UNISONIC TECHNOLOGIES CO., LTD DTA123E PNP EPITAXIAL SILICON TRANSISTOR DIGITAL TRANSISTORS (BUILT- IN BIAS RESISTORS) 3 1 2 FEATURES 3 * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow positive input. EQUIVALENT CIRCUIT 2 OUT R1 SOT-23 1 SOT-323 3 IN R2 2 GND 1 SOT-523 *Pb-free plating product number:DTA123EL OUT IN GND ORDERING INFORMATION Order Number Normal Lead Free Plating DTA123E-AE3-6-R DTA123EL-AE3-6-R DTA123E-AL3-6-R DTA123EL-AL3-6-R DTA123E-AN3-6-R DTA123EL-AN3-6-R DTA123EL-AE3-6-R (1)Packing Type (2)Pin Assignment (3)Package Type (4)Lead Plating Package SOT-23 SOT-323 SOT-523 Pin Assignment 1 2 3 G I O G I O G I O Packing Tape Reel Tape Reel Tape Reel (1) R: Tape Reel (2) refer to Pin Assignment (3) AE3: SOT-23, AL3: SOT-323, AN3: SOT-523 (4) L: Lead Free Plating, Blank: Pb/Sn MARKING AC3 www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-086,A DTA123E PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL VCC VIN IOUT RATINGS UNIT -50 V -12 ~ +10 V -100 mA SOT-523 150 mW Power Dissipation PD SOT-23/SOT-323 200 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Supply Voltage Input Voltage Output Current ELECTRICAL SPECIFICATIONS (Ta=25°C) PARAMETER SYMBOL VIN(OFF) Input Voltage VIN(ON) Output Voltage VOUT(ON) Input Current IIN Output Current IOUT(OFF) DC Current Gain GIN Input Resistance R1 Resistance Ratio R2/R1 Transition Frequency fT * Transition frequency of the device TEST CONDITIONS VCC =-5V, IOUT =-100µA VOUT =-0.3V, IOUT =-20mA IOUT/IIN =10mA/-0.5mA VIN=-5V VCC =-50V, VIN =0V VOUT =-5V, IOUT =-20mA VCE =-10V, IE =−5mA, f=100MHz * UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX -0.5 UNIT -0.1 -0.3 -3.8 -0.5 V mA µA 2.2 1 250 2.86 1.2 KΩ -3 20 1.54 0.8 V MHz 2 of 3 QW-R206-086,A DTA123E PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTIC Input Voltage vs. Output Current (ON Characteristics) 100 Output Current vs. Input Voltage (OFF Characteristics) 10m 5m VOUT=-0.3V 10 5 Ta=-40℃ 25℃ 100℃ 2 1 500m 200m 500μ 100μ 50μ 20μ 10μ 5μ -100μ-200μ -500μ-1m -2m -5m -10m -20m -50m -100m 0 Output Current, IOUT (A) 1K -1.5 -2.0 -2.5 -3.0 1 lOUT/lIN=20 500m 200m 200 100 Output Voltage, VOUT(ON) (V) DC Current Gain, GI -1.0 Output Voltage vs. Output Current VOUT=-5V 500 -0.5 Input Voltage, VI(OFF) (V) DC Current Gain vs. Output Current 20 Ta=100℃ 25℃ -40℃ 200μ 2μ 1μ 100m 50 VCC=-5V 2m 1m 20 Output Current, IOUT (A) Input Voltage, VIN (ON) (V) 50 Ta=100℃ 25℃ -40℃ 10 5 2 1 - 100μ-200 μ -500 μ -1 m -2m -5m -10m -20m - 50m -100m Output Current, IOUT (A) 100m 50m Ta=100℃ 25℃ -40℃ 20m 10m 5m 2m 1m - 100μ-200 μ -500 μ -1 m -2m -5m -10m -20m - 50m -100m Output Current, I OUT (A) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-086,A