UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC’s proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode the advanced technology has been especially tailored. FEATURES *Pb-free plating product number:12N60L * RDS(ON) = 0.7Ω @VGS = 10 V * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Normal Lead Free Plating 12N60-x-TA3-T 12N60L-x-TA3-T 12N60-x-TF3-T 12N60L-x-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd Package TO-220 TO-220F Pin Assignment 1 2 3 G D S G D S Packing Tube Tube 1 of 7 QW-R502-170.A 12N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 12 A Continuous Drain Current ID 12 A Pulsed Drain Current (Note 1) IDM 48 A Single Pulsed (Note 2) EAS 790 mJ Avalanche Energy 24 mJ Repetitive (Note 1) EAR Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Junction Temperature TJ +150 ℃ Operating Temperature TOPR -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) 12N60-A 12N60-B PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL 12N60-A 12N60-B BVDSS TEST CONDITIONS VGS = 0 V, ID = 250 µA Drain-Source Leakage Current IDSS VDS = 600 V, VGS = 0 V Gate-Source Leakage Current IGSS VGS = ±30 V, VDS = 0 V Breakdown Voltage Temperature △BVDSS/△TJ ID = 250 µA, Referenced to 25°C Coefficient ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250µA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 6.0A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25 V, VGS = 0 V, f = 1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) Turn-On Rise Time tR VDD = 300V, ID = 12A, RG = 25Ω (Note 4, 5) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS= 480V,ID= 12A, VGS= 10 V Gate-Source Charge QGS (Note 4, 5) Gate-Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 12A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 12A, dIF/dt = 100 A/µs (Note 4) Reverse Recovery Charge QRR Notes:1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 10mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C 4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 600 650 10 ±100 0.7 2.0 0.55 V V µA nA V/℃ 4.0 0.7 V Ω 1480 1900 200 270 25 35 pF pF pF 30 115 95 85 42 8.6 21 70 240 200 180 54 ns ns ns ns nC nC nC 1.4 V 12 A 48 A 380 3.5 ns µC 2 of 6 QW-R502-170.A 12N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver Same Type as D.U.T. VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 6 QW-R502-170.A 12N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Fig. 2A Switching Test Circuit Fig. 2B Switching Waveforms Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Fig. 4B Unclamped Inductive Switching Waveforms 4 of 6 QW-R502-170.A 12N60 Power MOSFET TYPICAL CHARACTERISTICS Transfer Characteristics On-Resign Characteristics Top: VGS 15V 1 10V 10 8.0V 7.0V 6.5V 6.0V Bottom: 5.5V 101 150℃ 25℃ 10 0 55℃ 0 10 Notes: 250μs Pulse Test TC=25℃ 10-1 100 101 Drain-Source Voltage, VGS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10-1 2 Notes: 1.VDS=50V 2.250μs Pulse Test 4 6 8 Gate-Source Voltage, VGS (V) 10 5 of 6 QW-R502-170.A 12N60 On-Resistance, RDS(ON) (mΩ) TYPICAL CHARACTERISTICS Drain Current, ID (A) Power MOSFET Thermal Response, ZθJC(t) Transient Thermal Response Curve D=0.5 100 0.2 Notes: 1.Zθjc(t)=2.27℃/W Max. 2.Duty Factor,D=t1/t2 3.TJM-TC=PDM*ZθJC(t) 0.1 0.05 -1 10 0.02 0.01 PDM Single Pulse t T 10-2 10-5 10-4 10-3 10-2 10-1 Square Wave Pulse Duration, t1 (sec) 100 101 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-170.A