STMICROELECTRONICS VNQ5050AKTR-E

VNQ5050AK-E
Quad channel high side driver with analog current sense
for automotive applications
Features
Max supply voltage
VCC
41V
Operating voltage range
VCC 4.5 to 36V
Max on-state resistance (per ch.)
RON
50 mΩ
Current limitation (typ)
ILIMH
19 A
Off state supply current
IS
2 µA(1)
PowerSSO-24
Application
1. Typical value with all loads connected.
■
All types of resistive, inductive and capacitive
loads.
■
■
Suitable as LED driver.
General features:
– Inrush current active management by
power limitation
– Very low stand-by current
– 3.0V CMOS compatible input
– Optimized electromagnetic emission
– Very low electromagnetic susceptibility
– In compliance with the 2002/95/EC
European directive
■ Diagnostic functions:
– Proportional load current sense
– High current sense precision for wide
current range
– Current sense disable
– Thermal shutdown indication
– Very low current sense leakage
■ Protection:
– Undervoltage shut-down
– Overvoltage clamp
– Load current limitation
– Self limiting of fast thermal transients
– Protection against loss of ground and loss of VCC
– Thermal shut down
– Reverse battery protection (see Figure 25)
– Electrostatic discharge protection
Table 1.
Description
The VNQ5050AK-E is a monolithic device made
using STMicroelectronics VIPower M0-5
technology. It is intended for driving resistive or
inductive loads with one side connected to
ground. Active VCC pin voltage clamp protects the
device against low energy spikes (see ISO7637
transient compatibility table).
This device integrates an analog current sense
which delivers a current proportional to the load
current (according to a known ratio) when
CS_DIS is driven low or left open. When CS_DIS
is driven high, the CURRENT SENSE pin is in a
high impedance condition.
Output current limitation protects the device in
overload condition. In case of long overload
duration, the device limits the dissipated power to
a safe level up to thermal shut-down intervention.
Thermal shut-down with automatic restart allows
the device to recover normal operation as soon as
the fault condition disappears.
Device summary
Order codes
Package
PowerSSO-24
December 2007
Tube
Tape and Reel
VNQ5050AK-E
VNQ5050AKTR-E
Rev 6
1/31
www.st.com
31
Contents
VNQ5050AK-E
Contents
1
Block diagram and pin configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
2.1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
2.3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
2.4
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Application information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.1
4
6
2/31
3.1.1
Solution 1: resistor in the ground line (RGND only) . . . . . . . . . . . . . . . . 20
3.1.2
Solution 2: a diode (DGND) in the ground line. . . . . . . . . . . . . . . . . . . . 21
3.2
Load dump protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.3
MCU I/Os protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
3.4
Maximum demagnetization energy (VCC = 13.5V) . . . . . . . . . . . . . . . . . 23
Package and PC board thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
4.1
5
GND protection network against reverse battery . . . . . . . . . . . . . . . . . . . 20
PowerSSO-24 thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
5.1
ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
5.2
PowerSSO-24™ mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
5.3
Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
VNQ5050AK-E
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
Table 12.
Table 13.
Table 14.
Table 15.
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pin functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Suggested connections for unused and n.c. pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Power section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Switching (VCC=13V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Current sense (8V<VCC<16V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Logic input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Electrical transient requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Thermal parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
PowerSSO-24™ mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
3/31
List of figures
VNQ5050AK-E
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
Figure 33.
Figure 34.
4/31
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Current sense delay characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Delay response time between rising edge of ouput current and rising edge of current sense
(CS enabled) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Switching characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
IOUT/ISENSE Vs. IOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Maximum current sense ratio drift vs load current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Output voltage drop limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Off state output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
High level input current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Input clamp voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Input low level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Input high level . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Input hysteresis voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
On state resistance vs. Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
On state resistance vs. VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Undervoltage shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Turn-On voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
ILIMH vs. Tcase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Turn-Off voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
CS_DIS high level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
CS_DIS clamp voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
CS_DIS low level voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Application schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Maximum turn off current versus inductance (for each channel) . . . . . . . . . . . . . . . . . . . . 23
PowerSSO-24 PC board. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Rthj-amb vs. PCB copper area in open box free air condition (one channel ON). . . . . . . . 24
PowerSSO-24 thermal impedance junction ambient single pulse (one channel on) . . . . . 25
Thermal fitting model of a double channel HSD in PowerSSO-24 . . . . . . . . . . . . . . . . . . . 25
PowerSSO-24™ package dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
PowerSSO-24 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
PowerSSO-24 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
VNQ5050AK-E
1
Block diagram and pin configuration
Block diagram and pin configuration
Figure 1.
