SS12 THRU SS110 1.0 AMP. Surface Mount Schottky Barrier Rectifiers Voltage Range 20 to 100 Volts Current 1.0 Ampere SMA/DO-214AC Features For surface mounted application Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-O Epitaxial construction High temperature soldering: 260oC/ 10 seconds at terminals .062(1.58) .050(1.27) .111(2.83) .090(2.29) .187(4.75) .160(4.06) Mechanical Data .091(2.30) .078(1.99) Case: Molded plastic Terminals: Solder plated Polarity: Indicated by cathode band Packaging: 12mm tape per EIA STD RS-481 Weight: 0.064 gram .012(.31) .006(.15) .008(.20) .004(.10) .056(1.41) .035(0.90) .210(5.33) .195(4.95) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25℃ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol SS SS SS SS Type Number Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL(See Fig. 1) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) Maximum Instantaneous Forward Voltage (Note 1) @ 1.0A Maximum DC Reverse Current @ TA =25℃ at Rated DC Blocking Voltage @ TA=100℃ Maximum DC Reverse Current at VR=33V & TA=50℃ Typical Junction Capacitance (Note 3) VRRM VRMS VDC 12 20 14 20 13 30 21 30 14 40 28 40 SS 16 60 42 60 15 50 35 50 SS 19 90 63 90 SS 110 100 70 100 Units V V V I(AV) 1.0 A IFSM 30 A VF 0.5 0.75 0.80 V 5.0 0.05 0.5 mA mA 0.4 IR 10 HTIR - 5.0 Cj 50 RθJL 28 88 RθJA Operating Temperature Range TJ -65 to +125 -65 to +150 Storage Temperature Range TSTG -65 to +150 Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle 2. Measured on P.C.Board with 0.2 x 0.2”(5.0 x 5.0mm) Copper Pad Areas. 3. Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Typical Thermal Resistance (Note 2) - 52 - uA pF ℃/W ℃/W ℃ ℃ RATINGS AND CHARACTERISTIC CURVES (SS12 THRU SS110) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE FIG.2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 RESISTIVE OR INDUCTIVE LOAD SS15-SS110 SS12- SS14 .50 PCB MOUNTED ON 0.2X0.2" (5.0X5.0mm) COPPER PAD AREAS 0 PEAK FORWARD SURGE CURRENT. (A) AVERAGE FORWARD CURRENT. (A) 1.0 AT RATED TL 8.3ms Single Half Sine Wave JEDEC Method 40 30 20 10 0 50 60 70 80 90 100 110 120 130 140 150 160 1 170 10 o LEAD TEMPERATURE. ( C) 100 NUMBER OF CYCLES AT 60Hz FIG.3- TYPICAL FORWARD CHARACTERISTICS FIG.4- TYPICAL REVERSE CHARACTERISTICS 100 50 SS12-SS14 SS15-SS110 INSTANTANEOUS REVERSE CURRENT. (mA) INSTANTANEOUS FORWARD CURRENT. (A) Tj=125 0C 10.0 Tj=150 0C 1 Tj=25 0C 0.1 PULSE WIDTH=300 S 1% DUTY CYCLE 10 Tj=125 0C 1 Tj=75 0C 0.1 0.01 O Tj=25 C SS12-SS14 SS15-SS16 SS19-SS110 0.01 0.001 0 .2 .4 .6 .8 1.0 1.2 1.4 1.6 FIG.5- TYPICAL JUNCTION CAPACITANCE 20 40 60 80 100 120 140 FIG.6- TYPICAL CAPACITANCE 200 400 100 Tj=25 0C f=1.0MHz Vsig=50mVp-p 180 SS12-SS14 SS15-SS16 SS19-SS110 140 NOTE: TYPICAL CAPACITANCE AT 0 V = 160 pF 160 C, CAPACITANCE (pF) JUNCTION CAPACITANCE.(pF) 0 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%) FORWARD VOLTAGE. (V) 120 100 80 60 40 20 10 0 .1 1.0 10 100 0 4 8 12 16 20 24 28 V R , REVERSE VOLTAGE (VOLTS) REVERSE VOLTAGE. (V) - 53 - 32 36 40