UNISONIC TECHNOLOGIES CO., LTD UF740 MOSFET 10A, 400V, 0.55 OHM, N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UF740 power MOSFET is designed for high voltage, high speed power switching applications such as switching power supplies, switching adaptors etc. FEATURES 1 * 10A, 400V, RDS(ON)(0.55Ω) * Single Pulse Avalanche Energy Rated * Rugged - SOA is Power Dissipation Limited * Fast Switching TO-220F *Pb-free plating product number: UF740L SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Order Number Package Normal Lead Free Plating UF740-TA3-T UF740L-TA3-T TO-220 UF740-TF3-T UF740L-TF3-T TO-220F Note: Pin Assignment: G: GATE D: DRAIN S: SOURCE Pin Assignment 1 2 3 G D S G D S Packing Tube Tube UF740L-TA3-T (1)Packing Type (2)Package Type (3)Lead Plating www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd (1) T: Tube (2) TA3: TO-220, TF3: TO-220F (3) L: Lead Free Plating, Blank: Pb/Sn 1 of 6 QW-R502-078,A UF740 MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25℃, Unless Otherwise Specified) PARAMETER Drain to Source Voltage (TJ =25℃~125℃) Drain to Gate Voltage (RGS = 20kΩ) (TJ =25℃~125℃) Gate to Source Voltage Continuous TC = 100℃ Drain Current Pulsed SYMBOL VDS VDGR VGS ID ID IDM Maximum Power Dissipation Derating above 25℃ PD RATINGS 400 400 ±20 10 6.3 40 125 UNIT V V V A A A W 1.0 W/℃ Single Pulse Avalanche Energy Rating 520 mJ EAS (VDD=50V, starting TJ =25℃, L=9.1µH, RG=25Ω, peak IAS = 10A) Operating Temperature Range TOPR -55 ~ +150 ℃ Storage Temperature Range TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL DATA PARAMETER Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case SYMBOL θJA θJc RATINGS 62.5 1.0 UNIT ℃/W ELECTRICAL CHARACTERISTICS (TC =25℃, Unless Otherwise Specified.) PARAMETER Drain to Source Breakdown Voltage Gate to Threshold Voltage On-State Drain Current (Note 1) Zero Gate Voltage Drain Current Gate to Source Leakage Current Drain to Source On Resistance (Note 1) Forward Transconductance (Note 1) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) Gate to Source Charge Gate to Drain “Miller” Charge Input Capacitance Output Capacitance Reverse - Transfer Capacitance SYMBOL TEST CONDITIONS BVDSS VGS = 0V, ID = 250µA VGS(THR) VGS = VDS, ID = 250µA ID(ON) VDS >ID(ON) x RDS(ON)MAX, VGS =10V VDS = Rated BVDSS, VGS = 0V IDSS VDS=0.8 x Rated BVDSS, VGS=0V,TJ=125℃ IGSS VGS = ±20V RDS(ON) VGS = 10V, ID = 5.2A gFS VDS ≥ 50V, ID = 5.2A tDLY(ON) tR tDLY(OFF) tF QG(TOT) QGS QGD CISS COSS CRSS VDD = 200V, ID ≈ 10A, RGS = 9.1Ω, RL = 20Ω, VGS = 10V MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = 10V, ID = 10A VDS = 0.8 x Rated BVDSS IG(REF) = 1.5mA Gate Charge is Essentially Independent of Operating Temperature VGS = 0V, VDS =25V, f = 1.0MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 400 V 2.0 10 5.8 4.0 25 250 ±500 V A µA µA nA 0.47 0.55 Ω 8.9 S 15 25 52 25 21 41 75 36 ns ns ns ns 41 63 nC 6.5 nC 23 nC 1250 300 80 pF pF pF 2 of 6 QW-R502-078,A UF740 MOSFET ELECTRICAL CHARACTERISTICS(Cont.) SOURCE TO DRAIN DIODE SPECIFICATIONS Source to Drain Diode Voltage TJ = 25℃, ISD = 10A, VGS = 0V VSD (Note 1) Modified MOSFET Continuous Source to Drain IS Symbol Showing Current the Integral Pulse Source to Drain Current Reverse P-N (Note 2) Junction Diode G ISM D S TJ = 25℃, ISD = 10A, dISD/dt = 100A/µs Reverse Recovery Time tRR TJ = 25℃, ISD = 10A, dISD/dt = 100A/µs Reverse Recovery Charge QRR NOTES: 1. Pulse Test: Pulse width ≤ 300µs, Duty Cycle≤2%. 