TSM4410D Dual N-Channel Enhancement Mode MOSFET Pin assignment: 1. Source 1 2. Gate 1 3. Source 2 4. Gate 2 Vds = 25V 8. Drain 1 7. Drain 1 6. Drain 2 5. Drain 2 Id = 10A Rds(on), Vgs @ 10V, Ids @ 10A = 21mΩ Rds(on), Vgs @ 4.5V, Ids @ 8A = 15mΩ Features Block Diagram Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Fully characterized avalanche voltage and current Ordering Information Part No. Packing TSM4410DCS RL Tape & Reel Package SOP-8 2,500/per reel Absolute Maximum Rating (TA = 25 oC unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID 10 Pulsed Drain Current IDM 50 Maximum Power Dissipation TA = 25 oC o TA = 70 C Operating Junction Temperature Operating Junction and Storage Temperature Range PD A 2.5 W 1.6 TJ +150 o C TJ, TSTG -55 to +150 o C Symbol Limit RθjF 22 Rθja 50 Thermal Performance Parameter Junction-to-Foot Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Note: 1. Maximum DC current limited by the package 2. 1-in2 2oz Cu PCB board TSM4410D 1-1 2006/04 rev. A Unit o C/W Electrical Characteristics (single channel) TJ = 25 oC, unless otherwise noted Parameter Conditions Symbol Min Typ Max Unit VGS = 0V, ID = 250uA BVDSS 25 -- -- V VGS = 4.5V, ID = 8A RDS(ON) -- 13 15 mΩ VGS = 10V, ID = 10A RDS(ON) -- 18 21 mΩ Gate Threshold Voltage VDS = VGS, ID = 250uA VGS(TH) 1.0 -- 3.0 V Zero Gate Voltage Drain Current VDS = 25V, VGS = 0V IDSS -- -- 1.0 uA Gate Body Leakage VGS = ± 20V, VDS = 0V IGSS -- -- ±100 nA Forward Transconductance VDS =10V, ID = 10A gfs -- 15 -- S Qg -- 15 26 Qgs -- 2.5 -- Qgd -- 3 -- td(on) -- 20 -- tr -- 6 -- td(off) -- 49 -- tf -- 16 -- Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Dynamic Total Gate Charge Gate-Source Charge VDS = 15V, ID = 10A, VGS = 10V Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time VDD = 15V, RL = 15Ω, ID = 1A, VGEN = 10V, RG = 6Ω Turn-Off Fall Time nC nS Input Capacitance VDS = 15V, VGS = 0V, Ciss -- 921 -- Output Capacitance f = 1.0MHz Coss -- 208 -- Crss -- 108 -- IS -- -- 3 A VSD -- 0.87 1.5 V Reverse Transfer Capacitance pF Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS = 3A, VGS = 0V Note: 1. pulse test: pulse width <=300uS, duty cycle <=2% 2. Negligible, Dominated by circuit inductance. TSM4410D 2-2 2006/04 rev. A Typical Characteristics Curve (single channel) (Ta = 25 oC unless otherwise noted)) TSM4410D 3-3 2006/04 rev. A Electrical Characteristics Curve (continued) TSM4410D 4-4 2006/04 rev. A SOP-8 Mechanical Drawing A DIM 9 16 B 1 P 8 G R C D TSM4410D M F K 5-5 A B C D F G K M P R SOP-8 DIMENSION MILLIMETERS INCHES MIN MAX MIN MAX 4.80 5.00 0.189 0.196 3.80 4.00 0.150 0.157 1.35 1.75 0.054 0.068 0.35 0.49 0.014 0.019 0.40 1.25 0.016 0.049 1.27 (typ) 0.05 (typ) 0.10 0.25 0.004 0.009 0o 7o 0o 7o 5.80 6.20 0.229 0.244 0.25 0.50 0.010 0.019 2006/04 rev. A