Block diagram
VCC
UNDERVOLTAGE
VCC
CLAMP
OUTPUT1
PwCLAMP 1
GND
DRIVER 1
ILIM 1
INPUT1
VDSLIM 1
LOGIC
INPUT2
INPUT2
VCC
Control & Protection
CURRENT Equivalent to
SENSE2 channel1
OVERTEMP. 1
INPUT3
INPUT3
IOUT1
K1
INPUT4
PwrLIM 1
CS_DIS
OUTPUT2
VCC
CURRENT
SENSE2
Control & Protection
to
CURRENT Equivalent
SENSE3 channel1
INPUT4
CURRENT
SENSE1
OUTPUT3
VCC
CURRENT
SENSE3
Control & Protection
to
CURRENT Equivalent
SENSE4 channel1
OUTPUT4
CURRENT
SENSE4
Table 2.
Pin functions
Name
VCC
OUTPUTn
GND
INPUTn
CURRENT
SENSEn
CS_DIS
Function
Battery connection
Power output
Ground connection. Must be reverse battery protected by an external
diode/resistor network
Voltage controlled input pin with hysteresis, CMOS compatible. Controls output
switch state
Analog current sense pin, delivers a current proportional to the load current
Active high CMOS compatible pin, to disable the current sense pin
5/31
Block diagram and pin configuration
Figure 2.
VNQ5050AK-E
Configuration diagram (top view)
VCC
OUTPUT1
GND
OUTPUT1
INPUT1
OUTPUT1
CURRENT SENSE1
OUTPUT2
INPUT2
OUTPUT2
CURRENT SENSE2
OUTPUT2
INPUT3
OUTPUT3
CURRENT SENSE3
OUTPUT3
INPUT4
OUTPUT3
CURRENT SENSE4
OUTPUT4
CS_DIS.
OUTPUT4
VCC
OUTPUT4
TAB = VCC
Table 3.
Suggested connections for unused and n.c. pins
Connection /
pin
Current sense
N.C.
Output
Input
CS_DIS
Floating
N.R.(1)
X
X
X
X
To ground
Through 1kΩ
resistor
X
N.R.
Through 10kΩ
resistor
Through 10kΩ
resistor
1. Not recommended.
6/31
VNQ5050AK-E
2
Electrical specifications
Electrical specifications
Figure 3.
Current and voltage conventions
IS
VCC
OUTPUTn
CS_DIS
VOUTn
ISENSEn
IINn
VINn
VCC
IOUTn
ICSD
VCSD
VFn
CURRENT
SENSEn
INPUTn
VSENSEn
GND
IGND
Note:
VFn = VOUTn - VCC during reverse battery condition.
2.1
Absolute maximum ratings
Stressing the device above the ratings listed in the “Absolute maximum ratings” tables may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to the conditions in this section for extended
periods may affect device reliability. Refer also to the STMicroelectronics SURE Program
and other relevant quality documents.
Table 4.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCC
DC supply voltage
41
V
-VCC
Reverse DC supply voltage
0.3
V
- IGND
DC reverse ground pin current
200
mA
Internally limited
A
20
A
DC input current
-1 to 10
mA
DC current sense disable input current
-1 to 10
mA
200
mA
VCC-41
+VCC
V
V
104
mJ
IOUT
DC output current
- IOUT
Reverse DC output current
IIN
ICSD
-ICSENSE DC Reverse CS pin current
VCSENSE Current sense maximum voltage
EMAX
Maximum switching energy (single pulse)
(L=3 mH; RL=0Ω; Vbat=13.5V; Tjstart=150ºC; IOUT = IlimL(Typ.) )
7/31
Electrical specifications
Table 4.
