2SK3857TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3857TK For ECM Unit: mm Application for Ultra-compact ECM Unit VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25°C) PD 100 mW Tj 125 °C Tstg −55~125 °C Junction Temperature Storage temperature range Note: 0.9±0.1 Rating 0.32±0.05 0.8±0.05 3 2 0.1±0.05 Gate-Drain voltage Symbol 1.2±0.05 1 0.395±0.03 Characteristic 1.4±0.05 Absolute Maximum Ratings (Ta=25°C) 0.45 0.45 0.22±0.05 • Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1.Drain 2.Source 3.Gate TESM3 JEDEC - JEITA - TOSHIBA 2-1R1A Weight: 2.2mg (typ.) IDSS CLASSIFICATION A-Rank 140~240µA B-Rank 210~350µA Marking Equivalent Circuit D Type Name 9 IDSS Classification Symbol A :A -Rank B :B-Rank G S 1 2007-11-01 2SK3857TK Electrical Characteristics (Ta=25°C) Characteristic Symbol Drain Current IDSS Drain Current ID Gate-Source Cut-off Voltage VDS = 2 V, VGS = 0 VDD = 2 V, RL= 2.2kΩ,Cg = 5pF VGS(OFF) VDS = 2 V, ID = 1μA Forward transfer admittance Gate-Drain Voltage Test Condition |Yfs| VDS = 2 V,VGS = 0V V(BR)GDO IG=-10μA Input capacitance Ciss VDS = 2 V, VGS = 0, f = 1 MHz Voltage Gain Gv VDD = 2V, RL= 2.2kΩ,Cg = 5pF, f = 1kHz,vin=100mV Min Typ. Max Unit 140 ⎯ 350 µA ⎯ ⎯ 370 µA -0.1 ⎯ -1.0 V 0.9 1.3 ⎯ mS -20 ⎯ ⎯ V ⎯ 3.5 ⎯ pF -3.0 -0.5 ⎯ dB Delta Voltage Gain DGv(f) VDD = 2V, RL= 2.2kΩ,Cg = 5pF,f = 1kHz to 100Hz,vin=100mV ⎯ 0 -1 dB Delta Voltage Gain DGv(V) VDD = 2V to 1.5V, RL= 2.2kΩ,Cg = 5pF,f = 1kHz, vin=100mV ⎯ -0.8 -2 dB VDD = 2V, RL= 1kΩ,Cg = 10pF,Gv=80dB, A-Curve Filter ⎯ 25 55 mV VDD = 2V, RL= 2.2kΩ,Cg = 5pF, f = 1kHz, vin=50mV ⎯ 0.7 ⎯ % VDD = 2V, RL= 2.2kΩ,Cg = 5pF ⎯ 100 200 ms Noise Voltage VN Total Harmonic Distortion THD Time Output Stability tos Time Output Stability Test Method a) TEST CIRCUIT b) TEST SIGNAL 2.2kΩ VDD 2V VDD=2.0V 50% Vout 0V VDD-ID*RL 90% 5pF Vout 0V tos 2 2007-11-01 2SK3857TK ID – VGS 600 VDS=2V Common Source VDS=2V Common Source Ta = 25 °C (µA) ID 400 300 IDSS=330μA 200 400 Ta=85℃ Drain Current ID Drain Current 500 (µA) 500 ID – VGS 600 300 Ta=25℃ 200 Ta=-40℃ 100 100 IDSS=150μA 0 -1.0 -0.8 -0.6 -0.4 Gate - Source voltage -0.2 0 -1.0 0 Common Source Ta = 25 °C -0.2 0 VGS (V) IDSS=330μA 500 + 0.1 V (µA) (µA) 500 400 300 ID IDSS=170μA Drain Current ID -0.4 ID – VDS 600 Common Source Ta = 25 °C Drain Current -0.6 Gate - Source voltage VGS (V) ID – VDS 600 -0.8 + 0.1 V + 0.05 V 200 VGS = 0 V – 0.05 V 100 400 + 0.05 V VGS = 0 V 300 – 0.05 V 200 – 0.1 V 100 – 0.1 V 0 1.0 0 0 2.0 Drain - Source voltage VDS (V) Gate-Source Cut-off Voltage VGS(OFF) (V ) Forward transfer admittance |Yfs| (mS) |Yfs|:VDS=2V VGS=0V IDSS: VDS=2V VGS=0V Common Source Ta = 25 °C 200 300 Drain Current IDSS (V) -500 2 100 VDS VGS(OFF) – IDSS |Yfs| – IDSS 0 2.0 Drain - Source voltage 3 1 1.0 0 400 500 -400 -300 -200 -100 0 600 VGS(OFF):VDS=2V ID = 1μA IDSS:VDS=2V VGS=0V Common Source Ta = 25 °C 0 100 200 300 Drain Current (µA) 3 400 IDSS 500 600 (µA) 2007-11-01 2SK3857TK DGv(V)– IDSS Gv– IDSS -3.0 (dB) 1 DGv(V) –1 Gv:VDD=2V Cg=5pF RL= 2.2kΩ, f=1kHz vin=100mV IDSS: VDS=2V VGS=0V Common Source Ta = 25°C –2 –3 –4 -2.5 0 100 200 300 Drain Current 400 IDSS -2.0 -1.5 Delta Voltage Gain Voltage Gain Gv (dB) 0 -1.0 -0.5 0 600 500 DGv:VDD=2V to 1.5V Cg=5pF RL= 2.2kΩ, f=1kHz vin=100mV IDSS: VDS=2V VGS=0V Common Source Ta = 25°C 0 100 200 300 Drain Current (µA) Gv – Cg 0 IDSS=170μA -5 VDD=2V Cg=5pF RL= 2.2kΩ, f=1kHz vin=100mV Common Source Ta = 25°C -10 -15 2 4 6 Electret Capacitance 8 Cg (mV) IDSS=350μA 50 VN 5 40 Noise Voltage Voltage Gain Gv (dB) 60 0 30 20 0 10 0 300 400 IDSS 500 600 (µA) Ciss (pF) 10 Input capacitance Total Harmonic Distortion THD (%) 1.0 0.5 0 5 3 1 Drain Current 200 Ciss – VDS IDSS: VDS=2V VGS=0V Common Source Ta = 25°C 300 100 Drain Current (pF) 1.5 200 (µA) VN:VDD=2V Cg=10pF RL= 1kΩ f=1kHz 80dB AMP A-Curve Filter IDSS: VDS=2V VGS=0V 10 THD:VDD=2V Cg=5pF RL= 2.2kΩ f=1kHz vin=50mV 100 600 Common Source Ta = 25°C THD– IDSS 2.0 0 IDSS 500 VN – IDSS 10 -20 400 400 IDSS 500 600 VGS=0V f=1kHz Common Source Ta = 25°C 1 Drain - Source voltage (µA) 4 10 5 VDS (V) 2007-11-01 2SK3857TK RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01