MCT6H / MCT62H Vishay Semiconductors Optocoupler, Phototransistor Output, Dual Channel Features • • • • 8 Current Transfer Ratio (CTR) of typical 100 % Isolation test voltage VISO = 5000 VRMS Low temperature coefficient of CTR Low coupling capacitance of typical 0.3 pF • Wide ambient temperature range • Lead-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals • UL1577, File No. E76222 System Code U, Double Protection 7 6 5 C 1 2 3 4 e3 17202_1 Pb Pb-free Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infraredemitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe, providing a fixed distance between input and output for highest safety requirements. Order Information Applications Part Galvanically separated circuits Non-interacting switches Remarks MCT6H CTR > 50 %, DIP-8 MCT62H CTR > 100 %, DIP-8 For additional information on the available options refer to Option Information. Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Test condition Reverse voltage Forward current Forward surge current tp ≤ 10 µs Power dissipation Junction temperature Symbol Value Unit VR 6 V IF 60 mA IFSM 1.5 A Pdiss 100 mW Tj 125 °C Output Symbol Value Unit Collector emitter voltage Parameter Test condition VCEO 70 V Emitter collector voltage VECO 7 V IC 50 mA ICM 100 mA Pdiss 150 mW Tj 125 °C Collector current Collector peak current Power dissipation Junction temperature Document Number 83525 Rev. 1.4, 26-Oct-04 tp/T = 0.5, tp ≤ 10 ms www.vishay.com 1 MCT6H / MCT62H Vishay Semiconductors Coupler Parameter AC isolation test voltage (RMS) Test condition t = 1 min Symbol Value Unit 1) 5000 VRMS VISO Total power dissipation Ptot 250 mW Ambient temperature range Tamb - 40 to + 100 °C Storage temperature range Tstg - 55 to + 125 °C Tsld 260 °C Soldering temperature 1) 2 mm from case, t ≤ 10 s Related to standard climate 23/50 DIN 50014 Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Parameter Forward voltage Test condition IF = 50 mA Symbol Min VF Typ. Max Unit 1.25 1.6 V Typ. Max Unit Output Symbol Min Collector emitter voltage Parameter IC = 1 mA Test condition VCEO 70 V Emitter collector voltage IE = 100 µA VECO 7 V Collector dark current VCE = 20 V, IF = 0, E = 0 ICEO 100 nA Coupler Symbol Min DC isolation test voltage Parameter t=2s VISO1) 5000 Isolation resistance VIO = 1000 V, 40 % relative humidity RIO 1) Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat Cut-off frequency IF = 10 mA, VCE = 5 V, RL = 100 Ω fC 100 kHz Coupling capacitance f = 1 MHz Ck 0.3 pF 1) Test condition Typ. Max Unit VRMS Ω 1012 0.3 V Related to standard climate 23/50 DIN 50014 Current Transfer Ratio Parameter IC/IF www.vishay.com 2 Part Symbol Min Typ. VCE = 5 V, IF = 5 mA Test condition MCT6H CTR 50 100 Max Unit % VCE = 5 V, IF = 10 mA MCT6H CTR 60 120 % VCE = 5 V, IF = 5 mA MCT62H CTR 100 200 % Document Number 83525 Rev. 1.4, 26-Oct-04 MCT6H / MCT62H Vishay Semiconductors Switching Characteristics Test condition Symbol Delay time Parameter VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) td Min Typ. 3.0 Max µs Rise time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) tr 3.0 µs Fall time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) tf 4.7 µs Storage time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) ts 0.3 µs Turn-on time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) ton 6.0 µs Turn-off time VS = 5 V, IC = 2 mA, RL = 100 Ω (see figure 1) toff 5.0 µs IF IC = 2 mA; adjusted through input amplitude RG = 50 W tp = 0.01 T tp = 50 Ps Channel I Channel II 50 W 100 W Oscilloscope RL = 1 MW CL = 20 pF 96 11698 0 IC +5V IF IF 0 tp t 100% 90% 10% 0 tp td tr ton (= td + tr) 95 10804 Unit Figure 1. Test circuit, non-saturated operation tr td ton ts pulse duration delay time rise time turn-on time ts tf toff (= ts + tf) t tf toff storage time fall time turn-off time Figure 2. Switching Times Typical Characteristics (Tamb = 25 °C unless otherwise specified) 1000 Coupled device 250 I F - Forward Current ( mA ) P tot –Total Power Dissipation ( mW) 300 200 Phototransistor 150 IR-diode 100 50 0 10 1 0.1 0 96 11700 100 40 80 120 Tamb – Ambient Temperature( °C ) Figure 3. Total Power Dissipation vs. Ambient Temperature Document Number 83525 Rev. 1.4, 26-Oct-04 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 96 11862 V F - Forward Voltage ( V ) Figure 4. Forward Current vs. Forward Voltage www.vishay.com 3 MCT6H / MCT62H 100.0 1.5 1.3 1.2 1.1 1.0 0.9 0.8 0.7 2mA 1.0 1mA 96 11930 V CE=20V I F=0 1000 100 10 1 0 10 20 30 40 50 60 70 80 90 100 Tamb – Ambient Temperature (°C ) 96 11928 V CE=5V 10.00 1.00 0.10 1.0 10.0 Figure 7. Collector Current vs. Forward Current www.vishay.com 0.8 CTR=50% 0.7 0.6 20% 0.5 0.4 0.3 0.2 10% 0.1 0.0 1 10 100 I C – Collector Current ( mA ) 1000 V CE=5V 100 10 1 0.1 100.0 I F – Forward Current ( mA ) 96 11929 0.9 Figure 9. Collector Emitter Saturation Voltage vs. Collector Current CTR – CurrentTransfer Ratio ( % ) 100.00 0.01 0.1 1.0 96 11993 Figure 6. Collector Dark Current vs. Ambient Temperature 1.0 10.0 100.0 VCE – Collector Emitter Voltage ( V ) Figure 8. Collector Current vs. Collector Emitter Voltage VCEsat – Collector Emitter SaturationVoltage (V ) 10000 ICEO– Collector Dark Current, with open Base ( nA ) 5mA 0.1 0.1 Figure 5. Relative Current Transfer Ratio vs. Ambient Temperature IC – Collector Current ( mA) 10mA 10.0 0.6 0.5 –30 –20 –10 0 10 20 30 40 50 60 70 80 96 11927 Tamb – Ambient Temperature (°C ) 4 20mA IF=50mA V CE=5V I F=5mA 1.4 IC – Collector Current ( mA ) CTR rel – Relative Current Transfer Ratio Vishay Semiconductors 96 11994 1.0 10.0 100.0 I F – Forward Current ( mA ) Figure 10. Current Transfer Ratio vs. Forward Current Document Number 83525 Rev. 1.4, 26-Oct-04 MCT6H / MCT62H Vishay Semiconductors ton / toff –Turn on / Turn off Time ( µ s ) Figure 11. Turn on / off Time vs. Collector Current 96 11995 10 Non saturated operation V S=5V RL=100 Ω 8 6 ton 4 toff 2 0 0 1 2 3 4 5 6 7 8 9 I C – Collector Current ( mA ) 10 Package Dimensions in mm 14784 Document Number 83525 Rev. 1.4, 26-Oct-04 www.vishay.com 5 MCT6H / MCT62H Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 6 Document Number 83525 Rev. 1.4, 26-Oct-04 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1