Absolute maximum ratings (continued)
Symbol
Value
Unit
VESD
Electrostatic discharge
(human body model: R=1.5KΩ; C=100pF)
- INPUT
- CURRENT SENSE
- CS_DIS
- OUTPUT
- VCC
4000
2000
4000
5000
5000
V
V
V
V
V
VESD
Charge device model (CDM-AEC-Q100-011)
750
V
Junction operating temperature
-40 to 150
°C
Storage temperature
-55 to 150
°C
Tj
Tstg
2.2
Parameter
Thermal data
Table 5.
Symbol
8/31
VNQ5050AK-E
Thermal data
Parameter
Max value
Unit
Rthj-case
Thermal resistance junction-case (With one channel ON)
2.8
°C/W
Rthj-amb
Thermal resistance junction-ambient
See Figure 29.
°C/W
VNQ5050AK-E
2.3
Electrical specifications
Electrical characteristics
Values specified in this section are for 8V<VCC<36V, -40°C< Tj <150°C, unless otherwise
stated.
Table 6.
Power section
Symbol
Parameter
VCC
Operating supply voltage
VUSD
VUSDhyst
RON
Vclamp
IS
IL(off)
VF
Test conditions
Min. Typ.
Max.
Unit
13
36
V
Undervoltage shutdown
3.5
4.5
V
Undervoltage shut-down
hysteresis
0.5
4.5
On state resistance
IOUT=2A; Tj=25°C
IOUT=2A; Tj=150°C
IOUT=2A; VCC=5V; Tj=25°C
Clamp voltage
IS=20 mA
Supply current
Off State; VCC=13V; Tj=25°C;
VIN=VOUT=VSENSE=VCSD=0V
On State; VCC=13V; VIN=5V;
IOUT=0A
Output - VCC diode
voltage(2)
50
100
65
mΩ
mΩ
mΩ
46
52
V
2(1)
8
5(1)
14
µA
mA
0.01
3
41
VIN=VOUT=0V; VCC=13V;
T
j=25°C
Off state output current(2)
VIN=VOUT=0V; VCC=13V;
Tj=125°C
0
V
0
µA
5
-IOUT=2A; Tj=150°C
0.7
V
Max.
Unit
1. PowerMOS leakage included.
2. For each channel.
Table 7.
Symbol
Switching (VCC=13V)
Parameter
Test conditions
Min.
Typ.
td(on)
Turn-on delay time
RL= 6.5Ω (see Figure 6.)
20
µs
td(off)
Turn-off delay time
RL= 6.5Ω (see Figure 6.)
45
µs
(dVOUT/dt)on Turn-on voltage slope
RL= 6.5Ω
See
Figure 19.
V/ µs
(dVOUT/dt)off Turn-off voltage slope
RL= 6.5Ω
See
Figure 21.
V/ µs
WON
Switching energy
losses during twon
RL= 6.5Ω (see Figure 6.)
0.15
mJ
WOFF
Switching energy
losses during twoff
RL= 6.5Ω (see Figure 6.)
0.3
mJ
9/31
Electrical specifications
Table 8.
Symbol
K0
K1
dK1/K1(1)
K2
dK2/K2
Current sense (8V<VCC<16V)
Parameter
(1)
dK3/K3(1)
ISENSE0
Test conditions
IOUT/ISENSE
IOUT= 0.05A;
VSENSE= 0.5 V; VCSD=0 V;
Tj= -40°C...150°C
IOUT/ISENSE
IOUT= 1A;
VSENSE= 0.5 V; VCSD=0 V;
Tj= -40°C...150°C
Tj= 25°C...150°C
IOUT= 1A; VSENSE= 0.5V;
Current sense ratio drift VCSD= 0V;
TJ= -40 °C to 150 °C
IOUT/ISENSE
K3
10/31
VNQ5050AK-E
IOUT= 2A;
VSENSE= 4 V; VCSD= 0 V;
Tj= -40°C...150°C
Tj= 25°C...150°C
IOUT= 2A; VSENSE= 4 V;
Current sense ratio drift VCSD= 0V;
TJ= -40 °C to 150 °C
IOUT/ISENSE
IOUT= 4A;
VSENSE= 4 V; VCSD= 0 V;
Tj= -40°C...150°C
Tj= 25°C...150°C
IOUT= 4A; VSENSE= 4 V;
Current sense ratio drift VCSD= 0V;
TJ= -40 °C to 150 °C
Analog sense leakage
current
Min.
