TB7100F Toshiba BiCD Integrated Circuit Silicon Monolithic TB7100F Step-down DC-DC Converter IC The TB7100F is a single-chip step-down DC-DC converter IC. Equipped with a built-in high-speed and low on-resistance power MOSFET, and utilizing a chopper circuit, this IC can achieve a high efficiency in a wide load current range. Features • Capable of high current drive (IOUT = maximum of 700 mA), using only a few external components SON8-P-0303-0.65A(PS-8) • High efficiency (η = 90% or higher) (@VIN = 5V, VOUT = 3.3V, and IOUT = 300 mA). Weight: 0.016 g (Typ.) • Operating voltage (VIN) range: 3 to 5.5 V • Low on-resistance (RDS(ON)): 0.27 Ω (typ.) if VIN = 5 V • High oscillation frequency of 550 kHz (typ.), making it possible to use small external components. • Uses external phase compensation, assuring a high degree of design freedom in selecting external components and determining a loop response. • Employs a current mode architecture with excellent fast load response. • A small surface mount-type ceramic capacitor can be used as an output smoothing capacitor. • Housed in a small surface-mount package (PS-8) with a low thermal resistance. Pin Assignment Marking Part number COMP 1 8 FB RT 2 7 ENB PGND 3 6 VIN 7100 ※ ・The dot (•) on the top surface indicates pin 1. *: Lot number SGND 4 5 SW Due to its MOS structure, this product is sensitive to electrostatic discharge. Handle with care. 1 2004-09-10 TB7100F Block Diagram VIN (pin 6) ENB (pin 7) Reference voltage supply RT (pin 2) Oscillator Current detection 1.2 V + - Control logic Driver SW (pin 5) Temperature detection Error amplifier - FB (pin 8) + Reference voltage (0.8 V) SGND (pin 4) PGND (pin 3) COMP (pin 1) Pin Descriptions Pin No. Pin Symbol 1 COMP 2 RT 3 PGND 4 SGND Pin Description Pin for connecting an error amplifier phase compensation resistor and capacitor. Oscillation frequency setting pin for connecting a resistor to the internal oscillation circuit. Connecting 120 kΩ to this pin operates the oscillation circuit at 550 kHz (typ.). Power ground Signal ground Switching pin. A P-channel MOSFET is connected between the VIN and SW pins. 5 SW The peak switch current corresponding to the voltage that is generated at the COMP pin flows through the power MOSFET. The rating of this peak switch current is 1.0 A (min). 6 VIN 7 ENB 8 FB Input pin. This pin is placed in the standby state if VENB = low. 1 μA or lower operating current Enable pin. This pin is connected to the CMOS inverter. Applying 3.5 V or higher (@ VIN = 5 V) to this pin starts the internal circuit to perform switching control. Output voltage feedback pin. This is connected to the internal error amplifier, which is supplied with a reference voltage of 0.8 V (typ.). 2 2004-09-10 TB7100F Timing Chart OSC 0 IOUT 0 VOUT 0 VCOMP IL VSW 0 The peak switch current is determined according to the VCOMP. 0 0 TON T Overheat state operation OSC 0 Tch increase Hysteresis: 25°C (typ.) Tch VSW Low Voltage operation VIN Hysteresis: 0.1 V (typ) 0 OSC 0 VSW 0 OSC : Internal oscillator output voltage IOUT : Load current VOUT : Output voltage VCOMP : COMP pin voltage IL : Inductor current : SW pin voltage VSW VIN : Input pin voltage Tch : Channel temperature 3 2004-09-10 TB7100F Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Input voltage VIN -0.3～6 V Switch pin voltage VSW -0.3～6 V Feedback pin voltage VFB -0.3～6 V VENB -0.3～6 V VENB-VIN VENB-VIN<0.3 V Enable pin voltage Input-enable pin voltage PD 0.7 W Operating temperature Topr -40～85 ℃ Channel temperature Tch 150 °C Storage temperature Tstg -55～150 °C Power dissipation (Note 1) Thermal Resistance Characteristic Characteristics Symbol Max Unit Thermal resistance, channel and ambient Rth (ch-a) 178.6 (Note 1) °C /W (Note 1) Glass epoxy board Material : FR-4 25.4 × 25.4 × 0.8 (Unit: mm) 4 2004-09-10 TB7100F Electrical Characteristics (unless otherwise specified: Ta = 25°C and VIN = 3 to 5.5 V) Characteristics Operating supply voltage Load current Operating current Standby current Enable pin threshold voltage Symbol Test circuit Test condition VIN(OPR) － IOUT － IIN － IIN(STBY) － VIN= 5 V, VENB= 0 V, VFB = 0.9 V VIH － VIL － Min Typ. Max Unit － 3 5 5.5 V － － － 700 mA － 570 750 μA － － 1 μA VIN = 5 V 3.5 － － V VIN = 5 V － － 1.5 V VIN = 5 V, VENB = 5 V － － 20 μA μA VIN = 5 V, VENB= 5 V, VFB = 0.7 V RT = 120 kΩ Enable pin input current IIH Feedback pin current IFB － － -1 － 1 Feedback pin voltage VFB － － 0.776 0.8 0.824 Feedback pin line regulation ΔVFB(LINE) － VIN = VENB = 3 V～5 V － 1.6 5 High-side on-state resistance RDS(ON) － VIN = 5 V, VENB = 5 V, ISW = - 0.5 － 0.27 0.6 Ω High-side leakage current ILEAK － VIN = 5 V, VENB = 0 V, VSW = 0 V － － -1 μA Oscillation frequency fOSC － VIN = 5 V, VENB = 5 V, RT = 120 k － 550 － kHz gm － － 800 － μS ISW(PEAK) － － 1.0 1.5 － A Error amplifier conductance Peak switch current A Ω VIN = 5 V, VENB = 5 V ICOMP = ±20μA V mV/V Undervoltage Detection VUV － － 2.3 2.5 2.7 V protection Hysteresis ΔVUV － － － 0.1 － V Overheat Detection TSD － － 125 145 － ℃ protection Hysteresis ΔTSD － － 25 － ℃ 5 2004-09-10 TB7100F Application Circuit Example VIN=5V VIN ENB COMP CIN FB TB7100F RCOMP RT CCOMP1 RT CCOMP2 SGND SW PGND SBD GND L RFB1 VOUT=3.3V CFB RFB2 COUT GND Figure 1: TB7100F application circuit example Component constants The following values are given only for your reference and may need tuning depending on your input/output conditions and board layout. CIN: Input smoothing capacitance of 10 μF (multilayer ceramic capacitor JMK212BJ106KG, manufactured by Taiyo Yuden Co., Ltd.) COUT: Output smoothing capacitance of 10 μF (multilayer ceramic capacitor JMK212BJ106KG manufactured by Taiyo Yuden Co., Ltd.) CCOMP1: Error amplifier phase compensation capacitance of 3300 pF (@ VIN = 5 V, VOUT = 3.3 V, and RT = 120 kΩ) CCOMP2: Error amplifier phase compensation capacitance (not used if phase compensation is possible only with RCOMP and CCOMP1) CFB: Error amplifier phase compensation capacitance (not used if phase compensation is possible only with RCOMP and CCOMP1) RCOMP: Error amplifier phase compensation resistance of 1 kΩ (@ VIN = 5 V, VOUT = 3.3 V, and RT = 120 kΩ) RT: Oscillation frequency setting resistance of 120 kΩ (@ fOSC = 550 kHz) RFB1: Output voltage setting resistance of 75 kΩ (@ VIN = 5 V, VOUT = 3.3 V, and RT = 120 kΩ) RFB2: Output voltage setting resistance of 24 kΩ (@ VIN = 5 V, VOUT = 3.3 V, and RT = 120 kΩ) L: Inductor 6.8 μH (@ VIN = 5 V, VOUT = 3.3 V, and RT = 120 kΩ); CDRH4D28C/LD series, manufactured by Sumida Corporation SBD: Schottky barrier diode CRS06 (@ VRRM = 20 V and IF(AV) = 1 A), manufactured by Toshiba Corporation How to use Setting the Inductance The required inductance can be calculated by using the following equation: ⎛ ⎞ V VOUT ⋅ ⎜1 − OUT ⎟⎟ … (1) L= VIN ⎠ fOSC ⋅ ΔIL ⎜⎝ VIN: Input voltage (V) fOSC: Oscillation frequency (Hz) VOUT: Output voltage (V) ΔIL: Inductor ripple current (A) * Generally, ΔIL should be set to 30% to 40% of the peak current flowing through the inductor. For the TB7100F, set ΔIL to 0.3 A, as its peak switch current [ISW(PEAK)] is 1 A (min). Therefore select an inductor whose current rating is no lower than the peak switch current [1 A (min)] of the TB7100F. If the current rating is exceeded, the inductor becomes saturated, leading to an unstable DC-DC converter operation. If VIN = 5 V and VOUT = 3.3 V, the required inductance can be calculated as below. Be sure to select an inductor with an optimum constant by taking VIN variations into consideration. 6 2004-09-10 TB7100F ⎛ ⎞ V ⋅ ⎜⎜1 − OUT ⎟⎟ V IN ⎠ ⎝ 3.3V ⎛ 3.3 V ⎞ = ⋅ ⎜1 − ⎟ 550kHz ⋅ 300mA ⎜⎝ 5V ⎟⎠ L= VOUT fOSC ⋅ ΔIL ΔIL IL 0 T= = 6.8μH 1 fOSC ⎞ ⎛ V TOFF = T ⋅ ⎜⎜1 − OUT ⎟⎟ VIN ⎠ ⎝ Figure 2: Inductor current waveform Setting the output voltage For the TB7100F, the output voltage is set using the voltage dividing resistors RFB1 and RFB2 according to the reference voltage [0.8 V (typ.)] of the error amplifier connected to the FB pin. If the RFB1 value is extremely large, a delay can occur due to a parasitic capacitance at the FB pin. Keep the RFB1 value within approximately 100 kΩ. The output voltage can be calculated by using equation 2 below. It is recommended that a resistor with a precision of ±1% or higher be used for setting the output voltage. VOUT = VREF ⋅ (1 + = 0.8 × (1 + RFB1 ) RFB2 RFB1 ) RFB2 VOUT SW … (2) RFB1 FB RFB2 Figure 3: Output voltage setting resistors Setting the COMP pin for phase compensation The COMP pin is intended to compensate for any phase delay that may occur inside or outside the TB7100F. Phase compensation is carried out using resistors and capacitors connected to the COMP pin. The constants of the phase compensation components are selected by first specifying RCOMP and CCOMP to be, respectively, 1 kΩ and 3300 pF. However, it is necessary to measure the SW pin oscillation waveform and load response characteristics and tune the component constants, optimizing them so as to optimize the influence of your board layout and component characteristics. When tuning component constants, carefully evaluate them while taking component variations and temperature characteristics into consideration. Table 1 lists the relationships between the RCOMP and CCOMP constants. Use these as a guideline in selecting constants. RCOMP CCOMP Large Small Large Small SW pin waveform stability Decreased Increased Increased Decreased Load response characteristic Increased Decreased Decreased Increased Table 1: Relationships between RCOMP and CCOMP values Output capacitor The capacitance of the output ceramic capacitor is greatly affected by temperature. Select a product whose temperature characteristics (such as B-characteristic) are excellent. Set the capacitance to an optimum value that meets the set's ripple requirement and is not lower than 10 μF. It is more difficult to achieve phase compensation with ceramic capacitors than with tantalum electrolytic capacitors because the equivalent series resistance (ESR) of the former is much lower than that of the latter. For this reason, perform a careful evaluation when using ceramic capacitors. Miscellaneous Generally, a DC-DC converter under current mode control may fail to operate at a constant duty ratio if the duty ratio is 50% or higher. This IC incorporates slope compensation to achieve as stable an operation as possible. However, a delay in the internal circuit may prevent the IC from operating at a constant duty ratio when the duty ratio is 50% or so depending on your input/output and load conditions. 7 2004-09-10 TB7100F Board layout ENB CIN RCOMP RT CCOMP RT as solid lines, use thick wires and make them as short as possible. FB COMP VIN : For the sections shown VIN TB7100F SGND L SW PGND VOUT SBD RFB1 COUT RFB2 GND Figure 4: TB7100F board layout • For the supply voltage, output, and ground lines, which carry high current, use thick wires and make them as short as possible so as to keep their impedance low. • Place the input/output smoothing capacitors and inductor as close to the IC as possible. • For the output voltage monitoring FB line, keep the wire as short as possible to counter the effects of noise. • Design the layout to ensure that no voltage potential difference occurs between the SGND and PGND pins. Otherwise, the operation of the IC may become unstable. • It is recommended you place the components connected to the COMP and RT pins as close to the IC as possible and ground them at a single point so as stabilize the voltage at these pins. Otherwise, the operation of the IC may become unstable. • The leakage current of the SBD may increase at high temperatures, leading to a thermal runaway. Ensure, therefore, that no problem with the SBD will occur even under the worst-case conditions. A DC-DC converter using this IC is greatly affected by the characteristics of external components and the impedance of the PCB. Make sure that there is no problem with the dependency of the load current on its output voltage and load response even when any component constant deviates from the corresponding value given above for reference purposes. Also, design the DC-DC converter by selecting optimum external components and a suitable board layout so that no rating of this IC will be exceeded. Precautions • If the voltage between the input and output is low, the influence of the on-state voltage of the switch power MOSFET is greater, causing the voltage across the inductor to decrease. For this reason, it may become impossible for the required inductor current to flow, resulting in lower performance or unstable operation of the DC-DC converter. As a rough standard, keep the input-output voltage potential difference at or above 1 V, taking the on-state voltage of the power MOSFET into consideration. • The lowest output voltage that can be set is 0.8 V (typ.). • There is an antistatic diode between the ENB and VIN pins. The voltage between the ENB and VIN pins should satisfy the rating VENB - VIN < 0.3 V 8 2004-09-10 TB7100F IIN – VIN IIN – Ta 1000 800 (μA) VENB = VIN VFB = 0.7 V RT = 120 kΩ Ta = 25 °C 600 800 600 Operating current Operating current VIN = 3 V VENB = 3 V VFB = 0.7 V RT = 120 kΩ IIN IIN (μA) 1000 400 200 0 400 200 0 0 2 4 Input voltage 6 VIN 8 -80 (V ) -40 0 40 Ambient temperature IIN – Ta 80 120 Ta (°C) VIH, VIL – Ta 5 400 VIN = 5.5 V VENB = 5.5 V VFB = 0.7 V RT = 120 kΩ 200 0 -80 -40 0 40 Ambient temperature 80 120 Ta (°C ) VIH,VIL Operating current 600 VIN = 3 V 4 ENB pin threshold voltage 800 IIN (μA) (V) 1000 3 160 2 VIH 1 VIL 0 -80 -40 0 80 120 Ta (°C ) 160 IIH – VIN 20 5 (μA) VIN = 5 V VIN = 5.5 V Ta= 25°C 16 IIH 4 VIH 3 ENB pin input current (V) VIH,VIL 40 Ambient temperature VIH, VIL – Ta ENB pin threshold voltage 160 2 VIL 1 12 8 4 0 0 -80 -40 0 40 Ambient temperature 80 120 Ta (°C ) 0 160 2 4 Input voltage 9 6 VIN 8 (V ) 2004-09-10 TB7100F IIH – Ta VUV – Ta 3 20 VUV (V) 16 Undervoltage detection ENB pin input current IIH (μA) VIN = 5 V VENB= 5V 12 8 4 -80 -40 0 40 80 120 Ta (°C ) 2.4 2.2 -80 -40 0 40 Ambient temperature (μS) gm – VIN 1000 80 120 Ta (°C ) 160 gm – Ta gm 1000 800 800 Error amplifier output conductance Error amplifier output conductance Return Detection 160 gm (μS) Ambient temperature 600 400 200 ICOMP=±20μA Ta = 25 °C 0 0 2 4 Input voltage 6 VIN 8 600 400 200 VIN = 3 V ICOMP=±20μA 0 -80 (V ) -40 0 40 Ambient temperature gm – Ta 80 120 Ta (°C ) 160 RDS(ON) – VIN (Ω) 1000 RDS(ON) gm (μS) 2.6 2 0 800 0.4 ISW = - 0.5 A Ta = 25 °C 0.3 600 High-side on-resistance Error amplifier output conductance 2.8 400 200 VIN = 5 V ICOMP=±20μA 0 -80 -40 0 40 Ambient temperature 80 120 Ta (°C ) 160 0.2 0.1 0 0 2 4 Input voltage 10 6 VIN 8 (V ) 2004-09-10 TB7100F RDS(ON) – Ta (Ω) RDS(ON) VIN = 3 V 0.3 5V High-side on-resistance High-side on-resistance RDS(ON) (Ω) RDS(ON) – ISW 0.4 0.2 0.1 VENB = VIN Ta = 25 °C 0 0 -0.2 -0.4 -0.6 Switch current -0.8 ISW -1 0.6 VIN = 5 V ISW = - 0.5 A 0.5 0.4 0.3 0.2 0.1 0 -1.2 -80 -40 0 VFB – VIN 120 (°C ) 160 VFB – Ta VIN = 3 V VENB = VIN (V) (V) VENB = VIN Ta = 25 °C 0.9 VFB 0.9 VFB 0.8 Feedback pin voltage Feedback pin voltage 80 Ta 1 1 0.7 0.6 0.5 0.8 0.7 0.6 0.5 0 2 4 Input voltage 6 VIN 8 -80 (V ) -40 0 40 Ambient temperature 80 120 Ta (°C ) 160 fOSC – VIN VFB – Ta 1 1000 (V) (kHz) VIN = 5 V VENB = VIN RT = 120 kΩ Ta = 25 °C 800 fOSC VFB 0.9 600 0.8 Oscillation frequency Feedback pin voltage 40 Ambient temperature (A ) 0.7 0.6 400 200 0 0.5 -80 -40 0 40 Ambient temperature 80 120 Ta (°C ) 0 160 11 2 4 6 8 2004-09-10 TB7100F fOSC – Ta fOSC – RT 10000 VIN = 5V VENB = 5V Ta = 25 °C (kHz) VIN = 5 V VENB = 5 V fOSC 800 fOSC (kHz) 1000 Oscillation frequency Oscillation frequency 600 400 200 0 1000 100 -80 -40 0 40 Ambient temperature 80 120 Ta (°C ) 10 160 100 VOUT – IOUT (V) Output voltage Output voltage 1.5 1.4 1.3 0.001 0.1 0.01 Load current 1.6 VOUT 1.6 IOUT 1.5 1.4 1.3 0.001 1 (A) (V) VOUT 1.9 1.7 0.01 Load current IOUT 1 (A) VOUT – IOUT 2.0 VIN = 3.3 V VOUT = 1.8 V fOSC = 550 kHz L = 4.7 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C 1.6 0.001 0.1 0.01 Load current Output voltage (V) Output voltage VOUT 1.9 (kΩ ) VIN = 5 V VOUT = 1.5 V fOSC = 550 kHz L = 6.8 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C VOUT – IOUT 2.0 RT VOUT – IOUT 1.7 VIN = 3.3 V VOUT = 1.5 V fOSC = 550 kHz L = 4.7 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C VOUT (V) 1.7 1000 Oscillation frequency setting resistance 0.1 IOUT VIN = 5 V VOUT = 1.8 V fOSC = 550 kHz L = 6.8 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C 1.8 1.7 1.6 0.001 1 (A) 0.1 Load current 12 IOUT 1 (A) 2004-09-10 TB7100F VOUT – IOUT VOUT – IOUT 3.5 Output voltage (V) VIN = 5 V VOUT = 2.5 V fOSC = 550 kHz L = 6.8 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C VOUT 3.4 Output voltage 2.6 VOUT (V) 2.7 2.5 2.4 2.3 0.001 0.01 Load current IOUT 3.3 3.2 3.1 0.001 1 0.1 VIN = 5 V VOUT = 3.3 V fOSC = 550 kHz L = 6.8 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C (A) 0.01 Load current 100 80 80 (%) η 60 VIN = 3.3 V VOUT = 1.5 V fOSC = 550 kHz L = 4.7 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C 40 0 0.001 Efficiency η Efficiency (A) (%) 100 20 0.01 0.1 Load current IOUT 60 VIN = 5 V VOUT = 1.5 V fOSC = 550 kHz L = 6.8 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C 40 20 0 0.001 1 (A) 0.01 0.1 Load current η – IOUT IOUT 1 (A) η – IOUT 100 80 80 (%) 100 (%) η 60 VIN = 3.3 V VOUT = 1.8 V fOSC = 550 kHz L = 4.7 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C 40 20 0 0.001 Efficiency η IOUT 1 η – IOUT η – IOUT Efficiency 0.1 0.01 Load current 0.1 IOUT 60 VIN = 5 V VOUT = 1.8 V fOSC = 550 kHz L = 6.8 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C 40 20 0 0.001 1 (A) 0.1 Load current 13 IOUT 1 (A) 2004-09-10 TB7100F η – IOUT η – IOUT 80 80 η 60 VIN = 5 V VOUT = 2.5 V fOSC = 550 kHz L = 6.8 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C 40 20 0 0.001 0.1 0.01 Load current IOUT Efficiency η Efficiency (%) 100 (%) 100 60 20 0 0.001 1 (A) VIN = 5 V VOUT = 3.3 V fOSC = 550 kHz L = 6.8 μH RCOMP = 1 kΩ CCOMP = 3300pF Ta = 25°C 40 0.01 Load current 0.1 IOUT 1 (A) PD – Ta 25.4×25.4×0.8mm Refer to Note 1 for the pattern when mounted on a glass epoxy board. 0.8 Power dissipation PD (W) 1 0.6 0.4 0.2 0 0 40 80 Ambient temperature 120 Ta 160 (°C ) 14 2004-09-10 TB7100F Package dimensions SON8-P-0303-0.65A Unit: mm 8 5 1 4 0.33 ± 0.05 0.05 M A 2.8 ± 0.1 2.4 ± 0.1 0.1 max 0.17 ± 0.02 B 0.05 M B 0.475 0.65 2.9 ± 0.1 0.025 S 1.12 +0.13 - 0.12 0.28 +0.1 - 0.11 S 1.12 0.8 ± 0.05 +0.13 - 0.12 0.28 +0.1 - 0.11 A Weight: 0.016 g (Typ.) 15 2004-09-10 TB7100F 16 2004-09-10 TB7100F RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 17 2004-09-10