Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN Heterojunction Bipolar Transistor Technology (InGaP HBT) MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a general purpose amplifier that is internally input matched and internally output prematched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 40 to 3600 MHz such as cellular, PCS, BWA, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF. 40--3600 MHz, 20 dB 24 dBm InGaP HBT Features • Frequency: 40--3600 MHz • P1dB: 24 dBm @ 900 MHz • Small--Signal Gain: 20 dB @ 900 MHz • Third Order Output Intercept Point: 40.5 dBm @ 900 MHz • Single Voltage Supply • Internally Matched to 50 Ohms • Cost--effective SOT--89 Surface Mount Package • In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel. Table 1. Typical Performance (1) 3 CASE 1514--02, STYLE 1 SOT--89 PLASTIC Table 2. Maximum Ratings Characteristic Symbol 900 MHz 2140 MHz 3500 MHz Unit Small--Signal Gain (S21) Gp 20 16.9 12 dB --15 12 Input Return Loss (S11) IRL --14.1 --11.2 dB Output Return Loss (S22) ORL --9.3 --14.5 --10.2 dB Power Output @1dB Compression P1dB 24 23.3 20.5 dBm Third Order Output Intercept Point OIP3 40.5 40 37 dBm Rating Symbol Value Unit Supply Voltage VCC 7 V Supply Current ICC 400 mA RF Input Power Pin 15 dBm Storage Temperature Range Tstg --65 to +150 °C Junction Temperature (2) TJ 150 °C 2. For reliable operation, the junction temperature should not exceed 150°C. 1. VCC = 6.2 Vdc, TA = 25°C, 50 ohm system. Table 3. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 109°C, 6.2 Vdc, 180 mA, no RF applied Symbol Value (3) Unit RθJC 31.6 °C/W NOT RECOMMENDED FOR NEW DESIGN Document Number: MMG3003NT1 Rev. 8, 2/2012 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2004--2008, 2012. All rights reserved. RF Device Data Freescale Semiconductor, Inc. MMG3003NT1 1 Characteristic NOT RECOMMENDED FOR NEW DESIGN Symbol Min Typ Max Unit Small--Signal Gain (S21) Gp 19.3 20 — dB Input Return Loss (S11) IRL — --15 — dB Output Return Loss (S22) ORL — --9.3 — dB Power Output @ 1dB Compression P1dB — 24 — dBm Third Order Output Intercept Point OIP3 — 40.5 — dBm Noise Figure NF — 4 — dB Supply Current (1) ICC 160 180 205 mA Supply Voltage (1) VCC — 6.2 — V 1. For reliable operation, the junction temperature should not exceed 150°C. NOT RECOMMENDED FOR NEW DESIGN Table 4. Electrical Characteristics (VCC = 6.2 Vdc, 900 MHz, TA = 25°C, 50 ohm system, in Freescale Application Circuit) MMG3003NT1 2 RF Device Data Freescale Semiconductor, Inc. Table 5. Functional Pin Description 2 Pin Function 1 RFin 2 Ground 3 RFout/DC Supply 1 2 3 Figure 1. Functional Diagram Table 6. ESD Protection Characteristics Test Conditions/Test Methodology Class Human Body Model (per JESD 22--A114) 1B Machine Model (per EIA/JESD 22--A115) A Charge Device Model (per JESD 22--C101) IV Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22--A113, IPC/JEDEC J--STD--020 Rating Package Peak Temperature Unit 1 260 °C NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Pin Number MMG3003NT1 RF Device Data Freescale Semiconductor, Inc. 3 50 OHM TYPICAL