STMICROELECTRONICS TIP102_03

TIP102
TIP107
®
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■
■
■
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
■ AUDIO POWER AMPLIFIER
■ GENERAL POWER SWITCHING
■ DC-AC CONVERTER
■ EASY DRIVER FOR LOW VOLTAGE
DC MOTOR
■
3
1
2
TO-220
DESCRIPTION
The TIP102 is a silicon Epitaxial-Base NPN
power transistor in monolithic Darlington
configuration mounted in TO-220 plastic
package. It is intented for use in power linear and
switching applications.
The complementary PNP type is TIP107.
INTERNAL SCHEMATIC DIAGRAM
R2 Typ. = 150 Ω
R1 Typ. = 5 KΩ
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
NPN
TIP102
PNP
TIP107
Unit
V CBO
Collector-Base Voltage (I E = 0)
100
V
V CEO
Collector-Emitter Voltage (I B = 0)
100
V
V EBO
Emitter-Base Voltage (I C = 0)
5
V
Collector Current
8
A
15
A
IC
I CM
IB
P tot
T stg
Tj
Collector Peak Current
Base Current
Total Dissipation at T case ≤ 25 o C
o
T amb ≤ 25 C
Storage Temperature
Max. Operating Junction Temperature
1
A
80
2
W
W
-65 to 150
o
C
150
o
C
* For PNP types voltage and current values are negative.
April 2003
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TIP102 / TIP107
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
1.56
62.5
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Max.
Unit
I CEO
Collector Cut-off
Current (I B = 0)
Parameter
V CE = 50 V
50
µA
I CBO
Collector Cut-off
Current (I E = 0)
V CB = 100 V
50
µA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
8
mA
VCEO(sus) * Collector-Emitter
Sustaining Voltage
(I B = 0)
V CE(sat) *
Test Conditions
I C = 30 mA
Typ.
100
V
Collector-Emitter
Saturation Voltage
IC = 3 A
IC = 8 A
I B = 6 mA
I B = 80 mA
2
2.5
V
V
V BE *
Base-Emitter Voltage
IC = 8 A
V CE = 4 V
2.8
V
h FE *
DC Current Gain
IC = 3 A
IC = 8 A
V CE = 4 V
V CE = 4 V
VF *
Forward Voltage of
Commutation Diode
(I B = 0)
I F = - I C = 10 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
Safe Operating Area
2/4
Min.
1000
200
20000
2.8
V
TIP102 / TIP107
TO-220 MECHANICAL DATA
DIM.
mm
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.052
D
2.40
2.72
0.094
0.107
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.202
G1
2.40
2.70
0.094
0.106
H2
10.00
10.40
0.394
0.409
L2
16.40
0.645
L4
13.00
14.00
0.511
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.20
6.60
0.244
0.260
L9
3.50
3.93
0.137
M
DIA.
2.60
3.75
0.551
0.154
0.102
3.85
0.147
0.151
P011CI
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TIP102 / TIP107
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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