STMICROELECTRONICS VNS3NV04D-E

VNS3NV04D-E
OMNIFET II
fully autoprotected Power MOSFET
Features
Max On-State resistance (per ch.)
RON
120mΩ
Current limitation (typ)
ILIMH
3.5A
VCLAMP
40V
Drain-Source clamp voltage
SO-8
■
Linear current limitation
■
Thermal shut down
■
Short circuit protection
■
Integrated clamp
■
Low current drawn from input pin
■
Diagnostic feedback through input pin
■
Esd protection
■
Direct access to the gate of the power mosfet
(analog driving)
■
Compatible with standard power mosfet
Description
The VNS3NV04D-E is a device formed by two
monolithic OMNIFET II chips housed in a
standard SO-8 package. The OMNIFET II are
designed in STMicroelectronics VIPower M0-3
Technology: they are intended for replacement of
standard Power MOSFETs from DC up to 50KHz
applications. Built in thermal shutdown, linear
current limitation and overvoltage clamp protects
the chip in harsh environments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
Table 1.
Device summary
Order codes
Package
SO-8
July 2007
Tube
Tape and Reel
VNS3NV04D-E
VNS3NV04DTR-E
Rev 2
1/21
www.st.com
21
Contents
VNS3NV04D-E
Contents
1
Block diagram and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
2/21
2.1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2
Thermal data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2.4
Electrical characteristics curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Protection features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.1
Overvoltage clamp protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.2
Linear current limiter circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.3
Overtemperature and short circuit protection . . . . . . . . . . . . . . . . . . . . . . 16
3.4
Status feedback . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Package and packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.1
ECOPACK® packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.2
SO-8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.3
SO-8 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
VNS3NV04D-E
List of tables
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Off . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
On . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Switching . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Source Drain diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Protections (-40°C < Tj < 150°C, unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . 9
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3/21
List of figures
VNS3NV04D-E
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Figure 17.
Figure 18.
Figure 19.
Figure 20.
Figure 21.
Figure 22.
Figure 23.
Figure 24.
Figure 25.
Figure 26.
Figure 27.
Figure 28.
Figure 29.
Figure 30.
Figure 31.
Figure 32.
4/21
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Configuration diagram (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Current and voltage conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Switching time test circuit for resistive load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Test circuit for diode recovery times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Unclamped inductive load test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Input charge test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Unclamped inductive waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Source-Drain diode forward characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Static Drain-Source On resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Derating curve . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Static Drain-Source On resistance vs. Input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Static Drain-Source On resistance Vs. Input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Transconductance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Static Drain-Source On resistance Vs. Id . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Transfer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn On current slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn On current slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Input voltage Vs. Input charge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn off Drain source voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Turn off Drain-Source voltage slope . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Capacitance variations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Switching time resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Switching time resistive load. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Output characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Normalized On resistance Vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Normalized Input threshold voltage Vs. temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Normalized current limit Vs. junction temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Step response current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
SO-8 package mechanical data & package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
SO-8 tube shipment (no suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
SO-8 tape and reel shipment (suffix “TR”) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
VNS3NV04D-E
1
Block diagram and pin description
Block diagram and pin description
Figure 1.
Block diagram
DRAIN2
DRAIN1
OVERVOLTAGE
CLAMP
OVERVOLTAGE
CLAMP
INPUT1
GATE
CONTROL
GATE
CONTROL
OVER
TEMPERATURE
LINEAR
CURRENT
LIMITER
LINEAR
CURRENT
LIMITER
SOURCE1
Figure 2.
INPUT2
OVER
TEMPERATURE
SOURCE2
Configuration diagram (top view)
SOURCE 1
1
8
DRAIN 2
SOURCE 2
INPUT 2
DRAIN 1
DRAIN 1
INPUT 1
4
5
DRAIN 2
5/21
Electrical specifications
2
VNS3NV04D-E
Electrical specifications
Figure 3.
Current and voltage conventions
RIN1
IIN1
ID1
INPUT 1
VIN1
IIN2
ID2
INPUT 2
VIN2
2.1
DRAIN 1
RIN2
SOURCE 1
VDS1
DRAIN 2
VDS1
SOURCE 2
Absolute maximum ratings
Stressing the device above the rating listed in the “Absolute maximum ratings” table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to Absolute maximum rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
program and other relevant quality document.
