TYN606 TYN1006 ® 6A SCRS STANDARD Table 1: Main Features A Symbol Value Unit IT(RMS) 6 A VDRM/VRRM 600 and 1000 V IGT 15 mA G K A DESCRIPTION The TYN606 and TYN1006 family of Silicon Controlled Rectifiers are high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supply up to 400Hz on resistive or inductive load. K A G TO-220AB Table 2: Order Codes Part Numbers Marking TYN606RG TYN606 TYN1006RG TYN1006 Table 3: Absolute Ratings (limiting values) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180° conduction angle) Tc = 110°C 6 A IT(AV) Average on-state current (180° conduction angle) Tc = 110°C 3.8 A ITSM Non repetitive surge peak on-state current tp = 10 ms I²t Value for fusing tp = 10 ms I²t dI/dt Critical rate of rise of on-state current IG = 100 mA , dIG/dt = 0.1 A/µs IGM Peak gate current PG(AV) Maximum gate power VDRM VRRM Repetitive peak off-state voltage TL tp = 20 µs Average gate power dissipation PGM Tstg Tj tp = 8.3 ms tp = 20 µs TYN606 TYN1006 Tj = 25°C A 24.5 A2S Tj = 125°C 50 A/µs Tj = 125°C 4 A Tj = 125°C 1 W Tj = 125°C 10 W Tj = 125°C Maximum lead temperature for soldering during 10s at 2mm from case REV. 2 70 Tj = 25°C Storage junction temperature range Operating junction temperature range February 2006 73 600 1000 V - 40 to + 150 - 40 to + 125 °C 260 °C 1/6 TYN606 / TYN1006 Tables 4: Electrical Characteristics (Tj = 25°C, unless otherwise specified) Symbol Test Conditions IGT RL = 33 Ω VD = 12 V (D.C.) VGT VD = VDRM VGD RL = 3.3 kΩ Tj = 110°C Value Unit MAX. 15 mA MAX. 1.5 V MIN. 0.2 V tgt VD = VDRM IG = 40 mA dIG/dt = 0.5 A/µs TYP. 2 µs IH IT = 100 mA MAX. 30 mA IL IG = 1.2 x IGT TYP. 50 mA MIN. 200 V/µs MAX. 1.6 V 10 µA 2 mA 70 µs Gate open dV/dt Linear slope up to: VD = 67 % VDRM Gate open VTM ITM = 12 A IDRM IRRM VDRM = VRRM Tj = 110°C tp = 380 µs Tj = 25°C MAX. Tj = 110°C VD = 67 % VDRM ITM = 12 A VR = 25 V Tj = 110°C dITM/dt = 30 A/µs dVD/dt = 50 V/µs tq TYP. Table 5: Thermal Resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (D.C.) 2.5 °C/W Rth(j-a) Junction to ambient 60 °C/W Figure 1: Maximum average power dissipation versus average on-state current Figure 2: Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tlead) P(W) P(W) 7 Tlead(°C) 7 α = 180° 6 α = 120° 5 α = 60° 4 Rth = 5°C/W Rth = 0°C/W 110 5 α = 90° 115 4 α = 30° 3 Rth = 10°C/W 6 DC α = 180° Rth = 15°C/W 3 2 120 2 360° 1 1 IT(AV)(A) 0.0 2/6 0.5 1.0 1.5 2.0 2.5 Tamb(°C) α 0 3.0 3.5 4.0 125 0 4.5 5.0 0 20 40 60 80 100 120 140 TYN606 / TYN1006 Figure 3: Average on-state current versus case temperature Figure 4: Relative variation of impedance versus pulse duration IT(AV)(A) thermal K=[Zth(j-c)/Rth(j-c)] 7 1 D.C. Zth(j-c) 6 5 α = 180° 4 Zth(j-a) 0.1 3 2 1 tp(s) Tcase(°C) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Figure 5: Relative variation of gate trigger current versus junction temperature 0.01 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Figure 6: Surge peak on-state current versus number of cycles IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] ITSM(A) 2.5 80 70 2 tp=10ms 60 One cycle 50 1.5 Tj initial=25°C IGT 1 40 IH & IL 30 20 0.5 10 Tj(°C) Number of cycles 0 0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 Figure 7: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of I²t 1 10 100 1000 Figure 8: On-state characteristics (maximum values) ITM(A) ITSM(A), I2t (A2s) 100 Tj initial = 25°C Tj=max ITSM 100 10 Tj=25°C I2t Tj max.: Vt0=1.0V Rd=46mΩ VTM(V) tp(ms) 1 10 1 2 5 10 1 2 3 4 5 3/6 TYN606 / TYN1006 Figure 9: Ordering Information Scheme TYN 6 06 RG Standard SCR series Voltage 6 = 600V 10 = 100V Current 06 = 6A Packing mode RG = Tube Table 6: Product Selector Voltage (xx) 600 V 1000 V X X Part Numbers TYN606RG TYN1006RG Sensitivity Package 15 mA 15 mA TO-220AB TO-220AB Figure 10: TO-220AB Package Mechanical Data REF. C B ØI b2 L F A I4 l3 c2 a1 l2 a2 M b1 e c1 A a1 a2 B b1 b2 C c1 c2 e F ØI I4 L l2 l3 M DIMENSIONS Millimeters Inches Min. Typ. Max. Min. Typ. 15.20 15.90 0.598 3.75 0.147 13.00 14.00 0.511 10.00 10.40 0.393 0.61 0.88 0.024 1.23 1.32 0.048 4.40 4.60 0.173 0.49 0.70 0.019 2.40 2.72 0.094 2.40 2.70 0.094 6.20 6.60 0.244 3.75 3.85 0.147 15.80 16.40 16.80 0.622 0.646 2.65 2.95 0.104 1.14 1.70 0.044 1.14 1.70 0.044 2.60 0.102 Max. 0.625 0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151 0.661 0.116 0.066 0.066 In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 4/6 TYN606 / TYN1006 Table 7: Ordering Information Ordering type Marking TYN606RG TYN606 TYN1006RG TYN1006 Package Weight Base qty Delivery mode TO-220AB 2.3 g 50 Tube Table 8: Revision History Date Sep-2001 Revision 1A 13-Feb-2006 2 Description of Changes First issue. TO-220AB delivery mode changed from bulk to tube. ECOPACK statement added. 5/6 TYN606 / TYN1006 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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