CEP740G/CEB740G CEF740G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP740G 400V 0.55Ω 10A 10V CEB740G 400V 0.55Ω 10A 10V CEF740G 400V 0.55Ω 10A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G D G D S G S CEB SERIES TO-263(DD-PAK) G CEP SERIES TO-220 ABSOLUTE MAXIMUM RATINGS Parameter D S Tc = 25 C unless otherwise noted Limit Symbol TO-220/263 Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed S CEF SERIES TO-220F ID IDM a Maximum Power Dissipation @ TC = 25 C f PD - Derate above 25 C TO-220F 400 Units V ±30 V 10 10 e e A A 40 40 125 40 W 1.0 0.32 W/ C TJ,Tstg -55 to 150 C Symbol Limit Units Operating and Store Temperature Range Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case RθJC 1.0 3.1 C/W Thermal Resistance, Junction-to-Ambient RθJA 62.5 65 C/W This is preliminary information on a new product in development now . Details are subject to change without notice . 1 Rev 1. 2007.Nov. http://www.cetsemi.com CEP740G/CEB740G CEF740G Electrical Characteristics Parameter Tc = 25 C unless otherwise noted Symbol Test Condition Min Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA 400 Zero Gate Voltage Drain Current IDSS Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse Typ Max Units VDS = 400V, VGS = 0V 50 µA IGSSF VGS = 30V, VDS = 0V 100 nA IGSSR VGS = -30V, VDS = 0V -100 nA 4 V 550 mΩ Off Characteristics V On Characteristics b Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics VGS(th) VGS = VDS, ID = 250µA 2 RDS(on) VGS = 10V, ID = 6A 450 gFS VDS = 50V, ID = 6A 6 S 1245 pF 190 pF 25 pF c Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0 MHz Switching Characteristics c Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) VDD = 200V, ID = 10A, VGS = 10V, RGEN = 9.1Ω 20 40 ns 9 18 ns 50 100 ns Turn-Off Fall Time tf 8 16 ns Total Gate Charge Qg 35.6 47.3 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS = 320V, ID = 10A, VGS = 10V 6.7 nC 12 nC Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage IS f b VSD VGS = 0V, IS = 10A Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature . b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% . c.Guaranteed by design, not subject to production testing. d.Limited only by maximum temperature allowed . e.Pulse width limited by safe operating area . f.Full package IS(max) = 5.5A . 2 10 A 2 V CEP740G/CEB740G CEF740G 18 VGS=10,8,7,6V 5 ID, Drain Current (A) ID, Drain Current (A) 6 4 3 2 VGS=5V 1 0 0 1 2 3 4 5 25 C 3 1 2 -55 C 3 4 5 6 Figure 1. Output Characteristics Figure 2. Transfer Characteristics RDS(ON), Normalized RDS(ON), On-Resistance(Ohms) Ciss 1200 800 Coss 400 Crss 0 5 10 15 20 25 2.6 2.2 ID=6A VGS=10V 1.8 1.4 1.0 0.6 0.2 -100 -50 0 50 100 150 200 VDS, Drain-to-Source Voltage (V) TJ, Junction Temperature( C) Figure 3. Capacitance Figure 4. On-Resistance Variation with Temperature VDS=VGS ID=250µA 1.1 1.0 0.9 0.8 0.7 0.6 -50 TJ=125C VGS, Gate-to-Source Voltage (V) IS, Source-drain current (A) C, Capacitance (pF) VTH, Normalized Gate-Source Threshold Voltage 6 VDS, Drain-to-Source Voltage (V) 1600 1.2 9 6 2000 1.3 12 0 2400 0 15 -25 0 25 50 75 100 125 150 VGS=0V 10 1 10 0 10 -1 0.4 0.6 0.8 1.0 1.2 1.4 TJ, Junction Temperature( C) VSD, Body Diode Forward Voltage (V) Figure 5. Gate Threshold Variation with Temperature Figure 6. Body Diode Forward Voltage Variation with Source Current 3 10 10 VDS=320V ID=10A 6 4 2 0 0 2 RDS(ON)Limit 8 ID, Drain Current (A) VGS, Gate to Source Voltage (V) CEP740G/CEB740G CEF740G 10 20 30 100ms 10 1ms 10ms DC 10 10 40 1 0 TC=25 C TJ=150 C Single Pulse -1 10 0 10 1 10 2 10 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 7. Gate Charge Figure 8. Maximum Safe Operating Area VDD t on V IN RL D VGS RGEN toff tr td(on) td(off) tf 90% 90% VOUT VOUT 10% INVERTED 10% G 90% S VIN 50% 50% 10% PULSE WIDTH Figure 10. Switching Waveforms Figure 9. Switching Test Circuit r(t),Normalized Effective Transient Thermal Impedance 10 0 D=0.5 10 0.2 0.1 -1 0.05 0.02 0.01 10 10 PDM t1 Single Pulse -2 -3 10 t2 1. RθJC (t)=r (t) * RθJC 2. RθJC=See Datasheet 3. TJM-TC = P* RθJC (t) 4. Duty Cycle, D=t1/t2 -2 10 -1 10 0 10 1 10 2 Square Wave Pulse Duration (msec) Figure 11. Normalized Thermal Transient Impedance Curve 4 10 3 10 4 3