Table 2.
Absolute maximum ratings
Symbol
Value
Unit
VDSn
Drain-Source Voltage (VINn=0V)
Internally clamped
V
VINn
Input voltage
Internally clamped
V
IINn
Input current
+/-20
mA
220
Ω
Internally limited
A
RIN MINn
Minimum input series impedance
IDn
Drain current
IRn
Reverse DC output current
-5.5
A
VESD1
Electrostatic discharge (R=1.5KΩ, C=100pF)
4000
V
VESD2
Electrostatic discharge on output pins only (R=330Ω,
C=150pF)
16500
V
4
Ω
Ptot
Total dissipation at Tc=25°C
Tj
Operating junction temperature
Internally limited
°C
Tc
Case operating temperature
Internally limited
°C
-55 to 150
°C
Tstg
6/21
Parameter
Storage temperature
VNS3NV04D-E
2.2
Electrical specifications
Thermal data
Table 3.
Thermal data
Symbol
Parameter
Rthj-lead
Thermal resistance junction-lead (per channel)
Rthj-amb
Thermal resistance junction-ambient
Max value
Unit
30
°C/W
80(1)
°C/W
2
1. When mounted on a standard single-sided FR4 board with 50mm of Cu (at least 35 µm thick) connected
to all DRAIN pins of the relative channel
2.3
Electrical characteristics
Values specified in this section are for -40°C< Tj <150°C, unless otherwise stated.
Table 4.
Symbol
Off
Parameter
Test Conditions
Min
Typ
Max
Unit
45
55
V
VCLAMP
Drain-Source clamp
voltage
VIN=0V; ID=1.5A
40
VCLTH
Drain-Source clamp
threshold voltage
VIN=0V; ID=2mA
36
VINTH
Input threshold
voltage
VDS=VIN; ID=1mA
0.5
IISS
Supply current from
input pin
VDS=0V; VIN=5V
VINCL
Input-Source clamp
voltage
IIN=1mA
IIN=-1mA
IDSS
Zero input voltage
drain current
(VIN=0V)
VDS=13V; VIN=0V; Tj=25°C
VDS=25V; VIN=0V
Table 5.
Symbol
RDS(on)
6
-1.0
V
2.5
V
100
150
µA
6.8
8
-0.3
V
30
75
µA
Max
Unit
120
240
mΩ
On
Parameter
Static Drain-Source
On resistance
Test conditions
VIN=5V; ID=1.5A; Tj=25°C
VIN=5V; ID=1.5A
Min
Typ
7/21
Electrical specifications
VNS3NV04D-E
Electrical characteristics (continued) (Tj=25°C, unless otherwise specified)
Table 6.
Symbol
Dynamic
Parameter
Test conditions
Typ
Max
Unit
gfs (1)
Forward
transconductance
VDD=13V; ID=1.5A
5.0
S
COSS
Output capacitance
VDS=13V; f=1MHz; VIN=0V
150
pF
Table 7.
Symbol
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Switching
Parameter
Qi
Table 8.
Symbol
VSD(1)
Test conditions
Min
Turn-on delay time
Rise Time
Turn-off delay time
VDD=15V; ID=1.5A
Vgen=5V; Rgen=RIN MIN=220Ω
(see Figure 4)
Fall time
Turn-on delay time
Rise time
Turn-off delay time
VDD=15V; ID=1.5A
Vgen=5V; Rgen=2.2 KΩ
(see Figure 4)
Fall time
(dI/dt)on Turn-on current slope
Total input charge
Typ
Max
Unit
90
300
ns
250
750
ns
450
1350
ns
250
750
ns
0.45
1.35
µs
2.5
7.5
µs
3.3
10.0
µs
2.0
6.0
µs
VDD=15V; ID=1.5A
Vgen=5V; Rgen=RIN MIN=220Ω
4.7
A/µs
VDD=12V; ID=1.5A; VIN=5V
Igen=2.13mA (see Figure 7)
8.5
nC
Source Drain diode
Parameter
Forward On voltage
trr
Reverse recovery time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
Test Conditions
ISD=1.5A; VIN=0V
ISD=1.5A; dI/dt=12A/µs
VDD=30V; L=200µH
(see Figure 5)
1. Pulsed: Pulse duration = 300µs, duty cycle 1.5%
8/21
Min
Min
Typ
Max
Unit
0.8
V
107
ns
37
µC
0.7
A
VNS3NV04D-E
Electrical specifications
Table 9.