Typ.
Max.
Unit
1340 2420 3460
1370 1860 2510
1510 1860 2210
-10
10
%
1590 1760 2140
1600 1760 1930
-8
8
%
1650 1740 1950
1650 1740 1830
-5
5
%
IOUT= 0A; VSENSE= 0V;
VCSD= 5V; VIN= 0V;
Tj= -40°C...150°C
0
1
µA
VCSD= 0V; VIN= 5V;
Tj= -40°C...150°C
0
2
µA
IOUT= 2A; VSENSE= 0V;
VCSD= 5V; VIN= 5V;
Tj= -40°C...150°C
0
1
µA
20
mA
IOL
Openload ON state
current detection
threshold
VIN = 0V, 8V<VCC<18V
ISENSE= 5 µA
4
VSENSE
Max analog sense
output voltage
IOUT= 4A; VCSD= 0V
5
VSENSEH
Analog sense output
voltage in
overtemperature
condition
VCC= 13V; RSENSE= 10KΩ
V
9
V
VNQ5050AK-E
Electrical specifications
Table 8.
Current sense (8V<VCC<16V) (continued)
Symbol
Parameter
Test conditions
Analog sense output
current in
overtemperature
condition
ISENSEH
Min.
Typ.
Max.
Unit
VCC= 13V; VSENSE= 5V
8
Delay response time
tDSENSE1H from falling edge of
CS_DIS pin
VSENSE<4V, 0.5A<Iout<4A
ISENSE= 90% of ISENSE max
(see Figure 4.)
50
100
µs
Delay response time
from rising edge of
CS_DIS pin
VSENSE<4V, 0.5A<Iout<4A
ISENSE=10% of ISENSE max
(see Figure 4.)
5
20
µs
Delay response time
tDSENSE2H from rising edge of
INPUT pin
VSENSE<4V, 0.5A<Iout<4A
ISENSE=90% of ISENSE max
(see Figure 4.)
80
250
µs
Delay response time
between rising edge of
∆tDSENSE2H output current and
rising edge of current
sense
VSENSE < 4V,
ISENSE = 90% of ISENSEMAX,
IOUT = 90% of IOUTMAX
IOUTMAX=2A (see Figure 5)
65
µs
250
µs
tDSENSE1L
tDSENSE2L
Delay response time
from falling edge of
INPUT pin
VSENSE<4V, 0.5A<Iout<4A
ISENSE=10% of ISENSE max
(see Figure 4.)
100
mA
1. Parameter guaranteed by design; it is not tested.
Table 9.
Protection(1)
Symbol
Parameter
Test conditions
VCC=13V
5V<VCC<36V
IlimH
DC short circuit
current
IlimL
Short circuit current
VCC=13V; TR<Tj<TTSD
during thermal cycling
TTSD
Shutdown
temperature
TR
Reset temperature
TRS
Thermal reset of
STATUS
THYST
VDEMAG
VON
Min.
Typ.
Max.
Unit
13.5
19
26.5
26.5
A
A
7
150
175
TRS + 1
TRS + 5
A
200
°C
135
Thermal hysteresis
(TTSD-TR)
°C
7
Turn-Off output
voltage clamp
IOUT=2A; VIN=0; L=6mH
Output voltage drop
limitation
IOUT=0.1A; Tj=-40°C...150°C
(see Figure 9.)
VCC-41
°C
VCC-46
°C
VCC-52
25
V
mV
1. To ensure long term reliability under heavy overload or short circuit conditions, protection and related
diagnostic signals must be used together with a proper software strategy. If the device is subjected to
abnormal conditions, this software must limit the duration and number of activation cycles.
11/31
Electrical specifications
Table 10.
VNQ5050AK-E
Logic input
Symbol
Parameter
VIL
Input low level voltage
IIL
Low level input current
VIH
Input high level voltage
IIH
High level input current
VI(hyst)
Input hysteresis voltage
VICL
Test conditions
VIN= 0.9V
CS_DIS low level voltage
ICSDL
Low level CS_DIS current
VCSDH
CS_DIS high level voltage
ICSDH
High level CS_DIS current
Figure 4.
CS_DIS clamp voltage
Max.
