TOSHIBA 2SC6010

2SC6010
TOSHIBA Transistor
Silicon NPN Triple Diffused Type
2SC6010
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
•
Unit: mm
High speed switching: tf = 0.24μs (max) (IC = 0.3A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
600
V
Collector-emitter voltage
VCEX
600
V
Collector-emitter voltage
VCEO
285
V
Emitter-base voltage
VEBO
8
V
DC
IC
1.0
Pulse
ICP
2.0
IB
0.5
A
JEDEC
―
PC
1.0
W
JEITA
―
Tj
150
°C
TOSHIBA
Tstg
−55 to 150
°C
Weight:
Collector current
Base current
Collector power
dissipation
Ta = 25°C
Junction temperature
Storage temperature range
1. Base
2. Collector
3. Emitter
A
2-7D101A
g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
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2SC6010
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 600 V, IE = 0
―
―
100
μA
Emitter cut-off current
IEBO
VEB = 8 V, IC = 0
―
―
100
μA
Collector-base breakdown voltage
V (BR) CBO
IC = 1 mA, IB = 0
600
―
―
V
Collector-emitter breakdown voltage
V (BR) CEO
V
IC = 10 mA, IB = 0
285
―
―
hFE (1)
VCE = 5 V, IC = 1 mA
80
―
200
hFE (2)
VCE = 5 V, IC = 0.1 A
100
―
200
hFE (3)
VCE = 5 V, IC = 0.2 A
60
―
―
Collector emitter saturation voltage
VCE (sat)
IC = 0.6 A, IB = 75 mA
―
―
1.0
V
Base-emitter saturation voltage
VBE (sat)
IC = 0.6 A, IB = 75 mA
―
―
1.3
V
―
―
0.4
―
―
3.0
―
―
0.24
VCC ≈ 200 V
20 μs
tr
IB1
Rise time
IB2
Switching time
Storage time
tstg
INPUT
IB1
IC
IB21
667 Ω
DC current gain
OUTPUT
μs
IB1 = 20 mA, −IB2 = 50 mA
Fall time
tf
DUTY CYCLE ≤ 1%
Marking
C6010
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
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2SC6010
IC – VCE
1.0
200
IC – VCE
2.0
100
150
60
(A)
0.8
1.6
Common emitter
Ta=25℃
Pulse test
0.6
20
0.4
IB = 5 mA
0.2
0.4
0.8
1.2
1.6
Collector-emitter voltage
100
0.8
20
10
IB = 5 mA
0
0
2
2
4
VCE (V)
Ta = 100°C
100
25
−55
10
1
0.001
0.01
0.1
Collector current IC
1
Ta = 100°C
0.1
−55
25
0.01
0.001
1
0.01
(A)
Collector current IC
Base-emitter saturation voltage
VBE (sat) (V)
Ta = −55°C
100
0.01
1
(A)
IC – VBE
1.0
25
0.1
0.001
0.1
Collector current IC
(A)
Common emitter
IC/IB = 8
Pulse test
1
10
Common emitter
β= 8
Pulse test
VBE (sat) – IC
10
8
VCE (V)
VCE (sat) – IC
10
Collector-emitter saturation voltage
VCE (sat) (V)
DC current gain hFE
Common emitter
VCE = 5 V
Pulse test
6
Collector-emitter voltage
hFE – IC
1000
150
1.2
0.4
Common emitter
Ta=25℃
Pulse test
0
0
200
80
60
40
40
Collector current IC
Collector current IC
(A)
80
0.1
Collector current IC
0.8
Common emitter
VCE = 5 V
Pulse test
0.6
Ta = 100°C
−55
0.4
0.2
25
1
0
0
(A)
0.2
0.4
0.6
Base-emitter voltage
3
0.
1.0
1.2
VBE (V)
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2SC6010
rth – tw
Transient thermal resistance rth (°C/W)
1000
100
10
Curves should be applied in thermal
limited area. (single nonrepetitive pulse)
Ta=25℃
1
0.001
0.01
0.1
1
Pulse width
10
100
1000
tw (s)
Safe Operating Area
Switching Characteristics – IC
5
10
IC = 8IB1
2IB1 = −IB2
VCC ≈ 200 V
Pulse width = 20μs
Duty cycle
≤ 1%
Ta = 25°C
3
IC max (Pulse)*
10 μs*
10 ms*
1 ms*
0.1
tstg
1
0.5
0.3
tf
DC operation
Ta = 25°C
0.1
0.1
0.3
0.5
1
3
Collector current IC
0.01
5
10
(A)
*:Single nonrepetitive pulse
Ta = 25°C
must
be
linearly
with
increase
derated
in
VCEO max
temperature.
10
Collector-emitter voltage
100
1000
PC – Ta
VCE (V)
1.2
PC (W)
0.001
1
Curves
Collector power dissipation
Collector current IC
(A)
100 ms*
Switching time (μs)
1
100 μs*
1.0
0.8
0.6
0.4
0.2
0
0
40
80
120
160
200
Ambient temperature Ta (°C)
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2SC6010
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
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