Protections (-40°C < Tj < 150°C, unless otherwise specified)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
3.5
5
7
A
Ilim
Drain current limit
VIN=5V; VDS=13V
tdlim
Step response current
limit
VIN=5V; VDS=13V
Tjsh
Overtemperature
shutdown
150
Tjrs
Overtemperature reset
135
Igf
Fault sink current
VIN=5V; VDS=13V; Tj=Tjsh
10
Eas
Single pulse
avalanche energy
Starting Tj=25°C; VDD=24V
VIN=5V Rgen=RIN MIN=220Ω;
L=24mH
(see Figure 6 and Figure 8)
100
Figure 4.
µs
10
175
200
°C
°C
15
20
mA
mJ
Switching time test circuit for resistive load
VD
Rgen
Vgen
ID
90%
tr
tf
10%
t
Vgen
td(on)
td(off)
t
9/21
Electrical specifications
Figure 5.
VNS3NV04D-E
Test circuit for diode recovery times
A
A
D
I
FAST
DIODE
OMNIFET
S
L=100uH
B
B
220Ω
D
Rgen
VDD
I
OMNIFET
Vgen
S
8.5 Ω
Figure 6.
Unclamped inductive load test circuits
RGEN
VIN
PW
10/21
VNS3NV04D-E
Figure 7.
Electrical specifications
Input charge test circuit
V IN
GEN
ND8003
Figure 8.
Unclamped inductive waveforms
11/21
Electrical specifications
2.4
VNS3NV04D-E
Electrical characteristics curves
Figure 9.
Source-Drain diode forward
characteristics
Vsd (mV)
Figure 10. Static Drain-Source On
resistance
Rds(on) (mohms)
1100
1000
1050
1000
Tj=-40ºC
900
Vin=0V
Vin=2.5V
800
950
700
900
600
850
500
800
400
750
300
700
200
650
100
600
Tj=25ºC
Tj=150ºC
0
0
1
2
3
4
5
6
7
8
9
10
11
12
0.05
0.1
0.15
0.2
0.25
Id (A)
0.3
0.35
0.4
0.45
0.5
0.55
Id(A)
Figure 11. Derating curve
Figure 12. Static Drain-Source On
resistance vs. Input voltage
Rds(on) (mohms)
300
275
250
Tj=150ºC
225
200
175
Id=3.5A
Id=1A
150
Tj=25ºC
125
100
Tj=-40ºC
75
Id=3.5A
Id=1A
50
Id=3.5A
Id=1A
25
0
3
3.5
4
4.5
5
5.5
6
6.5
Vin(V)
Figure 13. Static Drain-Source On
resistance Vs. Input voltage
Rds(on) (mohms)
Gfs (S)
250
11
225
10
Id=1.5A
200
Vds=13V
9
Tj=-40ºC
Tj=25ºC
8
175
Tj=150ºC
150
Tj=150ºC
7
6
125
5
100
4
75
50
Tj=25ºC
3
Tj=-40ºC
2
25
1
0
0
3
3.5
4
4.5
Vin(V)
12/21
Figure 14. Transconductance
5
5.5
6
6.5
0
0.5
1
1.5
2
2.5
3
Id (A)
3.5
4
4.5
5
5.5
VNS3NV04D-E
Electrical specifications
Figure 15. Static Drain-Source On
resistance Vs. Id
Figure 16. Transfer characteristics
Idon (A)
Rds(on) (mohms)
250
6
225
5.5
Vin=5V
200
Vds=13.5V
5
Tj=150ºC
4.5
175
4
150
Tj=150ºC
3.5
125
3
Tj=25ºC
100
Tj=-40ºC
2.5
2
75
1.5
50
Tj=- 40ºC
Tj=25ºC
1
25
0.5
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
1.5
2
2.5
3
Id (A)
3.5
4
4.5
5
5.5
6
Vin (V)
Figure 17. Turn On current slope
Figure 18. Turn On current slope
di/dt(A/us)
di/dt(A/usec)
5
1.75
4.5
Vin=5V
Vdd=15V
Id=1.5A
4
3.5
1.5
Vin=3.5V
Vdd=15V
Id=1.5A
1.25
3
1
2.5
0.75
2
1.5
0.5
1
0.25
0.5
0
0
0
250
500
0
750 1000 1250 1500 1750 2000 2250 2500
