UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR SWITCH NPN TRANSISTOR APLLICATION *Humidifier,DC-DC converter,and general purpose. 1 TO-3PN 1: BASE 2:COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Collector Current Collector Current (PULSE) Collector Power Dissipation( Tc=25°C ) Junction Temperature Storage Temperature VCBO VCEO VEBO IB 200 120 8 3 7 14 70 150 -55 ~ +150 V V V A A A W °C °C Ic Pc Tj TSTG ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified) PARAMETER SYMBOL Collector Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Output Capacitance Turn-on Time Storage Time Fall Time BVCEO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton tstg tf UTC TEST CONDITIONS MIN Ic= 50mA VCB=200V, IE=0 VEB= 8V, Ic =0 VCE= 4V,Ic= 3A Ic=3A ,IB=0.3A Ic=3A ,IB=0.3A VCE=12V,IE=-0.5mA VCB= 10V, IE= 0 A,f=1MHz See specified Test Circuit 120 UNISONIC TECHNOLOGIES TYP MAX 100 100 220 0.5 1.2 70 30 110 0.5 3.0 0.5 CO. LTD UNIT V μA μA V V MHz pF µs µs µs 1 QW-R214-002,A UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR CLASSIFICATION of hFE RANK RANGE A 70-130 B 120-170 C 160-220 Typical Switching Characteristics(Common Emitter) Ic (A) 3 16.7 +VBB1 0 50μs 0 20μs -VBB2 IC R1 VBB2 (V) -5 VBB1 (V) 10 IB1 (A) 0.3 IB2 (A) -0.6 VCC IB1 IB D.U.T 0 R2 IB2 0.9IC 0.1IC IC RL 0 GND IB1 IB2 RL (Ω) Vcc (V) 50 0 0 tON tstg tf ELECTRICAL CHARACTERISTICS CURVES Ic-VCE m 200 15 0m A 10 0m 5 A A 60 m 4 A 40 m 2 IB=10mA 1 0 0 UTC 1 2 3 Collector-Emitter Voltage VCE (V) 4 1 0 0.005 0.01 5A A 20 m 2 3A 3 2.6 A IC=1 Collector Current, Ic (A) 6 VCE(sat)-IB A Collector-Emitter Saturation Voltage, VCE(sat) (V) 7 0.5 0.05 0.1 Base Current, IB (A) UNISONIC TECHNOLOGIES CO. LTD 1 2 QW-R214-002,A UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR IC-VBE Temperature 7 fT–IE 30 VCE=12V Cut- off Frequency, fT (MH Z) 5 1 0 0 0.5 -30℃ (Tc) ℃ 2 25℃ 3 (Tc ) (Tc ) 4 125 Collector Current, Ic (A) 6 1.0 1.1 20 10 0 -0.01 -0.05-0.1 Base-Emittor Voltage, VBE (V) DC Current Gain, HFE HFE-Ic 200 VCE=4V 125℃ Typ 100 50 20 0.02 -5 HFE-Ic Temperature 300 VCE=4V 100 -0.5 -1 Emitter Current, IE (A) 25℃ 50 0.1 0.5 1 Collector Current Ic (A) 5 7 20 0.01 -30℃ 0.05 0.1 0.5 1 Collector Current Ic (A) 5 7 Transient Thermal Resistance, θj-a (C/W) θj-a–t 5 1 0.5 0.4 1 UTC 10 100 Time, t (ms) 1000 2000 UNISONIC TECHNOLOGIES CO. LTD 3 QW-R214-002,A UTC 2SC3835 NPN EPITAXIAL SILICON TRANSISTOR Safe Operating Area (Single Pulse) 20 0.05 5 10 50 120 Collector-Emitter Current, VcE (A) 200 30 k 0.1 40 sin at He Without Healstink Natural Cooling ite fin In 0.5 50 ith 1 60 W s 10m 5 70 Maximum Power Dissipation, Pc (W) 10 Collector Current, Ic (A) Pc–Ta Derating 10 0m s 20 10 3.5 00 Without Heatsink 25 50 75 100 125 150 Ambient Temperature Ta (℃) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R214-002,A