Cree® EZ1400™ Gen II LEDs Data Sheet CxxxEZ1400-Sxx000-2 Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary optical design and device submount technology to deliver superior value for highintensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method. These vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications such as general illumination, automotive lighting, projection displays and camera flash. FEATURES APPLICATIONS ● ● EZBright LED Technology » 800 mW min. @ 1000 mA - 450 & 460 nm » Aircraft » Decorative Lighting Eutectic Attach » Task Lighting Low Forward Voltage » Outdoor Illumination ● Lambertian Radiation ● Conductive Epoxy, Solder Paste or Preforms, or Flux ● General Illumination ● Dielectric Passivation across Epi Surface ● White LEDs ● Projection Displays ● Automotive ● Camera Flash CxxxEZ1400-Sxx000-2 Chip Diagram Die Cross Section Top View .CPR3EK Rev Data Sheet: 1380 x 1380 μm Bottom View Anode (+) AuSn Mesa (Junction) 1350 x 1350 μm Thickness 170 μm Cathodes (-) 150 x 150 μm Subject to change without notice. www.cree.com 1 Maximum Ratings at TA = 25°C Note 1 CxxxEZ1400-Sxx000-2 DC Forward Current 1500 mA Peak Forward Current (1/10 duty cycle @ 1 kHz) 1500 mA LED Junction Temperature 145°C Reverse Voltage 5V Operating Temperature Range -40°C to +100°C Storage Temperature Range -40°C to +125°C Typical Electrical/Optical Characteristics at TA = 25°C, If = 1000 mA Part Number Forward Voltage (Vf, V) Note 2 Reverse Current [I(Vr=5V), μA] Full Width Half Max (λD, nm) Min. Typ. Max. Max. Typ. C450EZ1400-Sxx000-2 3.3 3.7 4.3 2 20 C460EZ1400-Sxx000-2 3.3 3.7 4.3 2 21 Mechanical Specifications CxxxEZ1400-Sxx000-2 Description Dimensions Tolerance P-N Junction Area (μm) 1350 x 1350 ± 35 Chip Area (μm) 1380 x 1380 ± 35 170 ± 25 Chip Thickness (μm) Top Au Bond Pad (μm) - Qty. 2 150 x 150 ± 25 3.0 ± 1.5 1380 x 1380 ± 35 3.0 ± 1.5 Au Bond Pad Thickness (μm) Back Contact Metal Area (μm) Back Contact Metal Thickness (μm) Notes: 1. 2. Maximum ratings are package-dependent. The above ratings were determined using a 3.45 x 3.45 mm SMT package without an encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds). See Cree EZBright Applications Note for assembly-process information. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 1000 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics were measured in an integrating sphere using Illuminance E. Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ1400 and EZ are trademarks of Cree, Inc. 2 CPR3EK Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com Standard Bins for CxxxEZ1400-Sxx000-2 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ1400-Sxx000-2) orders may be filled with any or all bins (CxxxEZ1400-0xxx-2) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 1000 mA. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant. Radiant Flux C450EZ1400-S80000-2 C450EZ1400-0217-2 C450EZ1400-0218-2 C450EZ1400-0219-2 C450EZ1400-0220-2 C450EZ1400-0213-2 C450EZ1400-0214-2 C450EZ1400-0215-2 C450EZ1400-0216-2 C450EZ1400-0209-2 C450EZ1400-0210-2 C450EZ1400-0211-2 C450EZ1400-0212-2 C450EZ1400-0205-2 C450EZ1400-0206-2 C450EZ1400-0207-2 C450EZ1400-0208-2 1250 mW 1100 mW 950 mW 800 mW 445 nm 447.5 nm 450 nm Dominant Wavelength 452.5 nm 455 nm Radiant Flux C460EZ1400-S80000-2 C460EZ1400-0217-2 C460EZ1400-0218-2 C460EZ1400-0219-2 C460EZ1400-0220-2 C460EZ1400-0213-2 C460EZ1400-0214-2 C460EZ1400-0215-2 C460EZ1400-0216-2 C460EZ1400-0209-2 C460EZ1400-0210-2 C460EZ1400-0211-2 C460EZ1400-0212-2 C460EZ1400-0205-2 C460EZ1400-0206-2 C460EZ1400-0207-2 C460EZ1400-0208-2 1250 mW 1100 mW 950 mW 800 mW 455 nm 457.5 nm 460 nm Dominant Wavelength 462.5 nm Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ1400 and EZ are trademarks of Cree, Inc. 3 CPR3EK Rev. - 465 nm Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com DW Shif 3 2 1 0 Characteristic Curves, TA = 25°C 25 50 75 100 125 150 Junction Temperature (°C) This is a representative measurement for the EZ1400 LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Relative Light Intensity vs. Junction Temperature Forward Current vs. Forward Voltage 1.00 Relative Light Intensity (%) 1500 If (mA) 1250 1000 750 500 250 0 0 1 2 3 4 0.95 0.90 0.85 0.80 0.75 0.70 0.65 0.60 25 5 50 75 100 125 150 Junction Temperature (°C) (V)Forward Current Relative Intensity Vf vs. 125% 150% 100% 125% 75% 100% 50% 75% 25% 50% 0% 25% 0 Dominant Wavelength Shift vs. Junction Temperature Relative Intensity vs. Forward Current 6 5 DW Shift (nm) % Relative % Relative IntensityIntensity 150% 250 500 750 1000 1250 0 250 500 750 3 2 1 1500 If (mA) 0% 4 0 1000 1250 25 1500 50 If (mA) 2 3 1.5 2.5 1 2 0.5 1.5 0 1 -0.5 0.5 0 250 500 750 1000 1250 1500 If (mA) 0 250 500 750 If (mA) 1000 1250 1500 Voltage Shift Relative Light Intensity (%) (V) Shift (nm) DW ShiftDW (nm) Relative -0.050 Wavelength Shift vs. Forward Current -1 150 Light Intensity vs. Junction Temperature 1.00 -0.100 0.95 -0.150 0.90 -0.200 0.85 -0.250 0.80 0.75 -0.300 0.70 -0.350 0.65 25 50 75 0.60 25 50 125 150 Junction Temperature (°C) 75 100 125 CPR3EK Rev. - 100 150 Junction Temperature (°C) Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ1400 and EZ are trademarks of Cree, Inc. 4 125 0.000 3 2.5 -0.5 100 Voltage Shift vs. Junction Temperature Wavelength Shift vs. Forward Current -1 0 75 Junction Temperature (°C) Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com Radiation Pattern This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for each chip. Copyright © 2010 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ1400 and EZ are trademarks of Cree, Inc. 5 CPR3EK Rev. - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5778 www.cree.com