250
500
750 1000 1250 1500 1750 2000 2250 2500
Rg(ohm)
Rg(ohm)
Figure 19. Input voltage Vs. Input
charge
Figure 20. Turn off Drain source voltage
slope
Vin (V)
dv/dt(V/usec)
9
300
275
8
Vds=1V
Id=1.5A
7
Vin=5V
Vdd=15V
Id=1.5A
250
225
200
6
175
5
150
4
125
100
3
75
2
50
1
25
0
0
0
1
2
3
4
5
6
Qg (nC)
7
8
9
10
11
0
250
500
750
1000
1250
1500
1750
2000
2250
2500
Rg(ohm)
13/21
Electrical specifications
VNS3NV04D-E
Figure 21. Turn off Drain-Source voltage Figure 22. Capacitance variations
slope
dv/dt(V/usec)
C(pF)
300
350
275
Vin=3.5V
Vdd=15V
Id=1.5A
250
225
300
200
f=1MHz
Vin=0V
250
175
150
200
125
100
150
75
50
100
25
0
50
0
250
500
750
1000
1250
1500
2000
1750
2250
2500
0
5
10
15
20
25
30
35
Vds(V)
Rg(ohm)
Figure 23. Switching time resistive load Figure 24. Switching time resistive load
t(usec)
t(nsec)
4
900
800
3.5
3
tr
td(off)
Vdd=15V
Id=1.5A
Vin=5V
Vdd=15V
Id=1.5A
Rg=220ohm
700
tr
600
2.5
500
2
tf
400
1.5
td(off)
300
1
tf
200
td(on)
0.5
td(on)
100
0
0
0
250
500
750
1000
1250
1500
1750
2000
2250
3.25
2500
3.5
3.75
4
4.25
4.5
4.75
5
5.25
Vin(V)
Rg(ohm)
Figure 25. Output characteristics
Figure 26. Normalized On resistance Vs.
temperature
Id (A)
Rds(on) (mOhm)
5
4
Vin=5V
4.5
Vin=4V
4
3.5
3.5
Vin=5V
Id=1.5A
3
Vin=3V
3
2.5
2.5
2
2
1.5
1.5
1
1
0.5
0.5
0
0
1
2
3
4
5
Vds (V)
14/21
6
7
8
9
10
-50
-25
0
25
50
75
Tc )ºC)
100
125
150
175
VNS3NV04D-E
Electrical specifications
Figure 27. Normalized Input threshold
voltage Vs. temperature
Vinth (V)
Figure 28. Normalized current limit Vs.
junction temperature
Ilim (A)
10
2
1.8
9
Vds=Vin
Id=1mA
1.6
7
1.2
6
1
5
0.8
4
0.6
3
0.4
2
0.2
1
0
0
-50
-25
0
Vin=5V
Vds=13V
8
1.4
25
50
75
100
125
150
175
Tc (ºC)
-50
-25
0
25
50
75
100
125
150
175
Tc (ºC)
Figure 29. Step response current limit
Tdlim(usec)
13
12.5
Vin=5V
Rg=220ohm
12
11.5
11
10.5
10
9.5
9
8.5
8
7.5
5
7.5
10 12.5 15 17.5 20 22.5 25 27.5 30 32.5
Vdd(V)
15/21
Protection features
3
VNS3NV04D-E
Protection features
During normal operation, the INPUT pin is electrically connected to the gate of the internal
power MOSFET through a low impedance path.
The device then behaves like a standard power MOSFET and can be used as a switch from
DC up to 50KHz. The only difference from the user’s standpoint is that a small DC current
IISS (typ. 100µA) flows into the INPUT pin in order to supply the internal circuitry.
The device integrates:
3.1
Overvoltage clamp protection
Internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET
stage give this device unrivalled ruggedness and energy handling capability. This feature is
mainly important when driving inductive loads.
