T ambx = ΘLim − ( I outx 2 ⋅ R DSONx +
+ P q + P os ) ⋅ R th
(4)
Referring to application circuit in fig. 5, let us consider the worst case:
- The supply voltage is at maximum value of industrial bus (30V instead of the 24V nominal
value). This means also that Ioutx rises of 25%
TDE1897R - TDE1898R
(625mA instead of 500mA).
- All electrical parameters of the device, concerning the calculation, are at maximum values.
- Thermal shutdown threshold is at minimum
value.
- No heat sink nor air circulation (Rth equal to
Rthj-amb).
Therefore:
Vs = 30V, RDSON0 = 0.6Ω, Iq = 6mA, Ios = 4mA @
Vos = 2.5V, ΘLim = 135°C
Rthj-amb = 100°C/W (Minidip); 90°C/W (SO20);
70°C/W (SIP9)
It follows:
Ioutx = 0.625mA, RDSONx = 1.006Ω, Pq = 180mW,
Pos = 110mW
From equation 4, we can find:
Tambx = 66.7°C (Minidip);
73.5°C (SO20);
87.2°C (SIP9).
Therefore, the IPS TDE1897/1898, although
guaranteed to operate up to 85°C ambient temperature, if used in the worst conditions, can meet
some limitations.
SIP9 package, which has the lowest Rthj-amb, can
work at maximum operative current over the entire ambient temperature range in the worst conditions too. For other packages, it is necessary to
consider some reductions.
With the aid of equation 3, we can draw a derating curve giving the maximum current allowable
versus ambient temperature. The diagrams, computed using parameter values above given, are
depicted in figg. 6 to 8.
If an increase of the operating area is needed,
heat dissipation must be improved (Rth reduced)
e.g. by means of air cooling.
Figure 5: Application Circuit.
DC BUS 24V +/-25%
+Vs
+IN
-IN
µP POLLING
+
CONTROL
LOGIC
-
OUTPUT
D1
Ios
D2
GND
LOAD
OUTPUT STATUS
D93IN014
7/12
TDE1897R - TDE1898R
Figure 6: Max. Output Current vs. Ambient
Temperature (Minidip Package,
Rth j-amb = 100°C/W)
Figure 7: Max. Output Current vs. Ambient
Temperature (SO20 Package,
Rth j-amb = 90°C/W)
D93IN016
D93IN015
(mA)
(mA)
600
600
500
500
400
400
300
300
200
200
100
100
0
0
0
20
40
60
80
100
(°C)
Figure 8: Max. Output Current vs. Ambient
Temperature (SIP9 Package,
Rth j-amb = 70°C/W)
D93IN017
(mA)
600
500
400
300
200
100
0
0
8/12
20
40
60
80
100
(˚C)
0
20
40
60
80
100
(˚C)
TDE1897R - TDE1898R
mm
inch
DIM.
MIN.
A
TYP.
MAX.
MIN.
3.32
TYP.
MAX.
0.131
a1
0.51
B
1.15
1.65
0.045
0.065
b
0.356
0.55
0.014
0.022
b1
0.204
0.304
0.008
0.012
0.020
D
E
10.92
7.95
9.75
0.430
0.313
0.384
e
2.54
0.100
e3
7.62
0.300
e4
7.62
0.300
F
6.6
0.260
I
5.08
0.200
L
Z
3.18
OUTLINE AND
MECHANICAL DATA
3.81
1.52
0.125
0.150
Minidip
0.060
9/12
TDE1897R - TDE1898R
mm
DIM.
MIN.
TYP.
A
inch
MAX.
MIN.
TYP.
7.1
a1
2.7
3
B
0.280
0.106
0.118
23
B3
0.90
24.8
b1
0.976
0.5
b3
0.85
0.020
1.6
0.033
0.063
C
3.3
0.130
c1
0.43
0.017
c2
1.32
D
0.052
21.2
0.835
d1
14.5
0.571
e
2.54
0.100
e3
20.32
L
0.800
3.1
0.122
L1
3
0.118
L2
17.6
0.693
L3
0.25
L4
OUTLINE AND
MECHANICAL DATA
MAX.
17.4
17.85
M
3.2
N
1
0.010
0.685
0,702
0.126
SIP9
0.039
P
0.15
0.006
C
D
L1
L3
c2
N
P
1
9
L
a1
L2
L4
A
d1
M
b1
b3
e
1
c
e3
B
B3
10/12
SIP9
TDE1897R - TDE1898R
mm
inch
OUTLINE AND
MECHANICAL DATA
DIM.
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.35
2.65
0.093
0.104
A1
0.1
0.3
0.004
0.012
B
0.33
0.51
0.013
0.020
C
0.23
0.32
0.009
0.013
D
12.6
13
0.496
0.512
E
7.4
7.6
0.291
0.299
e
1.27
0.050
H
10
10.65
0.394
0.419
h
0.25
0.75
0.010
0.030
L
0.4
1.27
0.016
0.050
SO20
K
0˚ (min.)8˚ (max.)
L
h x 45˚
A
B
e
A1
K
C
H
D
20
11
E
1
0
1
SO20MEC
11/12
TDE1897R - TDE1898R
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2003 STMicroelectronics - All rights reserved
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