UTC PZTA42/43 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC PZTA42/43 are high voltage transistors, designed for telephone switch and high voltage switch. 2 1 FEATURES 3 *Collector-Emitter voltage: VCEO=300V(UTC PZTA42) VCEO=200V(UTC PZTA43) *High current gain *Complement to UTC PZTA92/93 *Collector Power Dissipation: Pc(max)=1000mW 4 SOT-223 1:EMITTER 2,4:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) PARAMETER SYMBOL VALUE VCBO 300 200 VCEO 300 200 6 1000 500 150 -55 ~ +150 Collector-Base Voltage UTC PZTA42 UTC PZTA43 Collector-Emitter Voltage UTC PZTA42 UTC PZTA43 Emitter-Base Voltage Collector Power Dissipation Collector Current Junction Temperature Storage Temperature UNIT V V VEBO Pc Ic Tj TSTG V mW mA °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage UTC PZTA42 UTC PZTA43 Collector-Emitter Breakdown Voltage UTC PZTA42 UTC PZTA43 Emitter-Base Breakdown Voltage BVCBO Ic=100µA,IE=0 UTC BVCEO BVEBO MIN TYP MAX UNIT 300 200 V 300 200 6 V Ic=1mA,IB=0 IE=100µA,Ic=0 V UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R207-005,B UTC PZTA42/43 NPN EPITAXIAL SILICON TRANSISTOR PARAMETER SYMBOL Collector Cut-Off Current UTC PZTA42 UTC PZTA43 Emitter Cut-Off Current UTC PZTA42 UTC PZTA43 DC Current Gain(note) TEST CONDITIONS MIN TYP MAX UNIT VCB=200V,IE=0 VCB=160V,IE=0 100 100 nA VBE=6V,Ic=0 VBE=4V,Ic=0 VCE=10V,Ic=1mA VCE=10V,Ic=10mA VCE=10V,Ic=30mA Ic=20mA,IB=2mA Ic=20mA,IB=2mA VCE=20V,Ic=10mA, f=100MHz VCB=20V,IE=0 f=1MHz 100 100 nA ICBO IEBO hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product VCE(sat) VBE(sat) fT Collector Base Capacitance UTCPZTA42 UTCPZTA43 Ccb 80 80 80 300 0.2 0.90 V V MHz 3 4 pF 50 TYPICAL PERFORMANCE CHARACTERISTICS Fig.1 DC Current Gain Fig.2 Saturation Voltage 1 10 VCE=10V VCE(sat),VBE(sat) (V) DC current Gain,H FE 3 10 2 10 1 10 0 10 10 0 10 1 10 Ic=10*IB -1 10 VCE(sat) -2 10 2 VBE(sat) 0 10 10 -1 Collector current, Ic(mA) 10 0 10 1 10 2 10 3 Collector current, Ic(mA) Fig.4 Current Gain Bandwidth product Fig.3 Capacitance 2 10 3 10 Current gain bandwidth product(MHz) IE=0 f=1MHz 1 10 -1 10 10 0 10 1 Collector-Base voltage(V) UTC 10 2 VCE=20V 2 10 1 10 10 0 10 1 10 2 Collector current, Ic(mA) UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R207-005,B UTC PZTA42/43 NPN EPITAXIAL SILICON TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R207-005,B