3.2
Linear current limiter circuit
Limits the drain current ID to Ilim whatever the INPUT pin voltages. When the current limiter
is active, the device operates in the linear region, so power dissipation may exceed the
capability of the heatsink. Both case and junction temperatures increase, and if this phase
lasts long enough, junction temperature may reach the overtemperature threshold Tjsh.
3.3
Overtemperature and short circuit protection
These are based on sensing the chip temperature and are not dependent on the input
voltage. The location of the sensing element on the chip in the power stage area ensures
fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the
range 150 to 190 °C, a typical value being 170 °C. The device is automatically restarted
when the chip temperature falls of about 15°C below shut-down temperature.
3.4
Status feedback
In the case of an overtemperature fault condition (Tj > Tjsh), the device tries to sink a
diagnostic current Igf through the INPUT pin in order to indicate fault condition. If driven from
a low impedance source, this current may be used in order to warn the control circuit of a
device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not
able to supply the current Igf, the INPUT pin will fall to 0V. This will not however affect the
device operation: no requirement is put on the current capability of the INPUT pin
driver except to be able to supply the normal operation drive current IISS.
Additional features of this device are ESD protection according to the Human Body model
and the ability to be driven from a TTL Logic circuit.
16/21
VNS3NV04D-E
Package and packing information
4
Package and packing information
4.1
ECOPACK® packages
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second-level interconnect. The category of
Second-Level Interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label.
ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
17/21
Package and packing information
4.2
VNS3NV04D-E
SO-8 Package mechanical data
Figure 30. SO-8 package mechanical data & package outline
mm
inch
DIM.
MIN.
TYP.
A
MAX.
MIN.
TYP.
MAX.
1.750
0.0689
0.250 0.0039
0.0098
A1
0.100
A2
1.250
0.0492
b
0.280
0.480 0.0110
0.0189
0.230 0.0067
0.0091
c
0.170
D (1)
4.800
4.900
5.000 0.1890 0.1929 0.1969
E
5.800
6.000
6.200 0.2283 0.2362 0.2441
3.900
4.000 0.1496 0.1535 0.1575
(2)
E1
3.800
e
1.270
h
0.250
L
0.400
L1
k
ccc
0.0500
0.500 0.0098
0.0197
1.270 0.0157
1.040
0˚
OUTLINE AND
MECHANICAL DATA
0.0500
0.0409
8˚
0.100
0˚
8˚
0.0039
Notes: 1. Dimensions D does not include mold flash,
protrusions or gate burrs.
Mold flash, potrusions or gate burrs shall not
exceed 0.15mm in total (both side).
2. Dimension “E1” does not include interlead flash
or protrusions. Interlead flash or protrusions shall
not exceed 0.25mm per side.
SO-8
0016023 D
18/21
VNS3NV04D-E
4.3
Package and packing information
SO-8 Packing information
Figure 31. SO-8 tube shipment (no suffix)
B
Base Q.ty
Bulk Q.ty
Tube length (± 0.5)
A
B
C (± 0.1)
C
A
100
2000
532
3.2
6
0.6
All dimensions are in mm.
Figure 32. SO-8 tape and reel shipment (suffix “TR”)
REEL DIMENSIONS
Base Q.ty
Bulk Q.ty
A (max)
B (min)
C (± 0.2)
F
G (+ 2 / -0)
N (min)
T (max)
2500
2500
330
1.5
13
20.2
12.4
60
18.4
All dimensions are in mm.
TAPE DIMENSIONS
According to Electronic Industries Association
(EIA) Standard 481 rev. A, Feb. 1986
Tape width
Tape Hole Spacing
Component Spacing
Hole Diameter
Hole Diameter
Hole Position
Compartment Depth
Hole Spacing
W
P0 (± 0.1)
P
D (± 0.1/-0)
D1 (min)
F (± 0.05)
K (max)
P1 (± 0.1)
12
4
8
1.5
1.5
5.5
4.5
2
All dimensions are in mm.
End
Start
Top
cover
tape
No components
Components
No components
500mm min
Empty components pockets
saled with cover tape.
500mm min
User direction of feed
19/21
Revision history
5
VNS3NV04D-E
Revision history
Table 10.
20/21
Document revision history
Date
Revision
Changes
28-Oct-2005
1
Initial release.
02-Jul-2007
2
Document reformatted and converted into new ST template.
Table 4: Off - IDSS unit corrected
VNS3NV04D-E
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21/21