TEMIC U426B

U426B
Infrared Driver
Description
The U426B is an IR-driver IC for IR data communication.
The circuit contains a programmable constant current
source (DRV) to drive the IRED. The current is programmed by an external resistor (RS). With the internal
comparator (COMP) an external voltage can be monitored. The low-power standby mode, controlled by means
of the WAKE input, makes the circuit well suited for battery-powered systems.
Features
Applications
D
D
D
D
D
D Keyless entry systems
D Remote control
D Wireless data communication
Programmable constant current 200 mA to 1.2 A
Signal frequency up to 500 kHz
Low-power standby mode
Internal voltage comparator
Wide voltage range 2.4 V to 12 V
Ordering Information
Extended Type Number
U426B-FP
Package
SO8
Remarks
VBatt
U426B
Controller
IRED
DATA
WAKE
DRV
MON–O
RS
MON–I
COMP
95 9947
Figure 1. Block diagram for an IR transmitter
Rev. A2, 15-Oct-98
1 (6)
U426B
Pin Description
VS
1
8
GND
DATA
2
7
IRED
Pin
1
8
2
Symbol
VS
GND
DATA
7
IRED
6
SHUNT
3
MON-I
4
MON-O
5
WAKE
U426B
MON–I
3
6
SHUNT
MON–O
4
5
WAKE
95 9877
Figure 2. Pinning
Function
Supply voltage
Circuit ground
Data input for switching the
IRED output current on and off
IR-LED output; when the data
input is high, this output supplies
the IR LED with the constant
current
The resistor at this pin adjusts
the IRED output current
Voltage monitor input of the
internal comparator
Voltage monitor output. This
open collector output is active
when the voltage at MON-I is
below the internal reference
V3 = 525 mV typ.
WAKE input. When being LOW,
the circuit is in standby mode. A
high level activates the circuit
Block Diagram
VS
IRED
+
DATA
–
WAKE
Power
supply
SHUNT
VShunt
= 150 mV
typ.
DRV
MON–O
MON–I
–
+
V3
= 525 mV
typ.
COMP
GND
95 9948
COMP Monitoring comparator
DRV IRED constant current driver
Figure 3. Block diagram
2 (6)
Rev. A2, 15-Oct-98
U426B
Constant Current Driver (DRV)
The constant current driver converts the incoming data
pulses into adequate constant current pulses. A high level
applied to the data input causes a constant current flow
through the IR diode connected to the IRED output. This
current can be programmed via the external resistor (RS).
To calculate the output current, use the following
formula:
I RED
+ 150
Monitoring Comparator (COMP)
mV
RS
Power Supply
The power-supply circuit generates the internal supply
voltage from an external voltage (VS = 2.4 V to 12 V).The
Pin VS is protected by an internal suppressor diode
WAKE
internal
circuit state
against voltages above 13 V. The internal supply voltage
can be switched on/off with a high/low level at the WAKE
input. Setting WAKE to low level switches the circuit
from busy to standby mode which results in a very low
current consumption (2 mA). Every change between busy
and standby mode needs a latency of up to 1 ms. Data
transmission and voltage monitoring only takes place
while WAKE remains high.
The monitoring comparator compares the voltage at Pin
MON-I to an internal reference voltage of V3 = 525 mV
typ. The open collector output transistor is active if the
voltage at Pin MON-I falls below the internal threshold
voltage. The comparator can be used to monitor the power-supply battery.
