UNISONIC TECHNOLOGIES CO., LTD MPSA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR 1 FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD(MAX)=625mW * Low collector-Emitter saturation voltage SOT-89 1 TO-92 *Pb-free plating product number: MPSA94L ORDERING INFORMATION Order Number Normal Lead Free Plating MPSA94-AB3-F-R MPSA94-AB3-F-R MPSA94-T92-C-B MPSA94-T92-C-B MPSA94-T92-C-K MPSA94-T92-C-K MPSA94L-AB3-F-R (1)Packing Type (2)Pin Assignment (3)Package Type (4)Lead Plating www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd Package SOT-89 TO-92 TO-92 Pin Assignment 1 2 3 B C E E B C E B C Packing Tape Reel Tape Box Bulk (1) B: Tape Box, K: Bulk, R: Tape Reel (2) refer to Pin Assignment (3) T92: TO-92, AB3: SOT-89 (4) L: Lead Free Plating, Blank: Pb/Sn 1 of 3 QW-R201-021,B MPSA94 PNP EPITAXIAL SILICON TRANSISTOR ABSOLUTE MAXIMUM RATING (Operating temperature range applies unless otherwise specified) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VCBO VCEO VEBO RATINGS -400 -400 -6 625 0.5 -300 UNIT V V V TO-92 mW Collector Power Dissipation(Ta=25℃) PD SOT-89 W Collector Current IC mA ℃ Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current SYMBOL BVCBO BVCEO BVCES BVEBO ICBO ICES IEBO TEST CONDITIONS IC=-100µA, IE=0 IC=-1mA, IB=0 IC=-100µA, VBE=0 IE=-100µA, IC=0 VCB=-300V, IE=0 VCB=-400V, VBE=0 VEB=-4V, IC=0 VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA DC Current Gain(note) hFE VCE=-10V, IC=-50mA VCE=-10V, IC=-100mA IC=-10mA, IB=-1mA Collector-Emitter Saturation Voltage VCE(SAT) Ic=-50mA, IB=-5mA Base-Emitter Saturation Voltage VBE(SAT) IC=-10mA, IB=-1mA Output Capacitance Cob VCB=-20V, IE=0, f=1MHz Note: Pulse test: PW<300µs, Duty Cycle<2% UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN -400 -400 -400 -5 60 70 70 40 TYP MAX UNIT V V V V -100 nA -1 µA 100 nA 300 -0.20 -0.5 -0.75 7 V V pF 2 of 3 QW-R201-021,B MPSA94 PNP EPITAXIAL SILICON TRANSISTOR TYPICAL CHARACTERISTICS DC Current Gain Base-Emitter Saturation Voltage 1000 -10 100 VBE(SAT) (V) DC Current Gain, hFE VCE=-10V 10 1 -1 -10 -100 -1000 Collector Current, IC (mA) I C=10*I B -1.0 -0.1 -0.01 -1 Collector-Emitter Saturation Voltage VCE(SAT) (V) I C=10*I B -1.0 -0.1 -0.01 -1 -10 -100 Collector Current, I C (mA) Collector Output Capacitance Collector Output Capacitance (pF) -10 -10 -100 -1000 Collector Current, IC (mA) 1000 I E=0, f=1MHz 100 10 1 -0.1 -1 -10 -100 Collector Base Voltage (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R201-021,B