CHARACTERISTICS 0 TC = 85°C --40°C 20 --10 15 --20 S11 VCC = 6.2 Vdc VCC = 6.2 Vdc 10 --30 1 0 2 3 4 3 4 f, FREQUENCY (GHz) Figure 3. Input/Output Return Loss versus Frequency P1dB, 1 dB COMPRESSION POINT (dBm) 25 21 900 MHz, C5 = 2.7 pF 19 1960 MHz, C5, C6 = 1.3 pF 17 2140 MHz, C5, C6 = 1.3 pF 15 2600 MHz, C5 = 1.2 pF 13 3500 MHz, C5 = 0.5 pF 11 VCC = 6.2 Vdc 9 10 5 15 20 24 23 22 21 20 19 18 VCC = 6.2 Vdc 17 0.5 25 1 1.5 2 2.5 3 Pout, OUTPUT POWER (dBm) f, FREQUENCY (GHz) Figure 4. Small--Signal Gain versus Output Power Figure 5. P1dB versus Frequency 200 150 100 50 0 4 4.5 5 5.5 6 VCC, COLLECTOR VOLTAGE (V) Figure 6. Collector Current versus Collector Voltage 6.5 OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) Gp, SMALL--SIGNAL GAIN (dB) 2 Figure 2. Small--Signal Gain (S21) versus Frequency 23 ICC, COLLECTOR CURRENT (mA) 1 0 f, FREQUENCY (GHz) 3.5 45 42 39 36 33 VCC = 6.2 Vdc 100 kHz Tone Spacing 30 0 1 2 3 NOT RECOMMENDED FOR NEW DESIGN S22 25°C S11, S22(dB) NOT RECOMMENDED FOR NEW DESIGN Gp, SMALL--SIGNAL GAIN (dB) 25 4 f, FREQUENCY (GHz) Figure 7. Third Order Output Intercept Point versus Frequency MMG3003NT1 4 RF Device Data Freescale Semiconductor, Inc. 42 39 36 33 f = 900 MHz 100 kHz Tone Spacing 30 5.8 6 6.2 6.4 6.6 VCC, COLLECTOR VOLTAGE (V) 42 41 40 39 --40 --20 0 20 40 60 80 100 T, TEMPERATURE (_C) Figure 9. Third Order Output Intercept Point versus Case Temperature Figure 8. Third Order Output Intercept Point versus Collector Voltage 105 --30 MTTF (YEARS) --40 --50 --60 VCC = 6.2 Vdc f = 900 MHz 100 kHz Tone Spacing --70 --80 9 12 15 18 21 24 120 125 130 135 140 145 150 Pout, OUTPUT POWER (dBm) TJ, JUNCTION TEMPERATURE (°C) Figure 10. Third Order Intermodulation Distortion versus Output Power Figure 11. MTTF versus Junction Temperature 8 6 4 2 VCC = 6.2 Vdc 0 0 104 103 0.5 1 1.5 2 2.5 3 3.5 NOTE: The MTTF is calculated with VCC = 6.2 Vdc, ICC = 180 mA ACPR, ADJACENT CHANNEL POWER RATIO (dBc) IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) VCC = 6.2 Vdc f = 900 MHz 100 kHz Tone Spacing 8 Vdc Supply with 10 Ω Dropping Resistor 4 --20 VCC = 6.2 Vdc, f = 2140 MHz, C5 = 1.3 pF Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) --30 --40 --50 --60 NOT RECOMMENDED FOR NEW DESIGN OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) OIP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 45 NF, NOISE FIGURE (dB) NOT RECOMMENDED FOR NEW DESIGN 50 OHM TYPICAL CHARACTERISTICS --70 9 11 13 15 17 f, FREQUENCY (GHz) Pout, OUTPUT POWER (dBm) Figure 12. Noise Figure versus Frequency Figure 13. Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power 19 MMG3003NT1 RF Device Data Freescale Semiconductor, Inc. 5 50 OHM APPLICATION CIRCUIT: 40--800 MHz VSUPPLY C4 L1 RF INPUT Z1 DUT Z2 C1 Z1 Z2 Z3 Z4 Z3 Z4 Z6 C2 VCC Z5 Z6 PCB 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.172″ x 0.058″ Microstrip 0.403″ x 0.058″ Microstrip Z5 RF OUTPUT C5 0.286″ x 0.058″ Microstrip 0.061″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 14. 50 Ohm Test Circuit Schematic 30 S21 20 R1 C4 C3 10 L1 0 C2 C1 S22 --10 C5 --20 0 200 MMG30XX Rev 2 VCC = 6.2 Vdc S11 --30 400 800 600 f, FREQUENCY (MHz) Figure 15. S21, S11 and S22 versus Frequency Figure 16. 