U2532B IR Transmitter and Receiver Description The IC U2532B is a complete IR-Transmitter-Receiver IC according to the new IrDA 1.0 standard. ASK-modulation is also possible. Only an external PIN-photodiode and an infrared emitting diode with current limiting resistor must be connected to the corresponding pins. The amplifier with Schmitt-Trigger formed output signal and the IR-driver need no further external components. The IC allows data rates from 2.4 kbit/s to 115.2 kbit/s and up to 500 kHz for ASK-modulation. Two different sensitivity modes, which can be programmed by applying a “High” or “Low” voltage at pin SC, ensure either an increase in transmission distance or a bit error rate of 1E-9. An internal AGC allows proper operation under EMI conditions. Features Applications D D D D D D D D D D D Data rates up to 115.2 kbit/s Wide supply voltage range (3 to 5.5 V) AGC for EMI immunity AGC reset IR data transmission Compatible to IrDA Bidirectional IR data transmission Ability to receive ASK modulation High and low sensitivity mode BER < 1E-9 in the low sensitivity mode Power-On reset Case: SO16 V CC RL TxD Driver Amp (AGC) SC ST Reset RxD 95 10210 Figure 1. TELEFUNKEN Semiconductors Rev. A1, 27-Sep-96 1 (10) Preliminary Information U2532B Pin Description 1 16 TxD 2 15 IRED RxD 3 14 O_GND Reset 4 13 NC 12 NC P_GND NC Pin 1 2 3 4 5 6 7, 8, 10, 12, 13, 16 9 11 14 15 U2532B VCC 5 SC 6 11 A_GND NC 7 10 NC NC 8 9 IN Symbol P_GND TxD RxD Reset VCC SC NC Function Power ground Transmitter input Receiver output AGC-Reset Supply voltage Sensitivity Control Not connected IN A_GND O_GND IRED Photodiode input Analog ground Output ground IR-Emitter 95 10244 Figure 2. Pinning Block Diagram 5 15 2 DRV 1 COMP BIAS 3 CGA 9 + – 14 AGC TIA 6 4 11 95 10211 Figure 3. Block diagram 2 (10) Preliminary Information TELEFUNKEN Semiconductors Rev. A1, 27-Sep-96 U2532B Functionality of the Various Circuit Blocks to a value where a BER < 1E-9 is still guaranteed, but sigTransimpedance Amplifier (TIA) The input stage provides the necessary bias voltage for the photodiode and ensures decoupling of the useful signal. This involves processing the dc and ac portions in separate parts of the circuit, BIAS (Bias voltage) and TIA. The BIAS circuit separates the dc part (sunlight, incandescent light) from the input signal. The ac portion of the input current is fed to an inverting amplifier with a sufficiently low input impedance (TIA). The TIA prevents the signal slopes to be negatively affected by the junction capacitance of the photodiode. Controlled Gain Amplifier (CGA) The CGA consists of two differential amplifiers. The total gain is 17 in the high sense mode (Sensitivity Control Input “High”) and can be reduced to 8 if the Sensitivity Control Input is set to “Low”. In the low sense mode a BER of 1E-9 is guaranteed. In the high sense mode eventually generated output pulses must be suppressed by software handling. The lower and upper cut-off frequencies of the amplifier are 25 kHz and 900 kHz respectively. Additionally the overall gain can be attenuated by 30 dB in 2 dB steps. The attenuation is digitally controlled by the AGC (Automatic Gain Control) circuit. Comparator (COMP) The comparator compares the output signal of the CGA to an internal threshold voltage. The output of that comparator is directly connected to an collector output stage. An internal pull up resistor of 20 kW is provided. Automatic Gain Control (AGC) The AGC adjusts the sensitivity of the receiver according to the strength of the incoming signals. When the input signal increases, the amplification of the CGA is reduced TELEFUNKEN Semiconductors Rev. A1, 27-Sep-96 nals from disturbers can be effectively suppressed. With this feature a proper data transmission can be maintained also in the presence of energy saving lamps and ceiling lamps that are common in