HERA801G - HERA808G 8.0 AMPS. Glass Passivated High Efficient Rectifiers TO-220AC .185(4.70) .175(4.44) .412(10.5) MAX Features .113(2.87) .103(2.62) Glass passivated chip junction. High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application. .27(6.86) .23(5.84) .594(15.1) .587(14.9) PIN1 2 .16(4.06) .14(3.56) .11(2.79) .10(2.54) .56(14.22) .53(13.46) .037(0.94) .027(0.68) Mechanical Data .055(1.40) .045(1.14) DIA .154(3.91) .148(3.74) Cases: TO-220AC Molded plastic Epoxy: UL 94V0 rate flame retardant Terminals: Pure tin plated, lead free solderable per MIL-STD-202, Method 208 guaranteed Polarity: As marked High temperature soldering guaranteed: 260 oC/10 seconds .16”,(4.06mm) from case. Weight: 2.24 grams .025(0.64) .014(0.35) .205(5.20) .195(4.95) PIN 1 PIN 2 CASE Dimensions in inches and (millimeters) Maximum Rating and Electrical Characteristics Rating at 25 oC ambient temperature unless otherwise specified. Single phase, half wave 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current .375”(9.5mm) Lead Length o @T C =100 C Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage @8.0A Maximum DC Reverse Current @T A =25 oC at Rated DC Blocking Voltage o @ T A =125 C V RRM V RMS V DC 200 140 200 300 210 300 400 280 400 600 420 600 800 1000 560 700 800 1000 V V V A IFSM 150 A VF 1.0 1.3 Cj 1.7 V 80 55 uA uA nS pF 10 400 IR Trr Operating Temperature Range 100 70 100 8.0 Typical Junction Capacitance Typical Thermal Resistance (Note 3) 50 35 50 Units I(AV) Maximum Reverse Recovery Time ( Note 1 ) ( Note 2 ) HERA HERA HERA HERA HERA HERA HERA HERA 801G 802G 803G 804G 805G 806G 807G 808G 50 65 R θJC 2.0 TJ -65 to +150 -65 to +150 Storage Temperature Range T STG 1. Reverse Recovery Test Conditions: IF =0.5A, IR =1.0A, IRR =0.25A Notes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. 3. Mounted on Heatsink Size of 2 in x 3 in x 0.25 in Al-Plate. o C/W o o C C Version: A06 RATINGS AND CHARACTERISTIC CURVES (HERA801G THRU HERA808G) FIG.2- TYPICAL REVERSE CHARACTERISTICS 1000 16 12 8 4 0 0 50 100 150 o FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 150 8.3ms Single Half Sine Wave JEDEC Method 120 Tj=75 0C 10 1 Tj=25 0C 0.1 0 20 40 60 80 100 120 140 90 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) 60 FIG.5- TYPICAL FORWARD CHARACTERISTICS 100 30 0 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz FIG.4- TYPICAL JUNCTION CAPACITANCE 180 150 CAPACITANCE.(pF) Tj=125 0C 100 120 90 HE RA 80 1G ~H ER 60 HER A8 A8 05 06 G G~ HE 30 RA 80 8G 0 1 2 5 10 20 30 HE RA 80 1G ~H ER A8 04 G PEAK FORWARD SURGE CURRENT. (A) CASE TEMPERATURE. ( C) INSTANTANEOUS REVERSE CURRENT. ( A) 20 INSTANTANEOUS FORWARD CURRENT. (A) AVERAGE FORWARD CURRENT. (A) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 10 3 1 R HE A8 05 G RA 8G 80 HE 80 RA ~ 6G HE 0.3 0.1 0.03 50 100 200 500 1000 0.01 0.4 REVERSE VOLTAGE. (V) 0.6 0.8 1.0 1.2 1.4 FORWARD VOLTAGE. (V) 1.6 1.8 FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 50 NONINDUCTIVE 10 NONINDUCTIVE trr +0.5A (+) 50Vdc (approx) (-) (-) DUT PULSE GENERATOR (NOTE 2) NON INDUCTIVE OSCILLOSCOPE (NOTE 1) NOTES: 1. Rise Time=7ns max. Input Impedance= 1 megohm 22pf 2. Rise Time=10ns max. Sourse Impedance= 50 ohms 0 -0.25A (+) -1.0A 1cm SET TIME BASE FOR 5/ 10ns/ cm Version: A06