TSC MBR10H150CT

MBR10H100CT - MBR10H200CT
Pb
RoHS
10.0 AMPS. Schottky Barrier Rectifiers
COMPLIANCE
TO-220AB
Features
—
—
—
—
—
—
—
—
Plastic material used carries Underwriters
Laboratory Classifications 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in power supply – output rectification, power
management, instrumentation
Guardring for overvoltage protection
High temperature soldering guaranteed:
o
260 C/10 seconds,0.25”(6.35mm)from case
Mechanical Data
—
—
—
—
—
—
Cases: JEDEC TO-220AB molded plastic body
Terminals: Pure tin plated, lead free. solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 5 in. - lbs. max
Weight: 0.08 ounce, 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR
Type Number
Symbol 10H100CT
Maximum Recurrent Peak Reverse Voltage
VRRM
100
Maximum RMS Voltage
VRMS
70
Maximum DC Blocking Voltage
VDC
100
Maximum Average Forward Rectified Current
O
at Tc=125 C
Peak Repetitive Forward Current (Rated VR,
o
Square Wave, 20KHz) at Tc=125 C
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load (JEDEC
method )
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage at:
o
(Note 2)
IF=5A, TC=25 C
o
IF=5A, TC=125 C
o
IF=10A, TC=25 C
o
IF=10A, TC=125 C
Maximum Instantaneous Reverse Current
o
@ Tc =25 C at Rated DC Blocking Voltage
o
(Note 2)
@ Tc=125 C
Voltage Rate of Change (Rated VR)
Maximum Typical Thermal Resistance (Note 3)
MBR
10H150CT
150
105
150
MBR
10H200CT
200
140
200
Units
V
V
V
I(AV)
10
A
IFRM
32
A
IFSM
120
A
IRRM
VF
IR
dV/dt
RθJC
1.0
A
0.5
0.88
0.75
0.97
0.85
0.75
0.95
0.85
V
0.85
5
uA
mA
1.0
10,000
V/uS
o
1.5
C/W
o
Operating Junction Temperature Range
-65 to +175
TJ
C
o
Storage Temperature Range
-65 to +175
TSTG
C
Notes:
1. 2.0us Pulse Width, f=1.0 KHz
2. Pulse Test: 300us Pulse Width, 1% Duty Cycle
3. Thermal Resistance from Junction to Case Per Leg, Mount on Heatsink Size of 2 in x 3 in x 0.25in
Al-Plate.
Version: A07
RATINGS AND CHARACTERISTIC CURVES (MBR10H100CT THRU MBR10H200CT)
FIG.1- FORWARD CURRENT DERATING CURVE
FIG.2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
180
RESISTIVE OR
INDUCTIVE LOAD
PEAK FORWARD SURGE CURRENT. (A)
AVERAGE FORWARD CURRENT. (A)
12
10
8
6
4
2
Tj=Tj max.
8.3ms Single Half Sine-Wave
JEDEC Method
150
120
90
60
30
0
0
0
25
50
75
100
125
o
CASE TEMPERATURE. ( C)
150
1
175
FIG.3- TYPICAL FORWARD CHARACTERISTICS
100
10
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL REVERSE CHARACTERISTICS
5
Tj=25oC
Pulse Width=300 s
1% Duty Cycle
1
INSTANTANEOUS REVERSE CURRENT. (mA)
INSTANTANEOUS FORWARD CURRENT. (A)
100
0
Tj=125 C
10
Tj=25 0C
5
1
Tj=125 0C
0.1
Tj=75 0C
0.01
0.001
Tj=25 0C
0.1
0.0001
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
FORWARD VOLTAGE. (V)
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS PER LEG
FIG.5- TYPICAL JUNCTION CAPACITANCE
TRANSIENT THERMAL IMPEDANCE. ( OC/W)
JUNCTION CAPACITANCE.(pF)
5,000
Tj=25 0C
f=1.0MHz
Vsig=50mVp-p
1,000
500
100
0.1
1.0
10
REVERSE VOLTAGE. (V)
100
100
10.0
1
0.1
0.01
0.1
1
10
T, PULSE DURATION. (sec)
Version: A07
100