offices. The dynamic range of the AGC is max. 30 dB. This provides the ability to suppress also strong disturbers. As the AGC acts when the input signal increases, the transmission distance is reduced if disturbances have to be suppressed. The AGC is digitally controlled and therefore not dependent on any time constant. The amplification of the CGA is set at every input pulse or input burst for ASK-modulation and is maintained until the next input signal is detected. The signal strength determines whether to reduce, increase or maintain the gain. If no input signal is detected in 18 ms, the AGC considers the data transmission to be finished and increases the gain by a 2 dB step. Within every 18 ms the gain is increased by an additional 2 dB step, until the maximum gain of the CGA is reached. If a “High” signal is applied at the reset (Pin 4), the AGC is set to maximum sensitivity. Incoming signals don‘t influence the AGC. Under this biasing condition it is possible to get maximum transmission distance also in the presence of a known strong disturber, if of course the signals of the disturber can be succesfully suppressed by software handling in the microprocessor. During “Power-On” the AGC is set to maximum sensitivity. The gain of the AGC is maintained while the transceiver is transmitting. Transmitter IRED Driver (DRV) The IRED driver DRV is also monolithically integrated on the transceiver chip providing a high impedance input to drive a fast IR emitter diode. The “active high” input signal drives the output stage. This stage mainly consists of an input amplifier and an open collector NPN transistor that is saturation controlled. The output transistor is capable of driving a lood current up to 1 A. 3 (10) Preliminary Information U2532B Absolute Maximum Ratings All voltages are referred to A_GND (Pin 11). Parameters Test Conditions / Pins Supply voltage Pin 5 Transmitter input voltage Pin 2 Sensitivity control voltage Pin 6 Reset voltage Pin 4 Receiver output voltage Pin 3 LED driver Pin 15 Input currents Pins 2, 4, 6 and 15 Receiver sinking current Pin 3 Photodiode input Pin 9 Power dissipation Junction temperature Ambient temperature range Storage temperature range Soldering temperature Average driver current Pin 15 Repeated pulsed driver c. < 90 ms, ton < 20%, Pin 15 Peak driver current < 2 ms, ton < 10%, Pin 15 Symbol VCC VIN(TxD) VSC V(Reset) VO(RxD) V(TxD) IL(RxD) VIN Ptot Tj Tamb Tstg Min. –0.5 –0.5 –0.5 –0.5 –0.5 –0.5 Typ. –0.5 –40 –40 Id(DC) Id(RP) Id(PK) Max. 6 VCC+0.5 VCC+0.5 VCC+0.5 VCC+0.5 6 1 10 VCC 75 150 125 150 230 100 500 1 Unit V V V V V V mA mA V mW °C °C °C °C mA mA A Thermal Resistance Parameters Junction ambient Symbol RthJA 4 (10) Preliminary Information Value 180 Unit K/W TELEFUNKEN Semiconductors Rev. A1, 27-Sep-96 U2532B Electrical Characteristics Test conditions: VCC = 5 V, Tamb = 25°C, unless otherwise specified Parameters Receiver Supported data rates Supply voltage range Supply current Sensitivity control voltage “Low” Sensitivity control voltage “High” Input threshold current Input threshold current Input threshold current for ASK modulation Input threshold current for ASK modulation Max. signal pulse input current DC input current Output voltage RxD Output voltage RxD Rise time Fall time Output pulse width Output pulse width Output delay time Jitter AGC dynamic range AGC single step Max. reset time Test Conditions / Pins Symbol Low sense mode Pin 5 Pin 5 Pin 6 VCC IS VSC High sense mode Pin 6 VSC SC > 0.5 V Pin 9 VCC = 3 V SC > 2.4 V, VCC = 3 V Pin 9 SC < 0.5 V or open Pin 9 VCC = 3 V SC < 2.4 V or open Pin 9 VCC = 5 V Sensitivity independent Pin 9 VIN > 0 V Pin 9 Non active Pin 3 Active; IL = 4 mA Pin 3 C = 15 pF,R = 2.2 k Pin 3 C = 15 pF,R = 2.2 k Pin 3 2.4 kbit/s, 78 s pulse width Pin 3 115.2 kbit/s, 1.6 s pulse width Pin 3 115.2 kbit/s, 1.6 s pulse width – Output level 0.5 VCC – Leading edges of signals – Related to optical input Pin 3 115.2 kbit/s, 1.6 s pulse width – Period of 10 bits, all “ones” – Leading edges of signals Pin 3 Pin 3 Pin 3 15 steps, covering full dynamic range of AGC Pin 3 TELEFUNKEN Semiconductors Rev. A1, 27-Sep-96 Min. 2.4 3 2.0 Typ. Max. Unit 5 1.3 0.2 115.2 5.5 2.5 0.5 kbit/s V mA V VCC V ilNmin 60 90 nA ilNmin 30 45 nA ilNmin (ASK) ilNmin (ASK) ilNmax 200 400 nA 120 250 nA 6 mA 200 mA IIN VOH VOL tr tf tp VCC–0.5 0.2 0.5 0.3 7 0.5 15 V V s s s tp 2.5 4 s td 1 2 s 2 s 400 dB dB ms tj treset 30 2 270 5 (10) Preliminary Information U2532B Parameters Transmitter Output voltage IRED “Low” Logic “Low” transmitter input voltage Logic “High” transmitter input voltage Output leakage current Output rise time Output fall time Output pulse width Overshoot over final current Jitter Test Conditions / Pins Symbol Id = 300mA with appropriate current limiting resistor Pin 15 Pin 2 VO(TxD) = 6 V Id = 300 mA Id = 300 mA 115.2 kbit/s 1.6 ms pulse width Typ. Max. Unit VOL(TxD) 0.3 0.5 V VIN (TxD) 0.4 0.8 V Pin 2 VIN (TxD) Pin 15 Pin 15 Pin 15 Id0 tr tf tp Pin 15 Pin 15 115.2 kbit/s, 1.6 ms pulse width –Period of 10 bits, all “ones” – Leading edges of signals Pin 15 Min. 2 VCC V 10 300 300 2.7 mA dId 25 % tj 0.2 ms 1.4 6 (10) Preliminary Information 1.6 ns ns ms TELEFUNKEN Semiconductors Rev. A1, 27-Sep-96 U2532B Typical Performance Characteristics 1.4 1.4 1.2 1.2 Rel Output Low Voltage Rel Supply Current Test condition: Vcc = 5 V 1.0 0.8 0.6 0.4 0.2 0 –40 –20 0 20 40 60 0.6 0.4 0 –40 –20 80 100 120 140 Tj Temperature ( °C ) Figure 4. Supply current vs. temperature 1.2 1.2 1.0 1.0 0.2 0.2 20 40 60 Figure 5. Input threshold current vs. temperature (receiver) TELEFUNKEN Semiconductors Rev. A1, 27-Sep-96 0 –40 –20 80 100 120 140 Tj Temperature ( °C ) 80 100 120 140 0.6 0.4 0 60 0.8 0.4 0 –40 –20 40 Figure 6. Output voltage IRED “LOW” vs. temperature (transmitter) 1.4 0.6 20 Tj Temperature ( °C ) 1.4 0.8 0 12473 Rel Pulse Width Rel Input Threshold Current 0.8 0.2 12471 12472 1.0 0 20 40 60 80 100 120 140 Tj Temperature ( °C ) 12474 Figure 7. Output pulse width vs. temperature (receiver, 115 kbit/s) 7 (10) Preliminary Information U2532B Application Circuit The diagram below shows the typical application for the IC U2532B. The detector diode and IR emitter can also be obtained from TEMIC. As emitter a high speed infrared emitting diode like TSHF5400 is recommended. For improving output power two diodes can be connected in series. An external current limiting resistor is used to adjust the appropriate forward current. The resulting current of the emitter, with the settings RL = 5 W and VCC = 5 V, is Id = 300 mA and the corresponding typical radiant intensity of a single diode is IE = 120 mW/sr. The IR radiation detector BPV22NF is a high speed and high sensitive PIN photodiode in a plastic package with a spherical side view lens. Because of a large radiant sensitive area of A = 7.5 mm2 a typical output current of Ira = 85 mA with Ee = 1 mW/cm2 and l = 870 nm is achieved. A transmitting distance of approximately 3.5 m is possible. Rs and C are the low pass filter network to suppress power supply noise and other disturbances. At pin RxD the output signal can be received. Optionally an external load resistor can be connected from pin 3 to VCC, if a smaller pull up resistor than 20 kW is desired. VCC RS 100 C W (5 V) 470 nF 16 1 TxD RL 15 2 TSHF 5400 RxD mC Reset 3 14 4 13 5W U2532B SC 5 12 6 11 7 10 8 9 BPV22NF 95 10212 Figure 8. 8 (10) Preliminary Information TELEFUNKEN Semiconductors Rev. A1, 27-Sep-96 U2532B Dimensions in mm 94 8875 Figure 9. TELEFUNKEN Semiconductors Rev. A1, 27-Sep-96 9 (10) Preliminary Information U2532B Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 10 (10) Preliminary Information TELEFUNKEN Semiconductors Rev. A1, 27-Sep-96