Busy
Standby
Standby
tSB
tSB
DATA
IRED
td
Output current
MON–I
MON–O
95 9878
Figure 4. Timing diagram
Rev. A2, 15-Oct-98
3 (6)
U426B
Absolute Maximum Ratings
Parameters
Supply voltage
Supply current
t < 10 ms
Input voltages
Pin 1
Pins 2, 3 and 5
Pin 6
Pins 2, 3 and 5
Pin 7
Pin 4
Input currents
Output voltage
Output current
t < 100 ms
Pin 7
Pin 4
Power dissipation Tamb = 85°C
SO8 : on PC board
on ceramic
on ceramic with silicon grease
Junction temperature
Ambient temperature range
Storage temperature range
Symbol
VS
IS
is
VI
II
V7
V4
Value
13.4
40
150
VS
1
1
13.4
VS
Unit
V
mA
mA
V
V
mA
V
V
I7
I4
1.5
5
A
mA
Ptot
Ptot
Ptot
Tj
Tamb
Tstg
150
250
430
125
–40 to 85
–40 to 150
mW
mW
mW
°C
°C
°C
Symbol
RthJA
RthJA
RthJA
Value
220
140
80
Unit
K/W
K/W
K/W
Thermal Resistance
Junction ambient
Parameters
SO8: on PC board
on ceramic
on ceramic with silicon grease
Electrical Characteristics
VS = 6 V, Tamb = 25°C, reference point Pin 8, unless otherwise specified
Parameters
Supply current
Supply voltage
Standby current
Wake-up current
Overvoltage protection
DATA
Input signal
Common-mode input
Rise time
Fall time
Signal frequency
Input current
MON-I
Reverse current
Input voltage HIGH
Input voltage LOW
Hysteresis
Temperature coefficient
Input current
4 (6)
Test Conditions / Pins
Pin 1
Pin 1
Without pulse
I1 = 20 mA
Symbol
Min.
Typ.
VS
II
II
VS
2.4
V2
V2
3
1.6
0
3.6
2.1
485
515
525
545
4
100
Max.
Unit
12
2
1.5
mA
13
V
mA
V
Pin 2
High
Low
tr
tf
f
I2
4.2
2.6
VS
500
500
500
100
V
V
V
ns
ns
kHz
mA
0.8
555
580
mA
mV
mV
%
mA/K
mA
Pin 3
V3 = 0 V
MON-I on
MON-O off
Ir
V3
V3
V3 = 6 V
TC
I3
0.3
Rev. A2, 15-Oct-98
U426B
Electrical Characteristics (continued)
VS = 6 V, Tamb = 25°C, reference point Pin 8, unless otherwise specified
Parameters
MON-O
Output current
Output current
Reverse current
Output voltage HIGH
Saturation voltage
WAKE
Input current
Input voltage HIGH
Input voltage LOW
SHUNT
Output current IRED
Shunt voltage
Temperature coefficient
IRED
Output voltage
Output voltage
Reverse current
Rise/fall time
Delay time
Standby/busy
Busy/standby
Test Conditions / Pins
Pin 4
V4 ≥ 200 mV
V4 ≥ 400 mV
V4 ≤ 6 V
I4 = 1 mA
Symbol
Min.
I4
I4
Ir
1
3
Typ.
Max.
Unit
Vsat
0.2
VS
200
mA
mA
mA
V
mV
I5
I5
V5
V5
mA
mA
0
80
±0.2
VS
0.2
205
220
235
1.25
1.3
140
245
265
275
1.5
1.55
160
mA
mA
mA
A
A
mV
Pin 5
V5 = 6 V
V5 = 0 V
Busy
Standby
Pin 6
VS = 2.4 V; RS = 0.62 W
VS = 6.0 V; RS = 0.62 W
VS = 12 V; RS = 0.62 W
VS = 6 V; RS = 0.11 W
VS = 12 V; RS = 0.11 W
V2 = VS = 6 V;
RS = 0.11 W
Tamb = –40 to 85°C
Pin 7
V2 = VS = 6 V; I7 = 1 A
V2 =0 V; I7 = 0
V2 =0 V; V7 = 6 V
Pin 2 to Pin 7
I7
I7
I7
I7
I7
VShunt
150
TC
mV/K
40
Vout
Vout
Ir
tr
td
tSB
tBS
12
V
V
1000
13.2
1
300
1
1
1
mV
V
mA
ns
ms
ms
ms
Package Information
5.2
4.8
Package SO8
5.00
4.85
Dimensions in mm
3.7
1.4
0.25
0.10
0.4
1.27
6.15
5.85
3.81
8
0.2
3.8
5
technical drawings
according to DIN
specifications
13034
1
Rev. A2, 15-Oct-98
4
5 (6)
U426B
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with respect to their impact on the health and safety of our employees and the public, as well as their impact on
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2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
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TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2594, Fax number: 49 ( 0 ) 7131 67 2423
6 (6)
Rev. A2, 15-Oct-98