UTC 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER AMPLIFIER STROBO FLASH DESCRIPTION * medium power amplifier applications * strobo flash applications 1 FEATURES TO-92SP *Low Saturation Voltage: VCE(sat) = 0.27 V (max.), (Ic = 3A / IB =60 mA) 1.EMITTER 2.COLLECTOR 3.BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage RATING UNIT VCBO VCEO VEBO 15 10 7 5(DC) Collector Current Ic 9(PLUSED) Collector Power Dissipation Pc(Note 1) 550 Junction Temperature Tj 150 Storage Temperature Tstg -55 ~ +150 Note 1: When a device is mounted on a glass epoxy board (35 mm*30 mm*1mm) V V V A A mW °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C,unless otherwise specified) PARAMETER SYMBOL Collector-Emitter Breakdown Voltage BVCEO Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain Collector-Emitter Saturation Voltage Collector Output Capacitance Note 2: Pulse test UTC ICBO IEBO hFE 1 (Note 2) hFE2 (Note 2) TEST CONDITIONS IC =1mA, IB= 0 VCB=15V, IE= 0 VEB= 5V, Ic=0 VCE=1.5V,Ic=0.5A VCE=1.5V,Ic=2A hFE3 (Note 2) VCE=1.5V,Ic=5A VCE(sat) (note 2) Ic=3A,IB=60mA Cob VCB=10V, IE= 0, f=1MHz UNISONIC TECHNOLOGIES MIN TYP MAX 10 0.1 0.1 700 450 320 UNIT V μA μA 170 0.27 25 CO. LTD V pF 1 QW-R216-002,B UTC 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS CURVES Ic-VCE 60 30 20 Common Emitter Ta= 25℃ 4 Collector Current Ic (A) VCE(sat)-Ic 10 8 3 6 4 2 2 1 0 1 IB=0mA 2.0 1.5 1.0 0.5 Collector Emitter Voltage VCE(V) 0 1 Collector Emitter Saturation Voltage VCE(sat)(V) 5 Ta=100℃ 0.1 Ta= 25℃ Ta= -25℃ 0.01 0.001 0.01 hFE-Ic 5.0 Common Emitter VCE=1.5V Collector Current Ic (A) DC Current Gain hFE 10000 Ta=100℃ 1000 Ta= 25℃ Ta= -25℃ 100 Common Emitter Ic/IB=50 0.1 1 Collector Current Ic (A) 10 Ic-VBE Common Emitter VCE=1.5V 4.0 Ta=100℃ 3.0 Ta= 25℃ 2.0 Ta= -25℃ 1.0 10 0.01 0.1 1 Collector Current Ic (A) Ic max(Pulsed) 1ms* t=100ms* DC Operation 0.1 *Single nonrepetitive pulse Ta= 25℃ Curves must be derated linearly with increase in temperature 0.01 0.01 VCEO max 0.1 1 10 Collector Emitter Voltage VCE(V) UTC Collector Power Dissipation Pc (mW) Collector Current Ic (A) 1 1.4 600 when a device is mounted on a Glass epoxy board (35mm*30mm*1mm) Ic max (Continous) 0.2 0.4 0.6 0.8 1.0 1.2 Base Emitter Voltage VBE(V) Pc-Ta Safe Operating Area 100 10 0 0 10 400 200 0 100 0 150 50 100 Ambient Temperature Ta(℃) UNISONIC TECHNOLOGIES CO. LTD 2 QW-R216-002,B UTC 2SC5765 NPN EPITAXIAL SILICON TRANSISTOR rth-tw Transient thermal impedance rth (℃ /W) 10000 when a device is mounted on a Glass epoxy board (35mm*30mm*1mm) 1000 100 10 0.001 Single pulse 0.01 0.1 1 Pulse width tw (s) 10 100 1000 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R216-002,B