SSM6J205FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM6J205FE High-Speed Switching Applications Power Management Switch Applications • • • 1.8V drive P-ch 2-in-1 Low ON-resistance: Unit: mm Ron = 460 mΩ (max) (@VGS = −1.8 V) Ron = 306 mΩ (max) (@VGS = −2.5 V) Ron = 234 mΩ (max) (@VGS = −4.0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Drain-source voltage VDS −20 V Gate-source voltage VGSS ±8 V DC ID −0.8 Pulse IDP −1.6 Drain current Drain power dissipation Unit A PD (Note 1) 500 Channel temperature Tch 150 mW °C 1, 2, 5, 6 : Drain Storage temperature range Tstg −55 to 150 °C 3 : Gate 4 : Source Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (total dissipation) 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm ) ES6 JEDEC ― JEITA ― TOSHIBA 2-2N1A Weight: 3 mg (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Drain-source breakdown voltage Symbol Test Conditions Min Typ. Max V (BR) DSS ID = − 1 mA, VGS = 0 − 20 ⎯ ⎯ V (BR) DSX ID = − 1 mA, VGS = + 8 V − 12 ⎯ ⎯ Unit V Drain cutoff current IDSS VDS = − 20 V, VGS = 0 ⎯ ⎯ − 10 μA Gate leakage current IGSS VGS = ± 8 V, VDS = 0 ⎯ ⎯ ±1 μA − 0.3 ⎯ − 1.0 V S Vth VDS = − 3 V, ID = − 1 mA Forward transfer admittance ⏐Yfs⏐ VDS = − 3 V, ID = − 0.6 A (Note 2) 1.5 2.5 ⎯ ID = − 0.6 A, VGS = − 4.0 V (Note 2) ⎯ 175 234 Drain-source ON-resistance RDS (ON) ID = − 0.4 A, VGS = − 2.5 V (Note 2) ⎯ 230 306 ID = − 0.1 A, VGS = − 1.8 V (Note 2) ⎯ 300 460 ⎯ 250 ⎯ pF Gate threshold voltage Input capacitance Ciss VDS = − 10 V, VGS = 0, f = 1 MHz mΩ Output capacitance Coss VDS = − 10 V, VGS = 0, f = 1 MHz ⎯ 45 ⎯ pF Reverse transfer capacitance Crss VDS = − 10 V, VGS = 0, f = 1 MHz ⎯ 35 ⎯ pF ton VDD = − 10 V, ID = − 0.25 A, ⎯ 12 ⎯ toff VGS = 0 to − 2.5 V, RG = 4.7 Ω ⎯ 18 ⎯ ⎯ 0.85 1.2 Switching time Turn-on time Turn-off time Drain-source forward voltage VDSF ID = 0.8 A, VGS = 0 V (Note 2) ns V Note 2: Pulse test 1 2007-11-01 SSM6J205FE Switching Time Test Circuit (a) Test Circuit (b) VIN OUT 0 RG − 2.5 V 10 μs 10 % (c) VOUT VDD Marking 90 % −2.5 V RL VDD = – 10 V RG = 4.7 Ω D.U. < =1% VIN: tr, tf < 5 ns Common Source Ta = 25 °C 6 0V IN VDS (ON) 90 % 10 % VDD tr ton tf toff Equivalent Circuit (top view) 5 4 6 5 4 3 1 2 3 KO 1 2 Precaution Vth can be expressed as the voltage between gate and source when the low operating current value is ID= − 1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth, and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on). ) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2007-11-01 SSM6J205FE ID - VDS -5 - 10 - 4.0 1 Drain Current ID (A) -4 Drain Current ID (A) ID - VGS 10 - 2.5 -3 -2 - 1.8 -1 Ta = 85 °C 0.1 0.01 25 °C - 25 °C 0.001 - 1.5 Common Source VDS = - 3 V Common Source VGS = - 1.2 Ta = 25 °C -0 0.0001 -0.0 -0.2 -0.4 -0.6 -0.8 Drain-Source Voltage VDS (V) -1.0 0 RDS(ON) - VGS 250 200 - 0.4 A 150 ID = - 0.1 A 100 50 0 300 - 1.8 V , - 0.1 A 250 200 - 2.5 V , - 0.4 A 150 VGS = - 4 V , ID = - 0.8 A 100 50 0 -0 -1 -2 -3 -4 -5 -6 -7 -8 Gate-Source Voltage VGS (V) -9 -10 -60 -40 -20 Gate Threshold Voltage Vth(V) 300 - 1.8 V 200 - 2.5 V 150 VGS = - 4 V 100 Common Source Ta = 25 °C 50 Common Source ID = - 1 mA VDS = - 3 V -0.8 -0.6 -0.4 -0.2 -0 0 -60 -40 -20 0 -0 -1 -2 -3 -4 20 40 60 80 100 120 140 160 Vth - Ta -1 350 250 0 Ambient Temperature Ta(℃) RDS(ON) - ID 400 Drain-Source ON-Resistance RDS(ON) (mΩ) Common Source 350 - 0.8 A 2 RDS(ON) - Ta 400 Common Source Ta = 25 °C Drain-Source ON-Resistance RDS(ON) (mΩ) Drain-Source ON-Resistance RDS(ON) (mΩ) 300 1 Gate-Source Voltage VGS (V) 20 40 60 80 100 120 140 160 -5 Ambient Temperature Ta(°C) Drain Current ID (A) 3 2007-11-01 SSM6J205FE |Yfs| - ID Drain Reverse Current IDR (A) |Yfs| (S) - 25 °C Ta = 85 °C 1.0 IDR - VDS -10 25 °C Common Source VDS = - 3 V Ta = 25 °C 0.1 Common Source VGS = 0 V Ta = 25 °C -1 25 °C - 25 °C -0.1 Ta = 85 °C -0.01 -0.001 -0.01 -0.1 -1 -10 0 0.2 0.4 0.6 0.8 Drain-Source Voltage VDS (V) Drain Current ID (A) C - VDS 1000 Switching Time t (ns) 100 Coss Common Source VGS = 0 V f = 1 MHz Ta = 25 °C toff 1 10 Common Source VDD = 10 V VGS = 0 to 2.5 V Ta = 25 °C 100 tf 10 ton tr Crss 10 0.1 1 t - ID 1000 Ciss 1 -0.01 100 Drain-Source Voltage V DS (V) -0.1 -1 Drain Current ID (A) -10 PD - Ta 1000 Mounted on an FR4 board (25.4mm×25.4mm×1.6mm) Cu Pad :25.4mm×25.4mm Drain Power Dissipation PD (mW) Capacitance C (pF) Forward Transfer Admittance 10.0 800 600 400 200 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta (°C) 4 2007-11-01 SSM6J205FE RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2007-11-01