UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES 3 *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: PC(MAX)=350mW *Low collector-Emitter saturation voltage APPLICATIONS 1 2 *Telephone switching *High voltage switch SOT-23 *Pb-free plating product number: MMBTA94L ORDERING INFORMATION Order Number Normal Lead Free Plating MMBTA94-AE3-R MMBTA94L-AE3-R Package SOT-23 Pin Assignment 1 2 3 E B C Packing Tape Reel MMBTA94L-AE3-R (1)Packing Type (1) R: Tape Reel (2)Package Type (2) AE3: SOT-23 (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn MARKING 4D Lead Plating www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-008,B MMBTA94 PNP SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Operating temperature range applies unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Dissipation (Ta=25°C) Collector Current Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO PC IC TJ TSTG RATING -400 -400 -6 350 -300 +150 -40~+150 UNIT V V V mW mA °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO Ic=-100µA,IE=0 Collector-Emitter Breakdown Voltage BVCEO Ic=-1mA,IB=0 Collector-Emitter Breakdown Voltage BVCES Ic=-100µA,VBE=0 Emitter-Base Breakdown Voltage BVEBO IE=-100µA,Ic=0 Collector Cut-off Current ICBO VCB=-300V,IE=0 Collector Cut-off Current ICES VCB=-400V,VBE=0 Emitter Cut-off Current IEBO VEB=-4V,IC=0 VCE=-10V,IC=-1mA VCE=-10V,IC=-10mA DC Current Gain (note) hFE VCE=-10V,IC=-50mA VCE=-10V,IC=-100mA IC=-10mA,IB=-1mA Collector-Emitter Saturation Voltage VCE(SAT) IC=-50mA,IB=-5mA Base-Emitter Saturation Voltage VBE(SAT) IC=-10mA,IB=-1mA Output Capacitance Cob VCB=-20V,IE=0, f=1MHz Note: Pulse test: PW<300µs, Duty Cycle<2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN -400 -400 -400 -5 60 70 70 40 TYP MAX UNIT V V V V -100 nA -1 µA 100 nA 300 -0.20 -0.5 -0.75 7 V V pF 2 of 3 QW-R206-008,B MMBTA94 PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS DC Current Gain Base-Emitter Saturation Voltage -10 1000 10 -0.1 -0.01 1 -1 -10 -100 -1000 -1 -10 -100 -1000 Ic, Collector Current (mA) Collector-Emitter Saturation Voltage Collector Output capacitance Ic=10*IB -1.0 -0.1 -0.01 Collector Output Capacitance (pF) Ic, Collector Current (mA) -10 VCE(SAT) (V) Ic=10*IB -1.0 100 VBE(SAT) (V) hFE,DC Current Gain VCE=-10V 1000 IE=0,f=1MHz 100 10 1 -1 -10 -100 Ic, Collector Current (mA) -0.1 -1 -10 -100 Collector Base Voltage (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R206-008,B