ES3A - ES3J 3.0 AMPS. Surface Mount Super Fast Rectifiers SMC/DO-214AB .126(3.20) .114(2.90) .245(6.22) .220(5.59) Features Glass passivated junction chip For surface mounted applications Low profile package Built-in strain relief Ideal for automated placement Easy pick and place Super fast recovery time for high efficiency Glass passivated chip junction High temperature soldering: 260oC/10 seconds at terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 .280(7.11) .260(6.60) .012(.31) .006(.15) .103(2.62) .079(2.00) .061(1.56) .050(1.26) .008(.20) .004(.10) .063(1.6) .039(1.0) .320(8.13) .305(7.75) Mechanical Data Cases: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band Packaging: 16mm tape per EIA STD RS-481 Weight: 0.21 gram Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol ES ES ES ES Type Number 3A 3B 3C ES 3F 3D ES 3G ES 3H ES 3J Units Maximum Recurrent Peak Reverse Voltage VRRM 50 Maximum RMS Voltage VRMS 35 70 105 140 210 280 350 420 V VDC 50 100 150 200 300 400 500 600 V Maximum DC Blocking Voltage Maximum Average Forward Rectified Current See Fig. 1 Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) @TL = 100 oC Maximum Instantaneous Forward Voltage @ 3.0A Maximum DC Reverse Current @ TA =25 oC at Rated DC Blocking Voltage @ TA=100 oC Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Typical Thermal Resistance (Note 3) Operating Temperature Range V I(AV) 3.0 A IFSM 100 A 0.95 VF 1.3 1.7 V 10 500 35 IR Trr Cj RθJA RθJL 45 TJ TSTG 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A 2. Measured at 1 MHz and Applied VR=4.0 Volts 3. Units Mounted on P.C.B. with 0.6” x 0.6”(16mm x 16mm) Copper Pad Areas - 184 - uA uA nS pF 30 47 12 -55 to +150 -55 to +150 Storage Temperature Range Notes: 100 150 200 300 400 500 600 o C /W o o C C Version: B07 FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 150 3 PEAK FORWARD SURGE CURRENT. (A) AVERAGE FORWARD CURRENT. (A) RATINGS AND CHARACTERISTIC CURVES (ES3A THRU ES3J) RESISTIVE OR INDUCTIVE LOAD 100 1 P.C.B. MOUNTED ON 0.6X0.6"(16X16mm) COPPER PADS 75 50 25 0 0 80 90 100 110 120 130 o LEAD TEMPERATURE. ( C) 140 150 100 10 1 NUMBER OF CYCLES AT 60Hz FIG.3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 8.3ms Single Half Sine Wave o (JEDEC Method) at TL=120 C 125 2 FIG.4- TYPICAL REVERSE CHARACTERISTICS 1000 -G 3F S E E S 3H -J 1 0.1 0.01 0.4 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE. (V) 1.6 75 60 45 ES3 F-J A- D 15 0 1 10 Tj=75 0C 1 Tj=25 0C 0.1 100 Tj=25 0C f=1.0MHz Vsig=50mVp-p 90 ES3 Tj=100 0C 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FIG.5- TYPICAL JUNCTION CAPACITANCE 30 100 0.01 0 1.8 TRANSIENT THERMAL IMPEDANCE ( OC/W) 105 JUNCTION CAPACITANCE.(pF) INSTANTANEOUS REVERSE CURRENT. ( A) -D 10 ES 3A INSTANTANEOUS FORWARD CURRENT. (A) 0 Tj=25 C PULSE WIDTH-300 S 1% DUTY CYCLE 10 REVERSE VOLTAGE. (V) 100 FIG.6- TYPICAL TRANSIENT THERMAL IMPEDANCE 10 1 0.1 0.01 0.1 1 T, HEATING TIME (sec.) 10 100 FIG.7- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50W NONINDUCTIVE 10W NONINDUCTIVE trr +0.5A (-) DUT (+) 50Vdc (approx) (-) PULSE GENERATOR (NOTE 2) 1W NON INDUCTIVE OSCILLOSCOPE (NOTE 1) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms 0 -0.25A (+) -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: B07