Unit
0.9
V
1
µA
2.1
V
10
0.25
IIN= 1mA
IIN= -1mA
VCSD=0.9V
5.5
7
V
V
0.9
V
-0.7
1
µA
2.1
V
10
0.25
ICSD= 1mA
ICSD= -1mA
5.5
7
-0.7
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
12/31
tDSENSE1L
tDSENSE1H
µA
V
Current sense delay characteristics
tDSENSE2H
µA
V
VCSD=2.1V
VCSD(hyst) CS_DIS hysteresis voltage
VCSCL
Typ.
VIN= 2.1V
Input clamp voltage
VCSDL
Min.
tDSENSE2L
V
V
VNQ5050AK-E
Electrical specifications
Figure 5.
Delay response time between rising edge of ouput current and rising
edge of current sense (CS enabled)
VIN
∆tDSENSE2H
t
IOUT
IOUTMAX
90% IOUTMAX
t
ISENSE
ISENSEMAX
90% ISENSEMAX
t
Figure 6.
Switching characteristics
VOUT
tWon
tWoff
90%
80%
dVOUT/dt(off)
dVOUT/dt(on)
tr
10%
tf
t
INPUT
td(on)
td(off)
t
13/31
Electrical specifications
Figure 7.
VNQ5050AK-E
IOUT/ISENSE Vs. IOUT
Iout / Isense
2600
max Tj = -40 °C to 150 °C
2400
2200
2000
max Tj = 25 °C to 150 °C
1800
typical value
min Tj = 25 °C to 150 °C
1600
1400
min Tj = -40 °C to 150 °C
1200
1000
1
1,5
2
2,5
3
3,5
4
IOUT (A)
Figure 8.
Maximum current sense ratio drift vs load current
dk/k(%)
15
10
5
0
-5
-10
-15
1
1,5
2
2,5
IOUT (A)
Note:
14/31
Parameter guaranteed by design; it is not tested.
3
3,5
4
4,5
5
VNQ5050AK-E
Electrical specifications
Table 11.
Truth table
Input
Output
Sense (VCSD=0V)(1)
Normal operation
L
H
L
H
0
Nominal
Overtemperature
L
H
L
L
0
VSENSEH
Undervoltage
L
H
L
L
0
0
Short circuit to GND
(Rsc ≤10 mΩ)
L
H
H
L
L
L
0
0 if Tj < TTSD
VSENSEH if Tj > TTSD
Short circuit to VCC
L
H
H
H
0
< Nominal
Negative output voltage
clamp
L
L
0
Conditions
1. If the VCSD is high, the SENSE output is at a high impedance, its potential depends on leakage currents
and external circuit.
Figure 9.
Output voltage drop limitation
Vcc-Vout
Tj=150oC
Tj=25oC
Tj=-40oC
Von
Von/Ron(T)
Iout
15/31
Electrical specifications
Table 12.
VNQ5050AK-E
Electrical transient requirements
ISO 7637-2:
2004(E)
Test levels
Number of
pulses or
test times
Burst cycle/pulse
repetition time
Delays and
Impedance
Test pulse
III
IV
1
-75 V
-100 V
5000
pulses
0.5 s
5s
2 ms, 10 Ω
2a
+37 V
+50 V
5000
pulses
0.2 s
5s
50 µs, 2 Ω
3a
-100 V
-150 V
1h
90 ms
100 ms
0.1 µs, 50 Ω
3b
+75 V
+100 V
1h
90 ms
100 ms
0.1 µs, 50 Ω
4
-6 V
-7 V
1 pulse
100 ms, 0.01
Ω
5b(2)
+65 V
+87 V
1 pulse
400 ms, 2 Ω
Test level results(1)
ISO 7637-2:
2004(E)
test pulse
III
IV
1
C
C
2a
C
C
3a
C
C
3b
C
C
4
C
C
5b (2)
C
C
1. The above test levels must be considered referred to VCC = 13.5V except for pulse 5b.
2. Valid in case of external load dump clamp: 40V maximum referred to ground.
16/31
Class
Contents
C
All functions of the device are performed as designed after exposure to disturbance.
E
One or more functions of the device are not performed as designed after exposure
to disturbance and cannot be returned to proper operation without replacing the
device.
