UNISONIC TECHNOLOGIES CO., LTD MMBT2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 2 FEATURES 1 SOT-23 3 * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 2 1 SOT-523 *Pb-free plating product number:MMBT2222AL ORDERING INFORMATION Order Number Normal Lead Free Plating MMBT2222A-AE3-R MMBT2222AL-AE3-R MMBT2222A-AN3-R MMBT2222AL-AN3-R MMBT2222AL-AE3-R Package SOT-23 SOT-523 Pin Assignment 1 2 3 E B C E B C Packing Tape Reel Tape Reel (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AE3: SOT-23, AN3: SOT-523 (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn MARKING 1P www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 6 QW-R206-019,D MMBT2222A NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified.) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL VCBO VCEO VEBO Ic RATINGS 75 40 6 0.6 SOT-23 350 Power Dissipation PC SOT-523 150 Junction Temperature TJ +150 Storage Temperature TSTG -55 ~ +150 Note: These are steady state limits. The factory should be consulted on applications involving pulsed or cycle operations. UNIT V V V A mW mW ℃ ℃ low duty THERMAL DATA PARAMETER SYMBOL SOT-23 SOT-523 Thermal Resistance, Junction to Ambient θJA RATINGS 15 833 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified.) PARAMETER OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage SYMBOL BVCBO BVCEO BVEBO Collector Cutoff Current ICBO Emitter Cutoff Current Base Cutoff Current Collector Cutoff Current ON CHARACTERISTICS IEBO IBL ICEO DC Current Gain hFE Collector-Emitter Saturation Voltage* VCE(SAT) Base-Emitter Saturation Voltage* VBE(SAT) SMALL SIGNAL CHARACTERISTICS Real Part of Common-Emitter High Re(hje) Frequency Input Impedance Transition Frequency fT Output Capacitance Cobo Input Capacitance Cibo Collector Base Time Constant rb'Cc Noise Figure NF TEST CONDITIONS IC=10µA, IE=0 IC=10mA, IB=0 IE=10µA, IC =0 VCB=60V, IE=0 VCB=60V, IE=0, Ta=150°C VEB=3.0V, IC=0 VCE=60V, VEB(OFF)=3.0V VCE=60V, VEB(OFF)=3.0V 75 40 6 IC =0.1mA, VCE=10V IC =1.0mA, VCE=10V IC =10mA, VCE=10V IC =10mA, VCE=10V, Ta= -55°C IC =150mA, VCE=10V* IC =150mA, VCE=1.0V* IC =500mA, VCE=10V* IC =150mA, IB=15mA IC =500mA, IB=50mA IC =150mA, IB=15mA IC =500mA, IB=50mA 35 50 75 35 100 50 40 0.6 IC=20mA, VCB=20V, f=300MHz IC =20mA, VCE=20V, f=100MHz VCB=10V, IE=0, f=100kHz VEB=0.5V, IC=0, f=100kHz IC=20mA, VCB=20V, f=31.8MHz IC=100µA, VCE=10V, Rs=1.0kΩ f=1.0kHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 0.01 10 10 20 10 V V V µA µA nA nA nA 300 0.3 1.0 1.2 2.0 V V V V 60 Ω 8.0 25 150 MHz pF pF pS 4.0 dB 300 2 of 6 QW-R206-019,D MMBT2222A NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS(Cont.) SWITCHING CHARACTERISTICS Delay Time tD VCC=30V, VBE(OFF)=0.5V, Rise Time tR IC=150mA, IB1=15mA Storage Time tS Vcc=30V, IC=150mA Fall Time tF IB1= IB2=15mA *Pulse test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 10 25 225 60 ns ns ns ns 3 of 6 QW-R206-019,D MMBT2222A NPN SILICON TRANSISTOR TEST CIRCUITS 30V 200Ω 1.0kΩ 16V 0 ≤200ns 500Ω FIG.1 Saturated Turn-On Switching Time 6.0V -15V 1KΩ 30V 37Ω 1.0kΩ 0 ≤200ns 50Ω FIG.2 Saturated Turn-Off Switching Time UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R206-019,D MMBT2222A NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Collector-Emitter Saturation Voltage vs . Collector Current 500 DC Current Gain, h FE V CE=5V 400 300 125℃ 200 25℃ 100 -40℃ 0 0.1 0.3 1 10 30 100 300 Collector-Emitter Voltage, VCE(SAT) (V) DC Current Gain vs. Collector Current 0.4 β=10 0.3 125℃ 0.2 25℃ 0.1 -40℃ 1 10 Collector Current , I C (mA) Base-Emitter on Voltage vs. Collector Current -40℃ 25℃ 0.6 125℃ 0.4 1 500 10 100 500 1 VCE=5V 0.8 -40℃ 25℃ 0.6 125℃ 0.4 0.2 0.1 1 10 25 Collector Current , IC (mA) Collector Current , I C (mA) Base-Emitter Saturation Voltage vs. Collector Current Emitter Transition and Output Capacitance vs. Reverse Bias Voltage VCB=40V 20 100 Capacitance (pF) Collector Current, ICBO (nA) Base-Emitter on Voltage, VBE(ON) (V) Base-Emitter Voltage, VBE(SAT) (V) β=10 0.8 500 Collector Current , IC (mA) Base-Emitter Saturation Voltage vs . Collector Current 1 100 10 1 16 12 C te 8 C ob 0.1 4 25 50 75 100 125 150 Ambient Temperature , T A (℃) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.1 f=1MHz 1 10 100 Reverse Bias Voltage (V) 5 of 6 QW-R206-019,D MMBT2222A NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS(Cont.) Turn on and Turn off Times vs. Collector Current Switching Times vs. Collector Current 400 400 IC I B1=IB2 10 = VCC=25V 320 Time (ns) Time (ns) 320 240 160 IC IB1=IB2 10 = V =25V CC 240 tS 160 tR t OFF 80 tF 80 tON 0 tD 10 100 1000 Collector Current , IC (mA) 0 10 100 1000 Collector Current , I C (mA) Power Dissipation vs. Ambient Temperature Power Dissipation，PC (W) 1 0.75 0.25 0 0 25 50 75 100 125 150 Temperature (℃) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R206-019,D