TLP705 TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP705 Plasma Display Panel. Industrial Inverter IGBT/Power MOS FET Gate Drive Unit in mm 4.58±0.25 1.27±0.2 • Peak output current : ±0.45 A (max) • Operating frequency : 250kHz (max) • Guaranteed performance over temperature : −40 to 100°C Supply current : 3mA (max) • Power supply voltage : 10 to 20 V • Threshold input current : IFLH = 8 mA (max) • Switching time (tpLH / tpHL) : 200 ns (max) • Common mode transient immunity :±10 kV/μs(min) • Isolation voltage : 5000 Vrms(min) • UL Recognized :UL1577, File No.E67349 • Construction Mechanical Rating Creepage Distance Clearance Insulation Thickness • +0.25 1.25±0.25 0.4±0.1 9.7±0.3 11-5J1 TOSHIBA • 4.0 −0.20 7.62±0.25 −0.05 1 2 3 0.25± +0.10 TLP705 consists of a GaAℓAs light emitting diode and a integrated photodetector. This unit is 6-lead SDIP package. TLP705 is 50% smaller than 8pin DIP and has suited the safety standard reinforced insulation class. So mounting area in safety standard required equipment can be reduced. TLP705 is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP705 is capable of “direct” gate drive of lower Power IGBTs. 3.65 +0.15 −0.25 6.8±0.25 6 5 4 11-5J1 Weight:0.26 g (t yp .) Pin Configuration (Top View) 7.62-mm pitch standard type 10.16-mm pitch TLPXXXF type 1 6 7.0 mm (min) 7.0 mm (min) 0.4 mm (min) 8.0 mm (min) 8.0 mm (min) 0.4 mm (min) 2 5 Option (D4) TÜV approved Maximum operating insulation voltage Highest permissible over voltage : EN60747-5-2 Certificate No. R50033433 : 890 Vpk : 8000 Vpk 3 1: ANODE 2: NC 3: CATHODE 4: GND 5: VO ( OUTPUT ) 6: VCC SHIELD ( Note ) When a EN60747-5-2 approved type is needed, please designate the “Option(D4)” Schematic Truth Table Input LED Tr1 Tr2 Output H ON ON OFF H 1+ L OFF OFF ON L VF 3− ICC 6 (Tr1) VCC IF (Tr2) SHIELD IO 5 VO 4 GND A 0.1 μF bypass capacitor must be connected between pins 6 and 4. (See Note 6.) 1 2007-10-01 TLP705 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit IF 20 mA ΔIF/ΔTa −0.54 mA/°C IFP 1 A Forward current LED Forward current derating (Ta ≥ 85°C) Peak transient forward current (Note 1) Reverse voltage VR 5 V Junction temperature Tj 125 °C (Note 2) IOPH −0.45 A “L” peak output current (Note 2) IOPL 0.45 A Output voltage VO 25 V Supply voltage VCC 25 V Tj 125 °C f 250 kHz Storage temperature range Tstg −55 to 125 °C Operating temperature range Topr −40 to 100 °C Detector “H” peak output current Junction temperature Operating frequency (Note 3) Lead soldering temperature (10 s) (Note 4) Tsol 260 °C Isolation voltage (AC, 1 minute, R.H. ≤ 60%) (Note 5) BVS 5000 Vr m s Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width PW ≤ 1μs, 300 pps Note 2: Exponential waveform pulse width PW ≤ 10 μs , f ≤15 kHz Note 3: Exponential waveform IOPH ≤-0.25 A (≤80 ns) , IOPL ≤+0.25 A (≤80 ns) ,Ta =100 °C Note 4: It is effective soldering area of Lead . Note 5: Device considered a two terminal device: pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted together. Note 6: A ceramic capacitor(0.1 μF) should be connected from pin 6 to pin 4 to stabilize the operation of the high gain linear amplifier. Failure to provide the bypassing may impair the switching property. The total lead length between capacitor and coupler should not exceed 1 cm. Recommended Operating Conditions Characteristics Input current, ON Input voltage, OFF Supply voltage Peak output current Operating temperature (Note 7) Symbol Min Typ. Max Unit IF (ON) 10 ⎯ 15 mA VF (OFF) 0 ⎯ 0.8 V VCC 10 ⎯ 20 V IOPH / IOPL ⎯ ⎯ ± 0.15 A Topr - 40 ⎯ 100 °C Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. Note 7: Input signal rise time (fall time) < 0.5 μs. Note 8: If the rising slope of the supply voltage (VCC) for the detector is steep, stable operation of the internal circuits cannot be guaranteed. Be sure to set 3.0V/μs or less for a rising slope of the VCC. 2 2007-10-01 TLP705 Electrical Characteristics (Ta = −40 to 100°C, unless otherwise specified) Symbol Test Circuit VF ⎯ ∆VF/∆Ta Input reverse current Input capacitance Characteristics Forward voltage Temperature coefficient of forward voltage “H” Level Output current (Note 9) “L” Level “H” Level Min Typ.