VNQ5050AK-E
2.4
Electrical specifications
Electrical characteristics curves
Figure 10. Off state output current
Figure 11. High level input current
Iloff (uA)
Iih (uA)
0.09
5
0.08
4.5
Off state
Vcc=13V
Vin=Vout=0V
0.07
Vin=2.1V
4
3.5
0.06
3
0.05
2.5
0.04
2
0.03
1.5
0.02
1
0.01
0.5
0
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
Tc (°C )
75
100
125
150
175
Tc (°C )
Figure 12. Input clamp voltage
Figure 13. Input low level
Vil (V)
Vicl (V)
7
2
6.8
1.8
Iin=1mA
6.6
1.6
6.4
1.4
6.2
1.2
6
1
5.8
0.8
5.6
0.6
5.4
0.4
5.2
0.2
0
5
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
Tc (°C )
Tc (°C )
Figure 14. Input high level
Figure 15. Input hysteresis voltage
Vih (V)
Vhyst (V)
4
1
3.5
0.9
0.8
3
0.7
2.5
0.6
2
0.5
1.5
0.4
0.3
1
0.2
0.5
0.1
0
0
-50
-25
0
25
50
75
Tc (°C )
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
Tc (°C )
17/31
Electrical specifications
VNQ5050AK-E
Figure 16. On state resistance vs. Tcase
Figure 17. On state resistance vs. VCC
Ron (mOhm)
Ron (mOhm)
100
100
90
90
Iout=2A
Vcc=13V
80
80
70
70
60
60
50
50
40
40
Tc=150°C
Tc=125°C
30
30
20
20
10
10
0
Tc=25°C
Tc=-40°C
0
-50
-25
0
25
50
75
100
125
150
175
0
5
10
15
Tc (°C )
20
25
30
35
40
Vcc (V)
Figure 18. Undervoltage shutdown
Figure 19. Turn- On voltage slope
Vusd (V)
(dVout/dt)on (V/ms)
16
1000
900
14
Vcc=13V
Rl=6.5Ohm
800
12
700
10
600
500
8
400
6
300
4
200
2
100
0
0
-50
-25
0
25
50
75
100
125
150
-50
175
-25
0
25
50
75
100
125
150
175
Tc (°C )
Tc (°C )
Figure 20. ILIMH vs. Tcase
Figure 21. Turn- Off voltage slope
Ilimh (A)
(dVout/dt)off (V/ms)
1000
25
900
22.5
Vcc=13V
Vcc=13V
Rl=6.5Ohm
800
20
700
17.5
600
500
15
400
12.5
300
10
200
7.5
100
0
5
-50
-25
0
25
50
75
Tc (°C )
18/31
100
125
150
175
-50
-25
0
25
50
75
Tc (°C )
100
125
150
175
VNQ5050AK-E
Electrical specifications
Figure 22. CS_DIS high level voltage
Vcsdh (V)
Figure 23. CS_DIS clamp voltage
Vcsdcl (V)
4
8
3.5
7.5
3
7
2.5
6.5
2
6
1.5
5.5
1
5
0.5
4.5
Icsd=1mA
4
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
Tc (°C )
Tc (°C )
Figure 24. CS_DIS low level voltage
Vcsdl (V)
4
3.5
3
2.5
2
1.5
1
0.5
0
-50
-25
0
25
50
75
100
125
150
175
Tc (°C )
19/31
Application information
3
VNQ5050AK-E
Application information
Figure 25. Application schematic
+5V
VCC
Rprot
CS_DIS
Dld
µC
Rprot
IINPUT
OUTPUT
Rprot
CURRENT SENSE
GND
RSENSE
Cext
VGND
RGND
DGND
Note:
Channel 2, 3, 4 have the same internal circuit as channel 1.
3.1
GND protection network against reverse battery
3.1.1
Solution 1: resistor in the ground line (RGND only)
This can be used with any type of load.
The following is an indication on how to dimension the RGND resistor.
1.
RGND ≤600mV / (IS(on)max).
2.
RGND ≥ (−VCC) / (-IGND)
where -IGND is the DC reverse ground pin current and can be found in the absolute
maximum rating section of the device datasheet.
Power Dissipation in RGND (when VCC<0: during reverse battery situations) is:
PD= (-VCC)2/RGND
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the
maximum on-state currents of the different devices.