50 Ohm Test Circuit Component Layout Table 8. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2, C4 0.01 μF Chip Capacitors C0603C103J5RAC Kemet C3 68 pF Chip Capacitor C0805C680J5RAC Kemet C5 (1) 2.7 pF Chip Capacitor 12105J2R7BS AVX L1 470 nH Chip Inductor BK2125HM471--T Taiyo Yuden R1 7.5 Ω Chip Resistor RK73B2ATTE7R5J KOA Speer 1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies. Table 9. Supply Voltage versus R1 Values Supply Voltage 7 8 9 10 11 12 V R1 Value 4.4 10 15.6 21 27 32 Ω NOT RECOMMENDED FOR NEW DESIGN C3 S21, S11, S22 (dB) NOT RECOMMENDED FOR NEW DESIGN R1 Note: To provide VCC = 6.2 Vdc and ICC = 180 mA at the device. MMG3003NT1 6 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 800--1100 MHz VSUPPLY C4 L1 RF INPUT Z1 DUT Z2 C1 Z1, Z6 Z2 Z3 Z3 Z4 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.172″ x 0.058″ Microstrip Z5 C5 VCC Z4 Z5 PCB RF OUTPUT Z6 C2 0.333″ x 0.058″ Microstrip 0.07″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 17. 50 Ohm Test Circuit Schematic 30 S21 20 R1 10 C4 C3 0 L1 S22 --10 C1 --20 C5 C2 S11 --30 --40 600 MMG30XX Rev 2 VCC = 6.2 Vdc 700 800 900 1000 1100 1200 f, FREQUENCY (MHz) Figure 18. S21, S11 and S22 versus Frequency Figure 19. 50 Ohm Test Circuit Component Layout Table 10. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 47 pF Chip Capacitors C0805C470J5RAC Kemet C3 68 pF Chip Capacitor C0805C680J5RAC Kemet C4 0.01 μF Chip Capacitor C0603C103J5RAC Kemet C5 (1) 2.7 pF Chip Capacitor 06035J2R7BS AVX L1 22 nH Chip Inductor HK160822NJ--T Taiyo Yuden R1 7.5 Ω Chip Resistor RK73B2ATTE7R5J KOA Speer 1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies. NOT RECOMMENDED FOR NEW DESIGN C3 S21, S11, S22 (dB) NOT RECOMMENDED FOR NEW DESIGN R1 MMG3003NT1 RF Device Data Freescale Semiconductor, Inc. 7 50 OHM APPLICATION CIRCUIT: 1800--2400 MHz VSUPPLY C4 L1 RF INPUT Z1 DUT Z2 C1 Z3 Z4 C6 C5 VCC Z1, Z7 Z2 Z3 Z4 Z6 Z5 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.172″ x 0.058″ Microstrip 0.047″ x 0.058″ Microstrip Z5 Z6 PCB RF OUTPUT Z7 C2 0.062″ x 0.058″ Microstrip 0.466″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 20. 50 Ohm Test Circuit Schematic 30 20 S21 R1 C4 C3 10 0 L1 S11 --10 --20 C1 C5 C6 C2 S22 --30 MMG30XX Rev 2 VCC = 6.2 Vdc --40 1600 1800 2000 2200 2400 2600 f, FREQUENCY (MHz) Figure 21. S21, S11 and S22 versus Frequency Figure 22. 50 Ohm Test Circuit Component Layout Table 11. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 47 pF Chip Capacitors C0805C470J5RAC Kemet C3 68 pF Chip Capacitor C0805C680J5RAC Kemet C4 0.01 μF Chip Capacitor C0603C103J5RAC Kemet C5 (1) 1.2 pF Chip Capacitor 06035J1R2BS AVX (1) C6 0.1 pF Chip Capacitor 06035J0R1BS AVX L1 22 nH Chip Inductor HK160822NJ--T Taiyo Yuden R1 7.5 Ω Chip Resistor RK73B2ATTE7R5J KOA Speer 1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies. NOT RECOMMENDED FOR NEW DESIGN C3 S21, S11, S22 (dB) NOT RECOMMENDED FOR NEW DESIGN R1 MMG3003NT1 8 RF Device Data Freescale Semiconductor, Inc. 50 OHM APPLICATION CIRCUIT: 2500--2700 MHz VSUPPLY C4 L1 RF INPUT Z1 Z2 DUT C1 Z1, Z6 Z2 Z3 Z3 VCC 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.086″ x 0.058″ Microstrip Z4 Z5 C5 RF OUTPUT Z6 C2 Z4 Z5 PCB 0.085″ x 0.058″ Microstrip 0.404″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 23. 