SSM6J51TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) SSM6J51TU High Current Switching Applications Unit: mm • Suitable for high-density mounting due to compact package • Low on-resistance: Ron = 54 mΩ (max) (@VGS = -2.5 V) 85 mΩ (max) (@VGS = -1.8 V) 150mΩ(max) (@VGS = -1.5 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage VDS -12 V Gate-Source voltage VGSS ±8 V DC ID -4 Pulse IDP -8 PD (Note 1) 500 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current Drain power dissipation Note: A 1,2,5,6 : Drain : Gate 3 : Source 4 JEDEC - JEITA Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in 2-2T1D TOSHIBA temperature, etc.) may cause this product to decrease in the Weight: 7 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Marking 6 Equivalent Circuit (top view) 5 4 6 5 4 3 1 2 3 KPC 1 2 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against static electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. 1 2007-11-01 SSM6J51TU Electrical Characteristics (Ta = 25°C) Characteristics Symbol Gate leakage current Drain-Source breakdown voltage Forward transfer admittance Drain-Source on-resistance Typ. Max Unit μA VGS = ±8 V, VDS = 0 − − ±10 V (BR) DSS ID = −1 mA, VGS = 0 −12 − − ID = −1 mA, VGS = +8 V −4 − − VDS = −12 V, VGS = 0 − − −10 μA −0.3 − −1.0 V S IDSS Gate threshold voltage Min IGSS V (BR) DSX Drain cut-off current Test Condition Vth VDS = −3 V, ID = −1 mA ⏐Yfs⏐ VDS = −3 V, ID = −2.0 A (Note 2) 6.0 12.0 − ID = −2.0 A, VGS = −2.5 V (Note 2) − 38 54 ID = −1.0 A, VGS = −1.8 V (Note 2) − 48 85 ID = −0.3 A, VGS = −1.5 V (Note 2) − 60 150 RDS (ON) V mΩ Input capacitance Ciss VDS = −10 V, VGS = 0, f = 1 MHz − 1700 − Reverse transfer capacitance Crss VDS = −10 V, VGS = 0, f = 1 MHz − 190 − pF Output capacitance Coss VDS = −10 V, VGS = 0, f = 1 MHz − 210 − pF Switching time Turn-on time ton VDS = −10 V, ID = −2.0 A, − 57 − Turn-off time toff VGS = 0~−2.5 V, RG = 4.7 Ω − 120 − ns Note 2: Pulse test Switching Time Test Circuit (a) Test Circuit (b) VIN ID 0 out 10% 90% −2.5 V in −2.5 V 0V VDS (ON) 90% RG 10 μs VDD (c) VOUT VDD = -10 V RG = 4.7 Ω D.U. < = 1% VIN: tr, tf < 5 ns Common Source Ta = 25°C VDD 10% tr ton tf toff Precaution Vth can be expressed as the voltage between the gate and source when the low operating current value is ID = -1mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on).) Be sure to take this into consideration when using the device. 2 2007-11-01 SSM6J51TU ID – VDS -8 ID – VGS -1.5V -7 -10000 Common Source Ta = 25°C -4V Common Source VDS = -3 V (mA) -1.8V -4 -3 VGS=-1.2V -2 Ta = 85°C -10 25°C -1 −25°C -0.1 -1 0 -100 ID -2.5V Drain current (A) -5 Drain current -6 ID -1000 0 -0.5 -1 -1.5 Drain - Source voltage VDS -0.01 0 -2 -0.2 (V) -0.4 Drain – Source on-resistance RDS (ON) (mΩ) Drain – Source on-resistance RDS (ON) (mΩ) -1.2 -1.4 -1.6 VGS (V) RDS (ON) – VGS ID = -0.3 A 150 100 25°C 50 Ta = 85°C ID = -2A Common Source 150 100 25°C 50 Ta = 85°C −25°C 0 -1.0 200 Common Source 0 -0.8 Gate - Source voltage RDS (ON) – VGS 200 -0.6 −25°C -2 -6 -4 Gate - Source voltage 0 -8 0 VGS (V) -2 -4 Gate - Source voltage RDS (ON) – ID -6 -8 VGS (V) RDS (ON) – Ta 100 100 Common Source Common Source 80 Drain – Source on-resistance RDS (ON) (mΩ) Drain – Source on-resistance RDS (ON) (mΩ) Ta = 25°C -1.5V 60 -1.8V -2.5V 40 -4V 20 0 0 -2 -4 Drain current -6 ID 80 60 40 (A) 2A / -2.5 V -1A / -1.8 V 20 0 −50 -8 ID =-0.3A / VGS = -1.5 V 0 50 Ambient temperature 3 100 Ta 150 (°C) 2007-11-01 SSM6J51TU Vth (V) Gate threshold voltage Common Source -0.7 -0.5 VDS = -3V ID = -1mA 10 Forward transfer admittance -0.6 (S) |Yfs| – ID 30 ⎪Yfs⎪ Vth – Ta -0.8 -0.4 -0.3 -0.2 -0.1 0 −25 0 25 50 75 100 Ambient temperature Ta 125 150 Common Source VDS = -3V 0.03 Ta = 25°C 0.01 1 -100 -10 -1000 ID -10000 (mA) Dynamic Input Characteristic -10 (V) VGS 300 Gate-Source voltage (pF) 0.1 Drain current Ciss C Capacitance 0.3 (°C) 3000 500 1 C – VDS 5000 1000 3 Coss Crss 100 50 Common Source 30 Ta = 25°C f = 1 MHz VGS = 0 V 10 -0.1 -1 -10 Drain – Source voltage -8 -7 VDD = -10V -6 -5 -4 -3 -2 Common Source ID = -4 A Ta = 25°C -1 00 -100 VDS -9 20 40 60 Total gate charge (V) 80 Qg 100 120 (nC) t – ID IDR – VDS 1000 -8 ton 10 1 0.01 tr Common Source VDD = -10 V VGS = 0∼-2.5V Ta = 25°C RG = 4.7 Ω 0.1 Drain current Common Source VGS = 0V (A) tf Drain reverse current Switching time IDR 100 t (ns) toff 1 ID IDR G S -4 -2 0 10 D Ta = 25°C -6 0 0.2 0.4 0.6 Drain-Source voltage (A) 4 0.8 VDS 1 1.2 (V) 2007-11-01 SSM6J51TU Transient thermal impedance /W) rth (°C rth – tw 1000 Single Pulse Mounted on FR4 board 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) 100 10 1 0.001 0.01 0.1 1 Pulse width 10 tw 100 1000 (s) Safe operating area -100 Mounted on FR4 board (25.4 mm × 25.4 mm × 1.6 t 2 Cu pad: 645 mm ) Drain power dissipation 1 ms* 10 ms* ID (A) ID max (Continuous) -4 -1 10s* DC operation Ta = 25°C -0.3 -0.1 Ta = 25°C (25.4 mm × 25.4 mm × 1.6 t, 2 Cu Pad: 645 mm ) 1 t = 10 s 0.8 0.6 DC 0.4 0.2 0 0 *: Single Non-repetitive Pulse -0.03 Mounted on FR4 board PD ID max (Pulsed) * -10 Drain current PD – Ta 1.2 (W) -30 50 Ambient temperature 100 Ta 150 (°C) Curves must be derated linearly -0.01 -0.1 with increase in temperature. -0.3 -1 -3 Drain-Source voltage -10 VDS -30 -100 (V) 5 2007-11-01 SSM6J51TU RESTRICTIONS ON PRODUCT USE 20070701-EN GENERAL • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-11-01