CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLDM303N-M832DS is a dual enhancement-mode N-Channel silicon MOSFET designed for high speed pulsed amplifier and driver applications. This energy efficient MOSFET offers beneficially low rDS(ON), low gate charge, and low threshold voltage. MARKING CODE: C330 TLM832DS CASE APPLICATIONS: FEATURES: • DC-DC converters • Drive circuits • Power management • Low rDS(ON) (0.078Ω MAX @ VGS=2.5V) • High current (ID=3.6A) • Low gate charge MAXIMUM RATINGS: (TA=25°C) Drain-Source Voltage SYMBOL VDS Gate-Source Voltage Continuous Drain Current (Steady State) Maximum Pulsed Drain Current, tp=10μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance (Note 1) VGS ID 30 UNITS V 12 V 3.6 A IDM PD 14.4 A 1.65 W TJ, Tstg ΘJA -55 to +150 °C 76 °C/W ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP MAX IGSSF, IGSSR VGS=12V, VDS=0 10 IDSS BVDSS VDS=20V, VGS=0 VGS=0, ID=250μA 30 VGS(th) VGS=VDS, ID=250μA 0.6 1.2 V rDS(ON) VGS=4.5V, ID=1.8A 0.033 0.04 Ω rDS(ON) VGS=2.5V, ID=1.8A VDD=10V, VGS=4.5V, ID=3.6A VDD=10V, VGS=4.5V, ID=3.6A 0.042 0.078 Ω 5.0 13 nC 0.9 1.4 nC VDD=10V, VGS=4.5V, ID=3.6A VDS=5.0V, ID=3.6A 1.0 2.7 nC Qg(tot) Qgs Qgd gFS Crss Ciss Coss ton toff VDS=10V, VGS=0, f=1.0MHz VDS=10V, VGS=0, f=1.0MHz VDS=10V, VGS=0, f=1.0MHz VDD=10V, VGS=4.0V, ID=3.6A, RG=10Ω VDD=10V, VGS=4.0V, ID=3.6A, RG=10Ω Notes: (1) FR-4 Epoxy PCB with copper mounting pad area of 54mm2 1.0 UNITS μA μA V 11.8 S 55 pF 590 pF 50 pF 15 ns 29 ns R2 (8-October 2012) CTLDM303N-M832DS SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET TLM832DS CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Gate Q1 2) Source Q1 3) Gate Q2 4) Source Q2 5) 6) 7) 8) Drain Drain Drain Drain Q2 Q2 Q1 Q1 MARKING CODE: C330 R2 (8-October 2012) w w w. c e n t r a l s e m i . c o m