ZXTD2M832 MPPS™ Miniature Package Power Solutions DUAL 20V PNP LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO= -20V; RSAT = 64m ; IC= -3.5A DESCRIPTION Packaged in the innovative 3mm x 2mm MLP (Micro Leaded Package) outline, these new 4th generation low saturation dual transistors offer extremely low on state losses making them ideal for use in DC-DC circuits and various driving and power management functions. Additionally users gain several other key benefits: Performance capability equivalent to much larger packages Improved circuit efficiency & power levels 3mm x 2mm (Dual die) MLP PCB area and device placement savings Lower package height (nom 0.9mm) C2 Reduced component count C1 FEATURES • Low Equivalent On Resistance B2 • Extremely Low Saturation Voltage (-220mV @ -1A) B1 • hFE characterised up to -6A • IC = -3.5A Continuous Collector Current • 3mm x 2mm MLP E2 E1 APPLICATIONS • DC - DC Converters (FET Drivers) • Charging circuits • Power switches PINOUT • Motor control • LED Backlighting circuits ORDERING INFORMATION DEVICE REEL TAPE WIDTH QUANTITY PER REEL ZXTD2M832TA 7 ⴕⴕ 8mm 3000 ZXTD2M832TC 13ⴕ ⴕ 8mm 10000 3mm x 2mm MLP underside view DEVICE MARKING D22 ISSUE 2 - JANUARY 2007 1 ZXTD2M832 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage V CBO LIMIT UNIT -25 V Collector-Emitter Voltage Emitter-Base Voltage V CEO -20 V V EBO -7.5 Peak Pulse Current I CM V -6 A Continuous Collector Current (a)(f) IC -3.5 A Base Current IB -1000 mA Power Dissipation at TA=25°C (a)(f) Linear Derating Factor PD 1.5 12 W mW/°C Power Dissipation at TA=25°C (b)(f) Linear Derating Factor PD 2.45 19.6 W mW/°C Power Dissipation at TA=25°C (c)(f) Linear Derating Factor PD 1 8 W mW/°C Power Dissipation at TA=25°C (d)(f) Linear Derating Factor PD 1.13 9 W mW/°C Power Dissipation at TA=25°C (d)(g) Linear Derating Factor PD 1.7 13.6 W mW/°C Power Dissipation at TA=25°C (e)(g) Linear Derating Factor PD 3 24 W mW/°C Operating and Storage Temperature Range T j :T stg -55 to +150 °C VALUE UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a)(f) R θJA 83.3 °C/W Junction to Ambient (b)(f) R θJA 51 °C/W Junction to Ambient (c)(f) R θJA 125 °C/W Junction to Ambient (d)(f) R θJA 111 °C/W Junction to Ambient (d)(g) R θJA 73.5 °C/W Junction to Ambient (e)(g) R θJA 41.7 °C/W Notes (a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with minimal lead connections only. (d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions with all exposed pads attached attached. The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device. (f) For a dual device with one active die. (g) For dual device with 2 active die running at equal power. (h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph. (i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW. ISSUE 2 - JANUARY 2007 2 ZXTD2M832 TYPICAL CHARACTERISTICS 3.5 VCE(SAT) Limited 1 Max Power Dissipation (W) IC Collector Current (A) 10 DC 1s 100ms 0.1 10ms 1ms Note (a)(f) 0.01 100us Single Pulse, Tamb=25°C 0.1 1 10 2.5 1.0 0.5 0.0 0 Thermal Resistance (°C/W) Thermal Resistance (°C/W) D=0.5 40 Single Pulse D=0.05 D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) PD Dissipation (W) 2.5 2.0 2oz copper Note (g) Continuous 2oz copper Note (f) 1.5 1.0 1oz copper Note (f) 0.5 0.0 0.1 1 75 100 125 150 225 200 175 150 125 100 75 50 25 0 0.1 1oz copper Note (f) 1oz copper Note (g) 2oz copper Note (f) 2oz copper Note (g) 1 10 100 Thermal Resistance v Board Area 3.5 Tamb=25°C 50 Board Cu Area (sqcm) Transient Thermal Impedance 3.0 Tj max=150°C 25 Derating Curve 60 0 100µ 1oz Cu Note (d)(f) Temperature (°C) Note (a)(f) D=0.2 1oz Cu Note (d)(g) 1.5 Safe Operating Area 20 2oz Cu Note (a)(f) 2.0 VCE Collector-Emitter Voltage (V) 80 Tamb=25°C 2oz Cu Note (e)(g) 3.0 1oz copper Note (g) 10 100 Board Cu Area (sqcm) Power Dissipation v Board Area ISSUE 2 - JANUARY 2007 3 ZXTD2M832 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. Collector-Base Breakdown Voltage V (BR)CBO -25 Collector-Emitter Breakdown Voltage V (BR)CEO Emitter-Base Breakdown Voltage V (BR)EBO Collector Cut-Off Current I CBO Emitter Cut-Off Current I EBO Collector Emitter Cut-Off Current I CES Collector-Emitter Saturation Voltage V CE(sat) UNIT CONDITIONS. -35 V I C =-100A -20 -25 V I C =-10mA* -7.5 8.5 V I E =-100A -25 nA V CB =-20V -25 nA V EB =-6V -25 nA V CES =-16V -19 -30 mV -170 -220 mV I C =-0.1A, I B =-10mA* I C =-1A, I B =-20mA* -190 -250 mV -240 -350 mV I C =-1.5A, I B =-50mA* I C =-2.5A, I B =-150mA* -300 mV I C =-3.5A, I B =-350mA* -225 Base-Emitter Saturation Voltage V BE(sat) -1.01 Base-Emitter Turn-On Voltage V BE(on) -0.87 Static Forward Current Transfer Ratio h FE Transition Frequency fT 300 475 300 450 150 230 15 30 150 180 MAX. -1.075 V -0.95 V I C =-3.5A, I B =350mA* I C =-3.5A, V CE =-2V* I C =-10mA, V CE =-2V* I C =-0.1A, V CE =-2V* I C =-2A, V CE =-2V* 30 MHz I C =-6A, V CE =-2V* I C =-50mA, V CE =-10V f=100MHz Output Capacitance C obo 21 pF V CB =10V, f=1MHz Turn-On Time t (on) 40 ns Turn-Off Time t (off) 670 ns V CC =-10V, I C =1A I B1 =I B2 =20mA *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% ISSUE 2 - JANUARY 2007 4 ZXTD2M832 TYPICAL CHARACTERISTICS 1 0.25 IC/IB=50 Tamb=25°C 0.20 VCE(SAT) (V) VCE(SAT) (V) 100°C 100m IC/IB=100 IC/IB=50 10m -55°C 10m 100m 1 0.00 1m 10 IC Collector Current (A) VCE(SAT) v IC VCE=2V 100°C 630 1.0 360 270 0.4 180 -55°C 0.2 90 10m 100m 0 10 1 hFE v IC VBE(ON) (V) 10 1 10 IC/IB=50 VCE=2V -55°C 0.6 25°C 0.4 100°C 10m 100m 1 IC Collector Current (A) -55°C 0.6 25°C 100°C 0.4 10m 100m IC Collector Current (A) VBE(SAT) v IC 0.8 0.2 1m 1 0.8 1m IC Collector Current (A) 1.0 VBE(SAT) (V) 450 25°C 0.6 0.0 1m 100m 540 1.0 0.8 10m IC Collector Current (A) VCE(SAT) v IC Typical Gain (hFE) Normalised Gain 1.4 1.2 25°C 0.10 0.05 IC/IB=10 1m 0.15 10 VBE(ON) v IC ISSUE 2 - JANUARY 2007 5 ZXTD2M832 MLP832 PACKAGE OUTLINE (3mm x 2mm Micro Leaded Package) CONTROLLING DIMENSIONS IN MILLIMETRES APPROX. CONVERTED DIMENSIONS IN INCHES MLP832 PACKAGE DIMENSIONS MILLIMETRES DIM INCHES MILLIMETRES DIM MAX. MIN. MAX. A 0.80 1.00 0.031 0.039 A1 0.00 0.05 0.00 0.002 E A2 0.65 0.75 0.0255 0.0295 E2 0.43 0.63 0.017 A3 0.15 0.25 0.006 0.0098 E4 0.16 0.36 0.006 0.014 b 0.24 0.34 0.009 0.013 L 0.20 0.45 0.0078 0.0157 b1 0.17 0.30 0.0066 0.0118 L2 0.125 0.00 0.005 D 3.00 BSC e 0.118 BSC D2 0.82 1.02 0.032 0.040 D3 1.01 1.21 0.0397 0.0476 MIN. r ⍜ MAX. INCHES MIN. 0.65 REF 2.00 BSC 0.075 BSC 0⬚ 12⬚ MIN. MAX. 0.0256 BSC 0.0787 BSC 0.0249 0.0029 BSC 0⬚ 12⬚ © Zetex Semiconductors plc 2007 Europe Americas Asia Pacific Corporate Headquarters Zetex GmbH Balan-straße 59 D-81541 München Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY11788 Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 [email protected] USA Telephone: (631) 360 2222 Fax: (631) 360 8222 [email protected] Zetex (Asia) Ltd 3701-04 Metroplaza, Tower 1 Hing Fong Road Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 [email protected] Zetex Semiconductors plc Zetex Technology Park Chadderton Oldham, OL9 9LL United Kingdom Tel: (44) 161 622 4444 Fax: (44) 161 622 4446 [email protected] These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 2 - JANUARY 2007 6