2. Repetitive rating: Pulse width limited by maximum junction temperature. 3. VDD = 50V, starting TJ = 25℃, L = 3.37mH, RG = 25Ω, peak IAS = 10A. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 170 1.6 390 4.5 2.0 V 10 A 40 A 790 8.2 ns µC 3 of 6 QW-R502-078,A UF740 MOSFET TEST CIRCUITS AND WAVEFORMS VDS BVDSS L RG VDS VDD IAS VDD D.U.T. 0 0.01Ω tp tAV IAS Figure 1A. Unclamped Energy Test Circuit Figure 1B. Unclamped Energy Waveforms VDS 90% RL 10% 0 RG 90% VDD VGS D.U.T. VGS 50% 10% 0 tD(ON) 50% PULSE WIDTH tR t D(OFF) t F t OFF tON Figure 2B. Resistive Switching Waveforms Figure 2A. Switching Time Test Circuit VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY VDD SAME TYPE AS DUT 50kΩ Q G(TOT) QGS 0.3µF 0.2µF Q GD VGS D VDS DUT G 0 IG(REF) IG CURRENT SAMPLING RESISTOR S IG(REF) I D CURRENT SAMPLING RESISTOR Figure 3A. Gate Charge Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0 0 Figure 3B. Gate Charge Waveforms 4 of 6 QW-R502-078,A UF740 MOSFET TYPICAL PERFORMANCE CUVES (Unless Otherwise Specified) Output Characteristics Forward Bias Safe Operating Area 100 15 1ms OPERATION IN THIS 1 REGION IS LIMITED BY RDS(ON) TC=25℃ TJ=MAX RATED SINGLE PULSE 15 1 10ms DC 10 102 VGS = 5.5V 9 VGS = 5.0V 6 VGS = 4.5V 3 0 103 0 80 40 120 Saturation Characteristics Transfer Characteristics VGS=10V 100 VGS=6.0V VGS=5.5V 9 VGS=5.0V 6 VGS=4.5V 3 4 2 6 8 10 200 160 Drain to Source Voltage, VDS (V) VGS=4.0V PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX VDS≥50V 10 0.1 T J = 25℃ T J = 150℃ 1 2 0 4 8 6 10 Drain to Source Voltage, VDS (V) Gate to Source Voltage, VSD (V) Normalized Drain to Source Breakdown Voltage vs. Junction Temperature Capacitance vs. Drain to Source Voltage 1.25 2500 I D=250μA 1.15 Capacitance, C (pF) Normalized Drain to Source Breakdown Voltage 12 Drain to Source Voltage, VDS (V) PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX 0 PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX VGS = 10V VGS = 6.0V VGS = 4.0V 12 0 Drain Current, I D (A) 10 0.1 Drain Current, ID (A) 100μs Drain to Source Current, IDS (ON) (A) Drain Current, I D (A) 10μs 1.05 0.95 0.85 0.75 -60 -40 -20 0 20 40 60 80 100120 140 160 Junction Temperature, T J (℃) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw VGS=0V, f=1MHz CISS=CGS+C GD CRSS=CGD COSS≈C DS+CGD 2000 1500 CISS 1000 CRSS 500 0 1 2 5 COSS 10 2 5 102 2 5 103 Drain to Source Voltage, VDS (V) 5 of 6 QW-R502-078,A UF740 MOSFET TYPICAL PERFORMANCE CUVES (Cont.) Source to Drain Diode Voltage Transconduce vs. Drain Current 100 PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX Source to Drain Current, ISD (A) Transconductance, g FS (S) 15 12 T J = 25℃ 9 TJ = 150℃ 6 3 0 0 4 8 12 16 PULSE DURATION=80μS DUTY CYCLE = 0.5% MAX 10 T J = 150℃ TJ = 25℃ 1.0 0.1 20 0 0.3 20 Pulse Duration=80μs Duty Cycle = 0.5% Max 3 VGS =10V 2 VGS=20V 1 0 25 10 20 30 Drain Current, I D (A) 1.2 1.5 Gate to Source Voltage vs. Gate Charge Gate to Source Voltage, VGS (V) Drain to Source on Resistance, R DS (ON) (Ω) Drain to Source on Resistance vs. Voltage and Drain Current 4 0.9 Source to Drain Voltage, VSD (V) Drain Current, ID (A) 5 0.6 40 50 I D=10A 16 VDS=80V 12 VDS=200V 8 VDS=320V 4 0 0 12 36 24 Gate Charge, Q G (nC) 48 60 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-078,A