Si2303BDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.200 at VGS = - 10 V - 1.64 0.380 at VGS = - 4.5 V - 1.0 VDS (V) - 30 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23) G 1 S 2 3 D Top View Si2303BDS (L3)* * Marking Code Ordering Information: Si2303BDS-T1 Si2303BDS-T1-E3 (Lead (Pb)-free) Si2303BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)b TA = 25 °C TA = 70 °C Pulsed Drain Currenta IS TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range PD V - 1.64 - 1.49 - 1.31 - 1.2 IDM Continuous Source Current (Diode Conduction)b Power Dissipationb ID - 10 - 0.75 A - 0.6 0.9 0.7 0.57 0.45 TJ, Tstg Unit - 55 to 150 W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc Symbol RthJA Typical Maximum 120 145 140 175 Unit °C/W Notes: a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 board, t ≤ 5 s. c. Surface Mounted on FR4 board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72065 S-80642-Rev. C, 24-Mar-08 www.vishay.com 1 Si2303BDS Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Limits Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS = 0 V, ID = - 10 µA - 30 VGS(th) VDS = VGS, ID = - 250 µA - 1.0 IGSS VDS = 0 V, VGS = ± 20 V ± 100 VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C - 10 Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-Resistancea RDS(on) VDS ≤ - 5 V, VGS = - 10 V - 3.0 -6 V nA µA A VGS = - 10 V, ID = - 1.7 A 0.150 0.200 VGS = - 4.5 V, ID = - 1.3 A 0.285 0.380 Forward Transconductancea gfs VDS = - 5 V, ID = - 1.7 A 2.0 Diode Forward Voltage VSD IS = - 0.75 A, VGS = 0 V - 0.85 - 1.2 4.3 10 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = - 15 V, VGS = - 10 V, ID ≅ - 1.7 A nC 0.8 1.3 180 VDS = - 15 V, VGS = 0 V, f = 1 MHz pF 50 35 Switchingc Turn-On Time Turn-Off Time td(on) tr td(off) tf VDD = - 15 V, RL = 15 Ω ID ≅ - 1.0 A, VGEN = - 4.5 V RG = 6 Ω 55 80 40 60 10 20 10 20 ns Notes: a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72065 S-80642-Rev. C, 24-Mar-08 Si2303BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 10 VGS = 10 thru 6 V TC = - 55°C 8 I D - Drain Current (A) I D - Drain Current (A) 8 5V 6 4 4V 2 25 °C 6 125 °C 4 2 2 V, 3 V 0 0 0 2 4 6 8 0 10 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 300 0.8 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 250 0.6 VGS = 4.5 V 0.4 VGS = 10 V 0.2 Ciss 200 150 100 Coss 50 Crss 0.0 0 0 2 4 6 8 10 0 10 15 20 25 ID - Drain Current (A) VDS - Drain-to-Source Voltage On-Resistance vs. Drain Current Capacitance 30 1.6 10 VDS = 15 V ID = 1.7 A VGS = 10 V ID = 1.7 A 1.4 6 4 (Normalized) 8 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 5 1.2 1.0 0.8 2 0 0 1 2 3 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72065 S-80642-Rev. C, 24-Mar-08 4 5 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si2303BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.0 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 150 °C 1 TJ = 25 °C 0.8 0.6 ID = 1.7 A 0.4 0.2 0.0 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 10 0.6 8 Power (W) V GS(th) Variance (V) 8 10 On-Resistance vs. Gate-to-Source Voltage 0.9 ID = 250 µA 0.0 - 0.3 - 0.6 - 50 6 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 0.3 4 6 4 TA = 25 °C 2 0 - 25 0 25 50 75 100 125 0.01 150 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power 100 1000 100 I D - Drain Current (A) 10 10 µs 100 µs Limited by R DS(on)* 1 1 ms 10 ms 0.1 100 ms TA = 25 °C Single Pulse 0.01 0.1 1 DC, 100 s, 10 s, 1 s 10 100 VDS - Drain-to-Source Voltage (V) Square Wave Pulse Duration (s) * VGS > minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Case www.vishay.com 4 Document Number: 72065 S-80642-Rev. C, 24-Mar-08 Si2303BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 62.5 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72065. Document Number: 72065 S-80642-Rev. C, 24-Mar-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1