UNISONIC TECHNOLOGIES CO., 2SC3647 NPN EPITAXIAL SILICON TRANSISTOR HIGH-VOLTAGE SWITCHING APPLICATIONS FEATURES 1 * Adoption of FBET, MBIT processes * High breakdown voltage and large current capacity * Fast switching time * Very small size marking it easy to provide high - density, small-sized hybrid ICs SOT-89 *Pb-free plating product number: 2SC3647L PIN CONFIGURATION PIN NO. PIN NAME 1 Emitter 2 Collector 3 Base ORDERING INFORMATION Order Number Normal Lead free 2SC3647-AB3-R 2SC3647L-AB3-R www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Package Packing SOT-89 Tape Reel 1 QW-R208-039,A 2SC3647 NPN EPITAXIAL SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC ICP PC TJ TSTG RATINGS 120 100 6 2 3 500 150 -40 ~ +150 UNIT V V V A A mW °C °C ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Collector Cutoff Curent Emitter Cutoff Curent Output Capacitance DC Current Gain Turn-ON Time Storage Time Fall Time Gain-Bandwidth Product ■ TEST CONDITIONS IC = 1A, IB = 100mA IC = 1A, IB = 100mA IC = 10µA, IE =0 IC = 1mA, RBE =∞ IE = 10µA, IC=0 VCB = 100V, IE =0 VEB = 4V, IC =0 VCB = 10V, f =1MHz VCE = 5V, IC = 100mA See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VCE = 10V, IC = 100mA MIN TYP 0.13 0.85 MAX 0.4 1.2 120 100 6 100 100 16 100 UNIT V V V V V nA nA pF 400 80 1000 50 120 ns ns ns MHz CLASSIFICATION OF hFE RANK RANGE ■ SYMBOL VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Cob hFE tON tSTG tF fT R 100 ~ 200 S 140 ~ 280 T 200 ~ 400 SWITCHING TIME TEST CIRCUIT PW=20μS DC≤1% IB1 RB INPUT IB2 VR RL 50 + 100μ -5V + 470μ 50V 10IB1= -10IB2=I C=0.7A Unit (Resistance:Ω, Capacitance:F ) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 QW-R208-039,A 2SC3647 ■ NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERICS IC - VCE IC - V CE 40mA 30mA 1.6 20 m A 10mA 1.2 5mA 0.8 3mA 2mA 0.4 0 3.0mA 3 2 2.5mA 0.6 2.0mA 0.4 1.5mA 1.0mA 0.2 1mA 1 3.5mA 0.8 IB = 0 0 A 4.5m 4.0mA 5. 0m A A 50 m 1.0 Collector Current, Ic (A) Collector Current, Ic (A) 2.0 0 5 4 0.5mA IB = 0 10 0 Collector to Emitter Voltage, VCE (V) hFE - IC 1000 VCE = 5V DC Current Gain, hFE 5 1.6 75℃ 2 5℃ - 25℃ 1.2 0.8 Ta = Collector Current, Ic (A) VCE = 5V 7 2.0 0.4 0 0.4 0.2 3 T a = 75℃ 25℃ - 25℃ 2 100 7 5 0.6 1.0 0.8 3 1.2 70.01 2 3 Base to Emitter Voltage, VBE (V) 5 7 0.1 Collector to Emitter Saturation Voltage, V CE (sat) (mV) Output Capacitance, c ob (pF) 5 3 2 10 7 5 3 5 7 10 2 5 7 1.0 1000 7 5 F = 1MHz 2 3 2 3 VCE (sat) - IC 7 7 1.0 2 Collector Current, IC (A) cob - VCB 100 3 50 40 Collector to Emitter Voltage, VCE (V) IC - VBE 2.4 0 30 20 3 5 7 100 2 Collector to Base Voltage, VCB (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw IC/IB = 10 3 2 100 7 5 Ta = 75℃ 2 5℃ 3 -25℃ 2 10 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Collector Current, IC (A) 3 QW-R208-039,A 2SC3647 NPN EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERICS(Cont.) ■ VBE ( sat) - IC ASO 5 3 2 IC/IB = 10 7 5 Collector Current, IC (A) Base to Emitter Saturation Voltage, VBE ( sat) (V) 10 3 2 1.0 Ta = -25℃ 7 75℃ 25℃ 5 3 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 2 Collector Current, IC (A) 1.0 7 5 3 2 ICP IC 10 DC 1m 10 s m s 0m s Op e ra tio n 0.1 7 5 3 2 One Pulse - Ta = 25℃ 0.01 Mounted on ceramic board 7 (250mm × 0.8mm) 5 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 Collector to Emitter Voltage, VCE (V) PC - Ta 1.8 Collector Dissipation, Pc (W) 1.6 1.4 1.2 1.0 0.8 0.6 Infin 0.4 ite h e 0.2 0 0 20 40 60 at sin k 80 100 120 140 160 Ambient Temperature, Ta (℃) UTC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 QW-R208-039,A