50 Ohm Test Circuit Schematic 30 S21 20 R1 10 C4 C3 0 L1 S22 --10 C1 C2 C5 --20 S11 --30 --40 2200 MMG30XX Rev 2 VCC = 6.2 Vdc 2300 2400 2500 2600 2700 2800 f, FREQUENCY (MHz) Figure 24. S21, S11 and S22 versus Frequency Figure 25. 50 Ohm Test Circuit Component Layout Table 12. 50 Ohm Test Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 2.2 pF Chip Capacitors 06035J2R2BS AVX C3 68 pF Chip Capacitor C0805C680J5RAC Kemet C4 0.01 μF Chip Capacitor C0603C103J5RAC Kemet C5 (1) 1.2 pF Chip Capacitor 06035J1R2BS AVX L1 39 nH Chip Inductor HK160839NJ--T Taiyo Yuden R1 7.5 Ω Chip Resistor RK73B2ATTE7R5J KOA Speer 1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies. NOT RECOMMENDED FOR NEW DESIGN C3 S21, S11, S22 (dB) NOT RECOMMENDED FOR NEW DESIGN R1 MMG3003NT1 RF Device Data Freescale Semiconductor, Inc. 9 50 OHM APPLICATION CIRCUIT: 3400--3600 MHz VSUPPLY C4 L1 RF INPUT Z1 DUT Z2 C1 Z1, Z6 Z2 Z3 Z3 VCC 0.347″ x 0.058″ Microstrip 0.575″ x 0.058″ Microstrip 0.086″ x 0.058″ Microstrip Z4 RF OUTPUT Z6 Z5 C5 C2 Z4 Z5 PCB 0.085″ x 0.058″ Microstrip 0.404″ x 0.058″ Microstrip Getek Grade ML200C, 0.031″, εr = 4.1 Figure 26. 50 OhmTest Circuit Schematic 20 15 S21 R1 10 C4 C3 5 L1 0 C2 C1 --5 C5 S22 --10 S11 --15 --20 3200 MMG30XX Rev 2 VCC = 6.2 Vdc 3300 3400 3500 3600 3700 3800 f, FREQUENCY (MHz) Figure 27. S21, S11 and S22 versus Frequency Figure 28. 50 Ohm Test Circuit Component Layout Table 13. 50 OhmTest Circuit Component Designations and Values Part Description Part Number Manufacturer C1, C2 2.2 pF Chip Capacitors 06035J2R2BS AVX C3 68 pF Chip Capacitor C0805C680J5RAC Kemet C4 0.01 μF Chip Capacitor C0603C103J5RAC Kemet C5 (1) 0.5 pF Chip Capacitor 06035J0R5BS AVX L1 39 nH Chip Inductor HK160839NJ--T Taiyo Yuden R1 7.5 Ω Chip Resistor RK73B2ATTE7R5J KOA Speer 1. Tuning capacitor: Capacitor value and location on the transmission line are varied for different frequencies. NOT RECOMMENDED FOR NEW DESIGN C3 S21, S11, S22 (dB) NOT RECOMMENDED FOR NEW DESIGN R1 MMG3003NT1 10 RF Device Data Freescale Semiconductor, Inc. 50 OHM TYPICAL CHARACTERISTICS S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 0100 0.141 178.297 12.985 173.850 0 0.057 0.785 0 0.087 --167.704 0150 0.153 175.556 12.654 168.9 0.057 --0.913 0.136 --137.479 0200 0.155 160.177 13.067 164.046 0.059 --2.423 0.125 --131.397 0250 0.152 159.068 12.851 160.334 0.058 --2.897 0.159 --130.233 0300 0.147 156.309 12.685 156.518 0.058 --3.227 0.187 --128.649 0350 0.139 153.853 12.519 152.664 0.058 --3.971 0.212 --128.651 0400 0.135 150.838 12.327 149.087 0.057 --4.471 0.239 --129.263 0450 0.129 148.378 12.124 145.521 0.057 --4.799 0.263 --130.237 0500 0.123 145.160 11.915 142.009 0.057 --5.285 0.285 --131.637 0550 0.117 142.332 11.694 138.634 0.057 --5.623 0.306 --133.294 0600 0.112 139.364 11.470 135.366 0.057 --6.012 