UNISONIC TECHNOLOGIES CO., LTD MPSA42/43 NPN SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR 1 DESCRIPTION SOT-89 The UTC MPSA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES *Collector-Emitter voltage: VCEO=300V(UTC MPSA42) VCEO=200V(UTC MPSA43) *High current gain *Complement to UTC MPSA92/93 1 TO-92 *Pb-free plating product number: MPSA42L MPSA43L ORDERING INFORMATION Order Number Normal Lead Free Plating MPSA42-AB3-R MPSA42L-AB3-R MPSA42-T92-B MPSA42L-T92-B MPSA42-T92-K MPSA42L-T92-K MPSA43-AB3-R MPSA43L-AB3-R MPSA43-T92-B MPSA43L-T92-B MPSA43-T92-K MPSA43L-T92-K Package SOT-89 TO-92 TO-92 SOT-89 TO-92 TO-92 Pin Assignment 1 2 3 B C E E B C E B C B C E E B C E B C Packing Tape Reel Tape Box Bulk Tape Reel Tape Box Bulk MPSA42L-AB3-R (1)Packing Type (1) B: Tape Box, K: Bulk, R: Tape Reel (2)Package Type (2) AB3: SOT-89, T92: TO-92 (3)Lead Plating (3) L: Lead Free Plating, Blank: Pb/Sn www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 3 QW-R208-034,B MPSA42/43 NPN SILICON TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified) PARAMETER RATINGS UNIT 300 V VCBO 200 V Collector-Emitter Voltage 300 V VCEO 200 V Emitter-Base Voltage VEBO 6 V Collector Current Ic 500 mA SOT-89 500 mW Collector Dissipation (Ta=25℃) Pc TO-92 625 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. Collector-Base Voltage SYMBOL MPSA42 MPSA43 MPSA42 MPSA43 ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL MPSA42 MPSA43 MPSA42 MPSA43 MPSA42 MPSA43 MPSA42 MPSA43 DC Current Gain Current Gain Bandwidth Product Collector Base Capacitance BVCBO Ic=100µA, IE=0 BVCEO Ic=1mA, IB=0 BVEBO IE=100µA, Ic=0 VCB=200V, IE=0 VCB=160V, IE=0 VBE=6V, Ic=0 VBE=4V, Ic=0 VCE=10V, Ic=1mA VCE=10V, Ic=10mA VCE=10V, Ic=30mA Ic=20mA, IB=2mA Ic=20mA, IB=2mA VCE=20V, Ic=10mA, f=100MHz VCB=20V, IE=0 f=1MHz ICBO IEBO hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage VCE(SAT) VBE(SAT) fT MPSA42 MPSA43 Ccb UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS MIN 300 200 300 200 6 TYP MAX V 100 100 100 100 80 80 80 UNIT V V nA nA 300 0.2 0.90 50 V V MHz 3 4 pF pF 2 of 3 QW-R208-034,B MPSA42/43 NPN SILICON TRANSISTOR TYPICAL CHARACTERISTICS Fig.1 DC Current Gain 10 Fig.2 Saturation Voltage 3 10 1 Ic=10*IB 10 V CE(SAT) ,VBE(SAT) (V) 10 2 1 10 0 10 10 10 1 10 VCE(SAT ) 10 10 0 10 1 10 2 Collector Current, Ic(mA) Fig.3 Capacitance Fig.4 Current Gain Bandwidth Product 1 10 10 0 10 1 10 2 Collector-Base Voltage(V) 10 3 3 VCE=20V 10 10 10 -1 Collector Current, Ic(mA) 2 -1 VBE(SAT ) 0 -1 10 2 IE=0 f=1MHz 10 10 -2 10 0 Current Gain Bandwidth Product (MHz) DC Current Gain, hFE VCE=10V 2 1 10 0 10 1 10 2 Collector Current, Ic(mA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R208-034,B