UNISONIC TECHNOLOGIES CO., LTD UP1855 PNP SILICON TRANSISTOR HIGH CURRENT TRANSISTOR FEATURES * High current switching * Low VCE(SAT) * High hFE 1 SOT-223 *Pb-free plating product number: UP1855L ORDERING INFORMATION Order Number Normal Lead Free Plating UP1855-x-AA3-R UP1855L-x-AA3-R Package SOT-223 Pin Assignment 1 2 3 B C E Packing Tape Reel UP1855L-x-AA3-R (1)Packing Type (2)Package Type (3)Rank (4)Lead Plating www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd (1) R: Tape Reel (2) AA3: SOT-223 (3) refer to Classification of hFE2 (4) L: Lead Free Plating, Blank: Pb/Sn 1 of 4 QW-R207-011.D UP1855 PNP SILICON TRANSISTOR ABSOLUATE MAXIUM RATINGS (Ta = 25℃) PARAMETER SYMBOL RATINGS Collector -Base Voltage VCBO -180 Collector -Emitter Voltage VCEO -140 Emitter -Base Voltage VEBO -6 Collector Current (Pulse) ICM -10 Collector Current (DC) IC -4 Power Dissipation PD 1 Junction Temperature TJ +150 Storage Temperature TSTG -40 ~ +150 Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. UNIT V V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta= 25℃, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC = -100µA Collector-Emitter Breakdown Voltage BVCEO IC = -10mA Emitter-Base Breakdown Voltage BVEBO IE = -100µA VCB=-150V Collector Cut-off Current ICBO VCB=-150V, Ta=100°C Emitter Cut-off Current IEBO VEB=-6V IC=-100mA, IB=-5mA IC=-500mA, IB=-50mA Collector-Emitter Saturation Voltage VCE (SAT) IC=-1A, IB=-100mA IC=-3A, IB=-300mA Base-Emitter Saturation Voltage VBE (SAT) IC=-3A, IB=-300mA Base-Emitter Turn-On Voltage VBE (ON) IC=-3A, VCE=-5V hFE1 IC=-10mA, VCE=-5V hFE2 IC=-1A, VCE=-5V DC Current Gain hFE3 IC=-3A, VCE=-5V hFE4 IC=-10A, VCE=-5V Transition Frequency Output Capacitance fT Cob tON Switching Times tOFF Note: Pulse test: tP ≤ 300µs, Duty cycle ≤ 2% IC=-100mA, VCE=-10V, f=50MHz VCB=-20V, f=1MHz IC=-1A, VCC=-50V IB1=-100mA, IB2=100mA MIN -180 -140 -6 100 100 75 TYP -210 -170 -8 -30 -70 -110 -275 -970 -830 200 MAX -50 -1 -10 -60 -120 -150 -370 -1110 -950 UNIT V V V nA µA nA mV mV mV 300 140 10 110 40 68 1030 MHz pF ns ns CLASSIFICATION OF hFE2 RANK RANGE A 100 ~ 200 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw B 180 ~ 300 2 of 4 QW-R220-015.D UP1855 PNP SILICON TRANSISTOR TYPICAL CHARACTERISTICS Base-Emitter Turn-on Voltage vs. Collector Current +100℃ 300 DC Current Gain, hFE Base-Emitter Turn-on Voltage VBE(ON) DC Current Gain vs. Collector Current +25℃ 200 -40℃ 100 VCE = 5V 0 0.001 0.01 0.1 1 1.6 VCE = 5V 1.4 1.2 1.0 - 40℃ 0.8 + 25℃ 0.6 +100 ℃ 0.4 +150℃ 0.2 0 0. 001 10 1.2 1.0 0.8 IC / IB = 50 0.4 0.2 IC / IB =10 0.1 1 hFE=10 1.4 10 1.2 1.0 -40℃ 0.8 +25℃ 0.6 +150℃ 0.4 0.2 0 0.001 Collector Current, Ic (A) Coll ector Curr ent, Ic ( A) VBE(SAT) (V) Base-Emitter Saturation Voltage 1.4 1.2 0.4 10 Safe Operating Area hFE=10 0.6 1 10 1.6 0.8 0.1 0.01 Collector Current, Ic (A) Base-Emitter Saturation Voltage vs. Collector Current 1.0 10 1.6 VCE(SAT) (V) 1.4 Collector-Emitter Saturation Voltage Ta = 25℃ 1.6 VCE(SAT) (V) Collector-Emitter Saturation Voltage Collector Current 0.01 1 Collector-Emitter Saturation Voltage vs. Collector Current Collector-Emitter Saturation Voltage vs. 0 0.001 0.1 Collector Current, Ic (A) Collector Current, Ic (A) 0.6 0. 01 -40℃ +25℃ +100 ℃ 1s 100ms 10ms 1.0ms 0.1ms 1 D.C. 0.1 0.2 +150℃ 0 0.001 0.01 0.1 1 10 0 . 01 Collector Current, Ic (A) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 1 10 100 500 Collector Voltage , V CE (V) 3 of 4 QW-R220-015.D UP1855 PNP SILICON TRANSISTOR U TC assum es no responsibility for equipm ent failures that result from using products at v alues that ex ceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all UT C products described or contained herein. UT C products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. T he inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R220-015.D