0.326 --135.284 0650 0.106 136.769 11.238 132.093 0.057 --6.295 0.345 --137.146 0700 0.101 133.592 11.004 128.948 0.057 --6.705 0.362 --139.07 0750 0.096 131.187 10.770 125.882 0.057 --7.044 0.378 --141.171 0800 0.090 128.979 10.532 122.88 0.056 --7.277 0.394 --143.273 0850 0.086 126.711 10.298 119.942 0.056 --7.495 0.408 --145.372 0900 0.081 124.541 10.066 117.117 0.056 --7.847 0.422 --147.618 0950 0.076 122.189 9.841 114.276 0.056 --8.05 0.435 --149.849 1000 0.073 121.191 9.611 111.625 0.056 --8.311 0.447 --151.947 1050 0.069 119.451 9.393 108.992 0.056 --8.582 0.458 --154.142 1100 0.065 118.827 9.170 106.412 0.056 --8.89 0.470 --156.289 1150 0.062 118.851 8.957 103.879 0.056 --9.079 0.480 --158.481 1200 0.059 118.882 8.742 101.417 0.056 --9.405 0.490 --160.544 1250 0.056 119.703 8.541 99.039 0.056 --9.615 0.498 --162.608 1300 0.054 120.919 8.340 96.664 0.056 --9.805 0.507 --164.561 1350 0.051 123.223 8.143 94.364 0.056 --10.198 0.515 --166.501 1400 0.048 125.019 7.957 92.107 0.056 --10.536 0.522 --168.351 1450 0.046 128.063 7.774 89.892 0.056 --10.724 0.530 --170.229 1500 0.033 135.869 7.640 87.599 0.057 --11.197 0.529 --172.918 1550 0.030 139.127 7.475 85.482 0.057 --11.434 0.536 --174.487 1600 0.027 142.585 7.322 83.442 0.057 --11.649 0.541 --175.93 1650 0.024 146.640 7.170 81.444 0.057 --11.993 0.546 --177.394 1700 0.023 152.580 7.040 79.397 0.058 --12.335 0.552 --179.018 1750 0.021 158.266 6.890 77.439 0.058 --12.616 0.555 179.899 1800 0.021 166.196 6.756 75.477 0.058 --12.879 0.560 178.582 1850 0.022 171.633 6.621 73.576 0.058 --13.16 0.563 177.318 1900 0.023 177.431 6.495 71.695 0.058 --13.445 0.566 176.139 1950 0.025 --176.142 6.371 69.952 0.059 --13.806 0.570 175.08 2000 0.027 --173.137 6.251 67.988 0.059 --14.176 0.573 173.812 2050 0.029 --170.367 6.135 66.175 0.059 --14.413 0.577 172.704 2100 0.031 --168.467 6.025 64.385 0.060 --14.882 0.580 171.566 2150 0.033 --168.388 5.921 62.595 0.060 --15.338 0.583 170.426 2200 0.036 --169.515 5.815 60.823 0.060 --15.659 0.586 169.283 2250 0.039 --170.197 5.716 59.079 0.061 --16.136 0.589 168.164 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Table 14. Common Emitter S--Parameters (VCC = 6.2 Vdc, TA = 25°C, 50 Ohm System) (continued) MMG3003NT1 RF Device Data Freescale Semiconductor, Inc. 11 50 OHM TYPICAL CHARACTERISTICS S11 S21 S12 S22 f MHz |S11| ∠φ |S21| ∠φ |S12| ∠φ |S22| ∠φ 2300 0.042 --171.944 5.618 57.331 0.061 --16.513 0.591 167.003 2350 0.045 --173.747 5.525 55.573 0.061 --16.98 0.593 165.803 2400 0.048 --175.268 5.431 53.848 0.062 --17.435 0.595 164.669 2450 0.052 --177.409 5.345 52.136 0.062 --17.955 0.597 163.447 2500 0.056 --178.703 5.258 50.405 0.062 --18.404 0.598 162.182 2550 0.060 179.650 5.173 48.736 0.063 --19.004 0.600 160.854 2600 0.063 177.705 5.096 47.012 0.063 --19.505 0.602 159.516 2650 0.067 175.894 5.015 45.266 0.063 --20.1 0.603 158.1 2700 0.071 174.932 4.938 43.452 0.064 --20.75 0.605 156.649 2750 0.074 172.453 4.861 41.831 0.064 --21.297 0.607 155.174 2800 0.079 170.595 4.788 40.113 0.065 --21.999 0.609 153.675 2850 0.083 168.962 4.715 38.402 0.065 --22.577 0.610 152.104 