Please note that if the microprocessor ground is not shared by the device ground then the
RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output
values. This shift will vary depending on how many devices are ON in the case of several
high side drivers sharing the same RGND.
If the calculated power dissipation leads to a large resistor or several devices have to share
the same resistor then ST suggests to utilize Solution 2 (see below).
20/31
VNQ5050AK-E
3.1.2
Application information
Solution 2: a diode (DGND) in the ground line.
A resistor (RGND= 1kΩ) should be inserted in parallel to DGND if the device drives an
inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network will produce a shift (≈ 600mV) in the input
threshold and in the status output values if the microprocessor ground is not common to the
device ground. This shift will not vary if more than one HSD shares the same diode/resistor
network.
3.2
Load dump protection
Dld is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
VCC max DC rating. The same applies if the device is subject to transients on the VCC line
that are greater than the ones shown in the ISO T/R 7637/1 table.
3.3
MCU I/Os protection
If a ground protection network is used and negative transients are present on the VCC line,
the control pins will be pulled negative. ST suggests to insert a resistor (Rprot) in line to
prevent the µC I/Os pins to latch-up.
The value of these resistors is a compromise between the leakage current of µC and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of µC
I/Os.
-VCCpeak/Ilatchup ≤Rprot ≤(VOHµC-VIH-VGND) / IIHmax
Calculation example:
For VCCpeak= - 100V and Ilatchup ≥ 20mA; VOHµC ≥ 4.5V
5kΩ ≤Rprot ≤180kΩ.
Recommended values: Rprot = 10kΩ, CEXT= 10nF.
21/31
Application information
VNQ5050AK-E
Figure 26. Waveforms
NORMAL OPERATION
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
UNDERVOLTAGE
VUSDhyst
VCC
VUSD
INPUT
CS_DIS
LOAD CURRENT
SENSE CURRENT
SHORT TO VCC
INPUT
CS_DIS
LOAD VOLTAGE
LOAD CURRENT
SENSE CURRENT
<Nominal
<Nominal
OVERLOAD OPERATION
Tj
TR
TTSD
TRS
INPUT
CS_DIS
ILIMH
ILIML
LOAD CURRENT
VSENSEH
SENSE CURRENT
current power
limitation limitation
thermal cycling
SHORTED LOAD
22/31
NORMAL LOAD
VNQ5050AK-E
3.4
Application information
Maximum demagnetization energy (VCC = 13.5V)
Figure 27. Maximum turn Off current versus inductance (for each channel)
100
A
C
B
I (A)
10
1
0,1
1
L (mH)
10
100
A: Tjstart = 150°C single pulse
B: Tjstart = 100°C repetitive pulse
C: Tjstart = 125°C repetitive pulse
VIN, IL
Demagnetization
Demagnetization
Demagnetization
t
Note:
Values are generated with RL = 0Ω.
In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse
must not exceed the temperature specified above for curves A and B.
23/31
Package and PC board thermal data
VNQ5050AK-E
4
Package and PC board thermal data
4.1
PowerSSO-24 thermal data
Figure 28. PowerSSO-24 PC board
Note:
Layout condition of Rth and Zth measurements (PCB: Double layer, Thermal Vias, FR4
area= 77mm x 86mm, PCB thickness=1.6mm, Cu thickness=70µm (front and back side),
Copper areas: from minimum pad lay-out to 8cm2).
Figure 29. Rthj-amb vs. PCB copper area in open box free air condition (one channel ON)
RTHj_amb(°C/W)
55
50
45
40
35
30
0
2
4
6
PCB Cu heatsink area (cm^2)
24/31
8
10
VNQ5050AK-E
Package and PC board thermal data
Figure 30. PowerSSO-24 thermal impedance junction ambient single pulse (one channel on)
ZTH (°C/W)
1000
100
Footprint
2 cm2
8 cm2
10
1
0.1
0.0001
0.001
0.01
0.1
1
Time (s)
10
100
1000
Figure 31. Thermal fitting model of a double channel HSD in PowerSSO-24(a)
a. The fitting model is a semplified thermal tool and is valid for transient evolutions where the embedded
protections (power limitation or thermal cycling during thermal shutdown) are not triggered.