* Max Unit IF = 10 mA, Ta = 25°C ⎯ 1.6 1.8 V ⎯ IF = 10 mA ⎯ −2.0 ⎯ mV/°C IR ⎯ VR = 5 V, Ta = 25°C ⎯ ⎯ 10 μA CT ⎯ V = 0 V , f = 1 MHz,Ta = 25°C ⎯ 45 ⎯ pF 1 VCC = 15 V IF = 10 mA V6-5 = 4 V −0.15 −0.35 ⎯ V6-5 = 10 V −0.3 −0.6 ⎯ 2 VCC = 15 V IF = 0 mA V5-4 = 2 V 0.15 0.36 ⎯ IOPH1 IOPH2 IOPL1 IOPL2 VOH Test Condition 3 VCC = 10 V Output voltage V5-4 = 10 V 0.3 0.62 ⎯ IO = −100 mA, IF = 10 mA 6.0 8.5 ⎯ IO = 100 mA, VF = 0.8 V ⎯ 0.4 1.0 ⎯ 2.0 3.0 ⎯ 2.0 3.0 A V “L” Level VOL 4 “H” Level ICCH 5 “L” Level ICCL 6 VCC = 10 to 20 V IF = 10 mA VO open IF = 0 mA Threshold input current L→H IFLH ⎯ VCC = 15 V, VO > 1 V ⎯ 2.5 8 mA Threshold input voltage H→L VFHL ⎯ VCC = 15 V, VO < 1 V 0.8 ⎯ ⎯ V VCC ⎯ 10 ⎯ 20 V Supply current Supply voltage ⎯ mA *: All typical values are at Ta = 25°C Note 9: Duration of IO time ≤ 50 μs Note10: This product is more sensitive than the conventional product to static electricity (ESD) because of a lowest power consumption design. General precaution to static electricity (ESD) is necessary for handling this component. Isolation Characteristics (Ta = 25°C) Characteristic Symbol Capacitance input to output CS Isolation resistance RS Test Condition V = 0 V, f = 1MHz R.H. ≤ 60%,VS = 500V AC, 1 minute Isolation voltage BVS (Note 5) (Note 5) Min. Typ. Max. Unit ― 1.0 ― pF ― Ω 1×10 12 10 14 5000 ― ― AC, 1 second, in oil ― 10000 ― DC,1 minute,in oil ― 10000 ― 3 Vrms Vdc 2007-10-01 TLP705 Switching Characteristics (Ta = −40 to 100°C, unless otherwise specified) Characteristics Symbol L→H tpLH H→L tpHL L→H tpLH H→L tpHL (Note11) tpsk Test Circuit Test Condition Propagation delay time Propagation delay time 7 Propagation delay skew Switching time dispersion VCC = 20 V Rg = 30 Ω Cg = 1 nF f=250kHz Duty Cycle =50% IF = 10→0 mA Ta= -40 to100℃ IF = 10 mA Ta= -40 to100℃ |tpHL-tpLH| between ON and OFF Ta= 25℃ IF = 0→10 mA Ta= 25 ℃ IF = 10→ 0 mA Ta= -40 to100℃ IF = 0→10 mA Ta= -40 to100℃ IF = 10 mA Min Typ.* Max 70 95 170 70 105 170 50 ⎯ 200 50 ⎯ 200 -90 ⎯ 90 -65 ⎯ 65 ns Output rise time (10-90%) tr IF = 0 → 10 mA ⎯ ⎯ ⎯ Output fall time (90-10%) tf IF = 10 → 0 mA ⎯ ⎯ ⎯ IF = 10 mA VO (min) = 16 V −10000 ⎯ ⎯ IF = 0 mA VO (max) = 1 V 10000 ⎯ ⎯ Common mode transient immunity at high level output CMH Common mode transient immunity at low level output CML VCM = 8 1000Vp-p VCC = 20 V Ta = 25°C Unit V/μs *: All typical values are at Ta = 25°C Note 11: Propagation delay difference between any two parts. Test Circuit 1: IOPH 1 Test Circuit 2: IOPL 1 6 6 IOPL V6-5 A IF IOPH A VCC 3 VCC 4 3 Test Circuit 3: VOH 1 6 V5-4 4 Test Circuit 4: VOL 1 VOH V 6 VF IF VOL VCC 3 3 4 Test Circuit 5: ICCH 1 VCC V 4 Test Circuit 6: ICCL 6 1 ICCH 6 A ICCL A VCC IF VCC 3 3 4 4 4 2007-10-01 TLP705 Test Circuit 7 : tpLH, tpHL, tr, tf, PWD 6 1 0.1 μF IF ( f=250 kHz , Duty=50 %) VO Rg = 30 Ω Cg = 1 nF 3 IF tr VOH tf VCC 90% 50% 10% VO 4 tpHL tpLH 1: ANOD Test Circuit 8: CMH, CML IF 6 1 VCM SW A 0.1 μF VO B 1000 V 90% 10% tf tr VCC • SW A: IF = 10 mA 4 3 VCM + VO − 1V • SW B: IF = 0 mA CML = CMH 16V CML 800 V tr (μs) CMH =- 800 V tf (μs) CML (CMH) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output voltage in the low (high) state. 5 2007-10-01 TLP705 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2007-10-01