2900 0.087 167.373 4.643 36.711 0.065 --23.239 0.612 150.539 2950 0.091 165.543 4.573 35.036 0.066 --23.942 0.614 148.941 3000 0.095 164.513 4.506 33.356 0.066 --24.652 0.616 147.251 3050 0.099 163.309 4.438 31.684 0.066 --25.269 0.618 145.747 3100 0.103 162.077 4.373 29.98 0.067 --26.085 0.620 144.105 3150 0.107 161.249 4.308 28.307 0.067 --26.717 0.622 142.483 3200 0.110 160.222 4.244 26.653 0.067 --27.483 0.624 140.894 3250 0.114 159.057 4.182 25.007 0.068 --28.223 0.626 139.31 3300 0.117 158.018 4.121 23.381 0.068 --29.013 0.629 137.737 3350 0.119 156.94 4.061 21.791 0.068 --29.779 0.631 136.267 3400 0.122 155.757 4.004 20.196 0.069 --30.535 0.633 134.76 3450 0.126 154.754 3.949 18.618 0.069 --31.29 0.635 6 3500 0.12826 153.898 3.895 17.049 0.06938 --31.957 0.6367 131.951 3550 0.13168 152.875 3.84045 15.491 0.06971 --32.814 0.6392 130.655 3600 0.13497 152.157 3.78882 13.97 0.07016 --33.474 0.64031 129.412 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Table 14. Common Emitter S--Parameters (VCC = 6.2 Vdc, TA = 25°C, 50 Ohm System) (continued) MMG3003NT1 12 RF Device Data Freescale Semiconductor, Inc. 1.7 0.305 diameter 2.49 3.48 5.33 1.27 1.27 0.58 0.86 0.64 3.86 Recommended Solder Stencil NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE LANDING PATTERN. 3. IF VIAS CANNOT BE PLACED ON THE LANDING PATTERN, THEN AS MANY VIAS AS POSSIBLE SHOULD BE PLACED AS CLOSE TO THE LANDING PATTERN AS POSSIBLE FOR OPTIMAL THERMAL AND RF PERFORMANCE. 4. RECOMMENDED VIA PATTERN SHOWN HAS 0.381 x 0.762 MM PITCH. Figure 29. Recommended Mounting Configuration 2.54 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN 7.62 MMG3003NT1 RF Device Data Freescale Semiconductor, Inc. 13 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN PACKAGE DIMENSIONS MMG3003NT1 14 RF Device Data Freescale Semiconductor, Inc. MMG3003NT1 RF Device Data Freescale Semiconductor, Inc. 15 NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN MMG3003NT1 16 RF Device Data Freescale Semiconductor, Inc. NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN PRODUCT DOCUMENTATION AND SOFTWARE Software • .s2p File NOT RECOMMENDED FOR NEW DESIGN NOT RECOMMENDED FOR NEW DESIGN Refer to the following documents and software to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers • AN3100: General Purpose Amplifier and MMIC Biasing For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 5 Mar. 2007 • Corrected and updated Part Numbers in Tables 8, 10, 11, 12, and 13, Component Designations and Values, to RoHS compliant part numbers, p. 6--10 6 July 2007 • Replaced Case Outline 1514--01 with 1514--02, Issue D, p. 1, 14--16. Case updated to add missing dimension for Pin 1 and Pin 3. 7 Mar. 2008 • Removed Footnote 2, Continuous voltage and current applied to device, from Table 2, Maximum Ratings, p. 1 • Corrected Fig. 13, Single--Carrier W--CDMA Adjacent Channel Power Ratio versus Output Power y--axis (ACPR) unit of measure to dBc, p. 5 • Corrected S--Parameter table frequency column label to read “MHz” versus “GHz” and corrected frequency values from GHz to MHz, p. 11, 12 8 Feb. 2012 • