TOSHIBA TLP1243

TLP1243(C8)
TOSHIBA Photo-interrupter
Infrared LED + Phototransistor
TLP1243(C8)
Copiers, Printers and Fax Machines
Air-conditioners
Game Machines
The TLP1243 (C8) is a compact photointerrupter with a
built-in connector that uses a GaAs infrared LED and an Si
phototransistor.
•
Small package
Compared to Toshiba’s TLP1241 (C5), the volume and the
mounting area of the TLP1243 (C8) are reduced to
approximately 70% and 75% respectively.
•
Three board thicknesses supported: 1.0 mm, 1.2 mm and
1.6 mm
•
Gap: 5 mm
•
Resolution: Slit width = 0.7 mm
•
High-temperature operation: Topr = 95°C (max)
•
Current transfer ratio: IC/IF = 2.5% (min)
•
Mini CT connector (1.5-mm pitch, receptacle
assembly/housing crimp type) made by Tyco Electronics
AMP, Ltd.
•
Package and connector material: Polycarbonate (UL94V-2)
•
Lead(Pb)-Free
TOSHIBA
11-15G1
Weight: 0.8 g (typ.)
Marking
43 8
Connector classification
Monthly lot number
Month of manufacture
(January to December, denoted by the letters A to L respectively)
Year of manufacture (the last digit of the calendar year)
Product No.
1
2007-10-01
TLP1243(C8)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
IF
30
mA
ΔIF/°C
−0.28
mA/°C
VR
5
V
Collector-emitter voltage
VCEO
35
V
Emitter-collector voltage
VECO
5
V
PC
75
mW
ΔPC/°C
−1
mW/°C
IC
50
mA
Operating temperature range
Topr
−30 to 95
°C
Storage temperature range
Tstg
−40 to 100
°C
LED
Forward current
Forward current derating
(Ta>25°C)
Detector
Reverse voltage
Collector power dissipation
Collector power dissipation
derating
(Ta>25℃)
Collector current
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Optical and Electrical Characteristics (Ta = 25°C)
Detector
LED
Characteristics
Test conditions
Min
Typ.
Max
Unit
1.00
1.18
1.40
V
Forward voltage
VF
IF = 10 mA
Reverse current
IR
VR = 5 V
⎯
⎯
10
μA
Peak emission wavelength
λP
IF = 10 mA
⎯
940
⎯
nm
VCE = 24 V, IF = 0
⎯
0.001
0.1
μA
⎯
870
⎯
nm
VCE = 2 V, IF = 10 mA
2.5
⎯
100
%
IF = 20 mA, IC = 0.25 mA
⎯
0.1
0.35
V
⎯
15
50
⎯
15
50
Dark current
Peak sensitivity wavelength
Current transfer ratio
Coupled
Symbol
Collector-emitter saturation
voltage
ID (ICEO)
⎯
λP
IC/IF
VCE (sat)
Rise time
tr
Fall time
tf
VCE = 5 V, IC = 1 mA, RL = 1 kΩ
2
μs
2007-10-01
TLP1243(C8)
Recommended Connector
Mini CT connector (1.5-mm pitch, receptacle assembly/housing crimp type) made by
Tyco Electronics AMP, Ltd.
Type
Model Number
Receptacle
assembly
353293-3
Housing crimp type
353908-3
Housing-Terminal
En Block Type
Note:
Terminal Material
AWG Size
External Diameter of
Insulation Coating
Phosphor bronze
AWG26 to 28
0.85 mm to 0.95 mm
For further details of connector characteristics, please contact the relevant connector manufacturer.
Precautions
•
Protect the device from ambient light interference. The integrated phototransistor is insensitive to light below
700 nm (e.g., fluorescent light), but is sensitive to light above 700 nm (e.g., incandescent light). If it detects
ambient light, it may cause malfunction. Be sure to make a thorough evaluation of the equipment in which the
device is to be used.
•
Care must be taken regarding the environment in which the device is to be installed. Oil or chemicals may
cause the package to melt or crack.
•
When attaching the device to the metal board, always hold the body of the device. Do not hold the device by the
connector. Ensure that the board is flat, and not warped or twisted. Attach the device to the metal board at
room temperature.
•
Toshiba recommends attaching the device to the smoother side of the board.
•
Toshiba recommends testing the attachment strength beforehand by actually attaching a device to the board.
•
Do not apply solder to the pins of the device's connector. Make sure that the connector is plugged into the Mini
CT connector or equivalent connector.
•
When inserting or removing the Mini CT connector or equivalent connector, always grasp it and its cable firmly
and either plug it straight into or pull it straight out of the device's connector. If the Mini CT connector or
equivalent connector is inserted or removed at an angle, both the device's connector and the Mini CT connector
or equivalent connector may get damaged, resulting in an unreliable connection.
•
Conversion efficiency decreases over time due to current flow in the infrared LED. When designing a circuit,
take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion efficiency
to fluctuation in infrared LED optical output is 1:1:
•
IC/IF (t) Po (t) .
=
IC/IF (0) Po (0)
The leadframe of the package is exposed as shown below. Ensure that no conductive material or object (such as
a metal pin) comes into contact with the leads of the leadframe and shorts them together. Care must be taken
when designing a chassis.
Top View
Connector
(1)
(2)
Leads (1) to (5) of the leadframe shown
on the left must not be shorted together.
(3)
(4)
(5)
3
2007-10-01
TLP1243(C8)
Package Dimensions:
Unit: mm
TOSHIBA 11-15G1
Tolerances are listed below unless
otherwise specified.
Dimensions
Tolerance
6 mm or less
±0.1
Greater than 6 mm
±0.2
Weight: 0.8 g (typ.)
Pin Connection
3. Anode
1. Collector
2. Cathode, Emitter
4
2007-10-01
TLP1243(C8)
IF – Ta
PC – Ta
80
Allowable collector power dissipation
PC (mW)
Allowable forward current
IF (mA)
40
30
20
10
0
0
20
40
60
80
60
40
20
0
0
100
20
Ambient temperature Ta (°C)
IF – V F
(typ.)
80
IC/IF – IF
(typ.)
30
25
50
0
IC/IF (%)
30
−25
Current transfer ratio
Ta = 75°C
10
5
3
Sample 2
10
5
Sample 1
3
Ta = 25°C
: VCE = 2 V
1
1
0.9
1.0
1.1
1.2
1.3
Forward voltage VF
1.4
: VCE = 0.4 V
1.5
0.5
1
(V)
3
5
10
Forward current IF
IC – IF
(typ.)
100
(mA)
(typ.)
Ta = 25°C
20
5
(mA)
Sample 2
1
Collector current IC
(mA)
Collector current IC
50
6
5
0.5
0.3
Sample 1
0.1
0.05
0.03
Ta = 25°C
4
15
3
10
2
IF = 5 mA
1
: VCE = 2 V
0.01
0.005
1
30
IC –VCE
10
3
100
50
50
(mA)
60
Ambient temperature Ta (°C)
100
Forward current IF
40
: VCE = 0.4 V
3
5
10
Forward current IF
30
50
0
0
100
(mA)
2
4
6
Collector-emitter voltage
5
8
10
12
VCE (V)
2007-10-01
TLP1243(C8)
Relative IC – Ta
ID (ICEO) – Ta
(typ.)
1.2
(typ.)
10
(μA)
VCE = 24 V
Dark current ID (ICEO)
Relative collector current
1.0
0.8
0.6
VCE = 2 V
0.4
: IF = 20 mA
1
0.1
0.01
: IF = 10 mA
0.2
−40
: IF = 5 mA
−20
0
20
40
60
80
0.001
0
100
20
60
80
100
120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
VCE (sat) – Ta
40
(typ.)
Switching Time Test Circuit
Collector-emitter saturation voltage
VCE (sat) (V)
IC = 0.25 mA
IF
IF = 20 mA
0.16
RL
0.20
VCC
IF
VOUT
90%
VOUT
0.12
td
tr
tf
10%
ts
0.08
0.04
0.0
−40
−20
0
20
40
60
80
100
Ambient temperature Ta (°C)
6
2007-10-01
TLP1243(C8)
Switching characteristics
(non-saturated operation)
100
Switching characteristics
(saturated operation)
(typ.)
3000
Ta = 25°C
VCC = 5 V
1000
30
tf
VCC = 5 V
VOUT ≥ 4.65 V
300
td
Switching time (μs)
Switching time (μs)
Ta = 25°C
IF = 20 mA
tr, tf
VOUT = 1 V
(typ.)
10
ts
3
ts
100
tr
30
10
1
td
3
1
0.3
0.1
0.3
1
3
Load resistance RL
30
100
300
(kΩ)
Detection position
characteristics (2)
(typ.)
1.2
(typ.)
1.2
IF = 10 mA
VCE = 2 V
Ta = 25°C
−
1
+
0
Relative collector current
1
Relative collector current
10
Load resistance RL
(kΩ)
Detection position
characteristics (1)
d
0.8
Shutter
0.6
Detection position
d = 0 ± 0.4 mm
0.4
0.2
0
−3
3
10
IF = 10 mA
VCE = 2 V
Ta = 25°C
0.8
Shutter
0.6
d
0.4
1.2 mm Metal
board thickness
Detection position
+ 1.9
d = 9.6 − 0.9 mm
0.2
−2
−1
0
Distance
1
2
3
0
7
4
d (mm)
8
9
10
Distance
7
11
12
13
14
d (mm)
2007-10-01
TLP1243(C8)
Relative Positioning of Shutter and Device
For normal operation, position the shutter and the device as shown in the figure below. By considering the
device’s detection direction characteristic and switching time, determine the shutter slit width and pitch.
Shutter
A
a
Center of sensor
b
A’
Metal board
Cross section between A and A'
Unit: mm
Thickness of Metal Board
a Dimension
b Dimension
1.0
11.7 min
8.9 max
1.2
11.5 min
8.7 max
1.6
11.1 min
8.3 max
Recommended Size of Connection Holes (Unit: mm)
1.6-mm thick metal board
6.4 ± 0.1
15.3 ± 0.1
5.2 ± 0.1
15.3 ± 0.1
15.3 ± 0.1
6.65 ± 0.1
6.4 ± 0.1
6.65 ± 0.1
5.2 ± 0.1
1.2-mm thick metal board
3.1 ± 0.1
6.65 ± 0.1
3.1 ± 0.1
1.0-mm thick metal board
8
2007-10-01
TLP1243(C8)
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
9
2007-10-01