UNISONIC TECHNOLOGIES CO., LTD 2SD1816 NPN EPITAXIAL PLANAR TRANSISTOR HIGH CURRENT SWITCHIG APPLICATIONS 1 FEATURES TO-252 * Low collector-to-emitter saturation voltage * Good linearity of hFE * Small and slim package facilitating compactness of sets. * High fT * Fast switching speed 1 TO-251 *Pb-free plating product number: 2SD1816L ORDERING INFORMATION Order Number Normal Lead Free Plating 2SD1816-x-TM3-F-T 2SD1816L-x-TM3-F-T 2SD1816-x-TN3-F-K 2SD1816L-x-TN3-F-K 2SD1816-x-TN3-F-R 2SD1816L-x-TN3-F-R Note: x: Rank, refer to Classification of hFE1. Package TO-251 TO-252 TO-252 Pin Assignment 1 2 3 B C E B C E B C E Packing Tube Bulk Tape Reel 2SD1816L-x-TM3-F-T (1)Packing Type (2)Pin Assignment (3)Package Type (1) K: Bulk, T: Tube, R: Tape Reel (2) refer to Pin Assignment (4)Rank (3) TM3: TO-251, TN3: TO-252 (4) x: refer to Classification of hFE1 (5)Lead Plating (5) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R209-011,B 2SD1816 NPN EPITAXIAL PLANAR TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta =25℃ ) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO VEBO DC PULSE(Note 1) Collector Current Collector Power Dissipation RATINGS 120 100 6 4 8 1 (TC=25°C) 20 (Note 2) +150 -40 ~ +150 IC PD UNIT V V V A A W W °C °C Junction Temperature TJ Storage Temperature TSTG Note1: Duty=1/2, Pw=20ms Note2: When mounted on a 40×40×0.7mm ceramic board Note3: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Collector Cut-Off Current Emitter Cut-Off Current DC Current Transfer Ratio Transition Frequency Output Capacitance Turn-on Time Storage Time Fall Time SYMBOL BVCBO BVCEO BVEBO VBE(SAT) VCE(SAT) ICBO IEBO hFE1 hFE2 fT Cob tON tSTG tF TEST CONDITIONS IC =10µA, IE =0 IC =1mA, RB=∞ IE =10µA, IC=0 IC = 2A, IB =0.2A IC = 2A, IB=0.2A VCB = 100 V, IE =0 VEB = 4V, IC=0 VCE = 5V, IC = 0.5A VCE =5V, IC = 3A VCE =10V, IC =0.5A VCB =10V, IE =0A, f =1MHz See test circuit See test circuit See test circuit MIN 120 100 6 TYP 0.9 150 70 40 MAX UNIT V V V 1.2 V 400 mV 1 µA 1 µA 400 180 40 100 900 50 MHz pF ns ns ns CLASSIFICATION of hFE1 RANK RANGE R 100 - 200 S 140 - 280 T 200 - 400 Q 70 -140 TEST CIRCUIT PW=20μS Duty Cycle≒1% I B1 INPUT RB OUTPUT I B2 50 VR + 100µ + 470µ -5V 50V Ic=10, I B1= -10, IB2=2A Unit (resistance:Ω, capacitance: F) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R209-011,B 2SD1816 NPN EPITAXIAL PLANAR TRANSISTOR TYPICAL CHARACTERISTICS Ic -VCE Ic -VCE 100mA 90mA 80mA 70mA 60mA 4 2.0 ColletcorCurrent, Ic (A) Colletcor Current, Ic (A) 5 A 50mmA 40 A 30m A 20m 3 10mA 2 5mA 1 2mA I B=0 0 0 1 1.6 5mA 1.2 4mA 3mA 0.8 2mA 0.4 1mA IB=0 0 3 2 8mA 7mA 6mA 5 4 0 20 10 hFE - Ic Ic -VBE 1000 VCE=5V 4 3 2 Ta=75℃ 25℃ -25℃ 1 0 0.4 0.6 0.8 Ta=75℃ 3 2 25℃ -25℃ 100 7 5 3 2 10 7 5 1.2 1.0 VCE=5V 7 5 DC Current Gain, hFE Colletcor Current, Ic(A) 5 0.2 5 0.01 2 3 Base to Emitter Voltage , VBE (V) 5 2 3 5 1.0 2 3 5 10 Cob - VCB 3 VCE=10V 3 Output Capacitance, Cob (pF) Gain-Bandwidth Product, f T (MHz) 0.1 Collector Current,I C(A) f T -I c 5 2 100 7 5 3 2 10 50 Collector to Emitter Voltage,VCE(V) Collector to Emitter Voltage,VCE (V) 0 40 30 f=1MHZ 2 100 7 5 3 2 7 5 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 Colletcor Current, Ic (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 Colletcor to Base Voltage, VCB (V) 3 of 4 QW-R209-011,B 2SD1816 NPN EPITAXIAL PLANAR TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) VCE (SAT) - Ic VCE(SAT) - Ic 10 IC/IB=10 3 Base to Emitter Saturation Voltage, VBE(SAT) (V) Collector to Emitter Saturation Voltage, VCE(SAT) (mV) 5 2 1000 7 5 3 2 100 7 5 ℃ 25 Ta=75℃ 3 2 ℃ -25 5 0.01 2 3 5 3 2 0.1 IC/I B=10 7 5 3 2 7 75 ℃ 5 3 2 5 2 1.0 3 5 5 10 0.01 2 3 Collector Current, IC (A) 1. 2 3 0 Collector Current , IC (A) 5 100ms io n ra t pe 3 2 O (T Op a= 25 e rat ℃ ion ) 5 10ms C 1.0 Collector Dissipation, PD (W) DC c= (T ℃ 25 0.1 5 ) 3 2 Tc=25℃ one pulse 0.01 5 2 3 5 1.0 2 3 5 10 5 5 10 25 1ms D CollectorCurrent, IC (A) 2 3 PD -Ta Ic Icp 2 0.1 ASO 10 5 3 25 ℃ ℃ Ta =-25 1.0 2 3 5 100 2 Colletcor to Emitter Voltage,VCE (V) 20 15 10 5 1 0 No heat sink 0 20 40 60 80 100 120 140 160 Ambient Temperature, , Ta (℃) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R209-011,B