25/31
Package and PC board thermal data
VNQ5050AK-E
Equation 1: pulse calculation formula
Z THδ = R TH ⋅ δ + Z THtp ( 1 – δ)
where δ = t p ⁄ T
Table 13.
Thermal parameters
Area/island (cm2)
26/31
Footprint
2
8
R1=R7=R9=R11 (°C/W)
0.4
R2=R8=R10=R12 (°C/W)
2
R3 (°C/W)
6
R4 (°C/W)
7.7
R5 (°C/W)
9
9
8
R6 (°C/W)
28
17
10
C1=C7=C9=C11 (W.s/°C)
0.001
C2=C8=C10=C12 (W.s/°C)
0.0022
C3 (W.s/°C)
0.025
C4 (W.s/°C)
0.75
C5 (W.s/°C)
1
4
9
C6 (W.s/°C)
2.2
5
17
VNQ5050AK-E
Package and packing information
5
Package and packing information
5.1
ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. ECOPACK® packages are lead-free. The category of Second Level Interconnect
is marked on the package and on the inner box label, in compliance with JEDEC Standard
JESD97. The maximum ratings related to soldering conditions are also marked on the inner
box label.
ECOPACK is an ST trademark. ECOPACK specifications are available at www.st.com.
5.2
PowerSSO-24™ mechanical data
Figure 32. PowerSSO-24™ package dimensions
27/31
Package and packing information
Table 14.
VNQ5050AK-E
PowerSSO-24™ mechanical data
Millimeters
Symbol
Min.
Typ.
A
2.15
2.47
A2
2.15
2.40
a1
0
0.075
b
0.33
0.51
c
0.23
0.32
D
10.10
10.50
E
7.4
7.6
e
0.8
e3
8.8
G
0.1
G1
0.06
H
10.1
10.5
h
0.4
k
L
5º
0.55
N
28/31
Max.
0.85
10º
X
4.1
4.7
Y
6.5
7.1
VNQ5050AK-E
5.3
Package and packing information
Packing information
Figure 33. PowerSSO-24 tube shipment (no suffix)
C
Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
B
49
1225
532
3.5
13.8
0.6
All dimensions are in mm.
A
Figure 34. PowerSSO-24 tape and reel shipment (suffix “TR”)
Reel dimensions
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
1000
1000
330
1.5
13
20.2
24.4
100
30.4
Tape dimensions
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (± 0.1)
P
D (± 0.05)
D1 (min)
F (± 0.1)
K (max)
P1 (± 0.1)
24
4
12
1.55
1.5
11.5
2.85
2
End
All dimensions are in mm.
Start
Top
cover
tape
No components Components
500mm min
No components
500mm min
Empty components pockets
saled with cover tape.
User direction of feed
29/31
Revision history
6
VNQ5050AK-E
Revision history
Table 15.
30/31
Document revision history
Date
Revision
Changes
14-Sep-2004
1
Initial release.
12-Jan-2006
2
Major general update.
9-Mar-2007
3
Reformatted and restructured.
Added contents, lists of tables and list of figures.
Added Section 3.4: Maximum demagnetization energy
(VCC = 13.5V).
Added ECOPACK® packages information.
Added new disclaimer.
22-Aug-2007
4
Figure 14: Input high level and Figure 15: Input hysteresis voltage
corrected.
01-Oct-2007
5
Table 4: Absolute maximum ratings : changed EMAX value from 51 to
104 mJ.
Table 8: Current sense (8V<VCC<16V) : added dk1/k1, dk2/k2,
dk3/k3, ∆tDSENSE2H.
Added Figure 5: Delay response time between rising edge of ouput
current and rising edge of current sense (CS enabled).
Updated Figure 7: IOUT/ISENSE Vs. IOUT .
Added Figure 8: Maximum current sense ratio drift vs load current.
Table 12: Electrical transient requirements : added notes.
Figure 31: Thermal fitting model of a double channel HSD in
PowerSSO-24, added note.
04-Dec-2007
6
Updated Table 8: Current sense (8V<VCC<16V) :
– changed tDSENSE2H max value from 300 µs to 250µs.
– added IOL parameter.
VNQ5050AK-E
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT
RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING
APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY,
DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE
GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2007 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
31/31