UTC 2SC3834 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicon transistor. APLLICATION 1 *Humidifier,DC-DC converter,and general purpose. TO-220 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current (PULSE) Collector Power Dissipation( Tc=25°C ) Junction Temperature Storage Temperature VCBO VCEO VEBO IB Ic Pc Tj TSTG 200 120 8 3 7 50 150 -55 ~ +150 V V V A A W °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified) PARAMETER SYMBOL Collector Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Output Capacitance BVCEO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob TEST CONDITIONS MIN Ic= 50mA VCB=200V, IE=0 VEB= 8V, Ic =0 VCE= 4V,Ic= 3A Ic=3A ,IB=0.3A Ic=3A ,IB=0.3A VCE=12V,IE=-0.5mA,f=100MHz VCB= 10V, IE= 0 A,f=1MHz TYP MAX 120 100 100 220 0.5 1.2 70 30 110 UNIT V μA μA V V MHz pF TYPE SWITCHING CHARACTERISTCS (Common Emitter) Vcc(V) RL(Ω) Ic (A) VBB1(V) VBB2(V) IB1(A) IB2(A) Ton(μA) Tstg(μA) Tf (μA) 50 16.7 3 10 -5 0.3 -0.6 0.5(max) 3.0(max) 0.5(max) CO. LTD 1 UTC UNISONIC TECHNOLOGIES QW-R203-026,A UTC 2SC3834 NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS CURVES 2 IB=10mA 1 0 0 0.005 0.01 0 1 2 3 4 Collector-Emitter Voltage V CE(V) DC Current Gain H FE 200.0 2 25℃ 0. 1 0.5 1 5 7 -30℃ 50 20 0.01 Collector Current IC(A) 0.05 0.1 0.5 1 5 Safe Operating Area (Single Pulse) fT–IE Characteristics (Typical) 20 10 VCE=12V 0m s 0.3 Time t(ms) Without Healstink Natural Cooling 0.1 0.05 5 10 50 120 200 Collect-Emitter Voltage Vc E(V) UNISONIC TECHNOLOGIES 40 30 k 0.5 Pc –Ta Derating 50 n tsi -5 1 1000 100 10 1 a He UTC 0.5 ite Emitter Current IE(A) 1 f in -1 7 θj-a–t Characteristics 4 In -0.5 1.0 1.1 ith -0.05 -0.1 0.5 W 10 ms 20 5 10 Collector Current Ic (A) 10 0 -0.01 0 Collector Current IC(A) 30 Cut- off Frequency f T (M H Z) 125℃ VCE=4V 100 50 1 Base-Emittor Voltage V BE(V) M axim um Pow er Dissipation Pc (W ) DC Current Gain H FE Typ 100 2 0 1 HFE-Ic Temperature Characteristics (Typical) 300 VCE=4V 0.5 0.1 3 Base Current IB(A) HFE-IC Characteristics (Typical) 200 0.05 4 Temp) 1 5A 3 3A 20mA - 30℃ (C ase 40mA ase Tem p) se T e mp ) 4 5 ℃ (C 60mA (Ca 5 6 2 1 25 A 100m A Collector Current Ic (A) 6 7 Collector Current Ic (A) A 150m Transient Thermal Resistance θj-a (C/W ) A 200m IC = 1 Collector-Em itter Saturation Voltage V CE (sat) (V) 7 IC-VBE Temperature Characteristics (Typical) V CE(sat)-IB Characteristics (Typical) 25 ℃ Ic-V CE Characteristics(Typical) 20 10 2 0 WithoutHeatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(℃) CO. LTD 2 QW-R203-026,A UTC 2SC3834 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R203-026,A