UNISONIC TECHNOLOGIES CO., LTD 7N65 Power MOSFET 7 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 TO-220F FEATURES * RDS(ON) = 1.35Ω @VGS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer capacitance ( CRSS = typical 18 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness *Pb-free plating product number: 7N65L SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Normal 7N65-TF3-T Order Number Lead Free Plating 7N65L-TF3-T Package TO-220F Pin Assignment 1 2 3 G D S Packing Tube 7N65L-TF3-T (1)Packing Type (1) T: Tube (2)Package Type (2) TF3: TO-220F (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 8 QW-R502-104,A 7N65 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL VDSS VGSS RATINGS UNIT 650 V ±30 V TC = 25°C 7.0 A Continuous Drain Current ID TC = 100°C 4.7 A Drain Current Pulsed (Note 1) IDM 28 A Avalanche Energy, Single Pulsed (Note 2) EAS 530 mJ Avalanche Energy, Repetitive, Limited by TJMAX EAR 14.2 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation (TC = 25°C) PD 142 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Drain-Source Voltage Gate-Source Voltage THERMAL DATA PARAMETER SYMBOL θJA θJC Junction-to-Ambient Junction-to-Case MIN TYP MAX 62.5 0.88 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER OFF Characteristics Drain-Source Breakdown Voltage SYMBOL BVDSS Drain-Source Leakage Current Gate-Source Leakage Current IDSS Forward Reverse Breakdown Voltage Temperature Coefficient ON Characteristics Gate Threshold Voltage Drain-Source ON-State Resistance Forward Transconductance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge IGSS VGS = 0 V, ID = 250 µA VDS = 650 V, VGS = 0 V VDS = 520 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V MIN TYP MAX UNIT 650 1 1 100 -100 △BVDSS/△TJ ID = 250 µA, Referenced to 25°C VGS(TH) RDS(ON) gFS CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QDD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS VDS = VGS, ID = 250 µA VGS = 10 V, ID = 3.5 A VDS = 40 V, ID = 3.5 A (Note 4) VDS = 25 V, VGS = 0 V, f = 1MHz VDD = 325V, ID = 7.0 A (Note 4, 5) VDS= 520V, ID= 7.0A, VGS= 10 V (Note 4, 5) 0.67 2.0 V µA µA nA nA V/℃ 4.0 1.35 V Ω S 1200 1600 150 190 18 25 pF pF pF 1 8.0 35 79 80 52 30 6.5 13 80 165 160 120 ns ns ns ns nC nC nC 2 of 8 QW-R502-104,A 7N65 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS Source- Drain Diode Ratings and Characteristics Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS =7.0 A Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 7.0 A, dIF/dt = 100 A/µs (Note 4) Reverse Recovery Charge QRR Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 19.5mH, IAS = 7.0A, VDD = 50V, RG = 0 Ω, Starting TJ = 25°C 3. ISD ≤ 7.0A, di/dt ≤100A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 320 2.4 1.4 V 7.0 A 28 A ns µC 3 of 8 QW-R502-104,A 7N65 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. VGS VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V I FM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-104,A 7N65 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% t D(ON ) Pulse Width ≤ 1μs tD (OFF) tF tR Duty Factor ≤0.1% Fig. 2A Switching Test Circuit Same Type as D.U.T. 50kΩ 0.2μF Fig. 2B Switching Waveforms QG 10V 0.3μF VDS QGS QGD VGS DUT VG 1mA Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS RD 10V VDD D.U.T. tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw IAS tp Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-104,A 7N65 Power MOSFET Breakdown Voltage Variation vs. Temperature 1.2 1.1 1.0 Note: 1. VGS=0V 2. ID=250µA 0.9 0.8 -100 -50 0 50 100 150 200 Junction Temperature, T J (℃) On-Resistance Junction Temperature Drain-Source On-Resistance, RDS(ON) (Normalized) Drain-Source Breakdown Voltage, BVDSS (Normalized) TYPICAL CHARACTERISTICS 3.0 2.5 2.0 1.5 0.5 0.0 -100 -50 0 50 100 150 200 Junction Temperature, T J (℃) Maximum Drain Current vs. Case Temperature Maximum Safe Operating Area 100 µs 10 1ms 10 ms 1 0.1 1 DC Notes: 1 . T J=25℃ 2 . T J=150 ℃ 3 . Single Pulse 10 8 DS(ON) Drain Current, I D (A) Drain Current, ID (A) Operation in This Area is Limited by R 100 Note: 1. VGS =10V 2. I D=3.5A 1.0 6 4 2 0 1000 25 Drain-Source Voltage, VDS (V) On-State Characteristics 1 0.1 Notes: 1. 250µs Pulse Test 2. T C=25℃ 0.1 1 10 Drain-to-Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Transfer Characteristics Drain Current, I D (A) Drain Current, I D (A) 10 VGS Top: 10V 8V 7.5V 7V 6.5V 6V 5.5V Bottorm:5.5V 50 75 100 125 150 Case Temperature, TC (℃) 10 25℃ 1 0.1 150℃ Notes: 1. VDS =50 V 2. 250 µs Pulse Test 2 4 6 8 10 Gate-Source Voltage, VGS (V) 6 of 8 QW-R502-104,A 7N65 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) On State Current vs. Allowable Case Temperature 2.5 VGS =20V 2.0 VGS=10V 1.5 1.0 0.5 0 Note: TJ=25℃ 0 5 10 15 20 25 Drain Current, I D (A) Reverse Drain Current, IDR (A) Drain-Source On-Resistance, RDS(ON) (ohm) On-Resistance Variation vs. Drain Current and Gate Voltage 10 150℃ 25℃ 1 Notes: 1. VGS=0V 2. 250µs Test 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-Drain Voltage, VSD (V) Capacitance Characteristics (Non-Repetitive) 2000 12 Gate-Source Voltage, VGS (V) C iss=C gs +C gd (C ds=shorted ) C os s=Cds +Cgd Crss=C gd 1600 Capacitance (pF) Gate Charge Characteristics Ciss 1200 Coss 800 400 Notes: 1. V GS =0V 2. f = 1MHz Crss 0 0.1 10 VDS=520V VDS=325V 8 VDS =130V 6 4 2 Note: ID=7A 0 1 0 10 10 20 30 40 50 60 70 Total Gate Charge, QG (nC) Drain-SourceVoltage, VDS (V) Transient Thermal Response Curve Thermal Response, θJC (t) 1 0.1 Notes : 1. θJC (t) = 0. 88℃/W Max. 2. Duty Factor , D=t1/t2 3.TJM-TC=P DM×θJC (t) 0.01 1E-5 1E-4 1E-3 0.01 0.1 1 10 Square Wave Pulse Duration, t1 (sec) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-104,A 7N65 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. 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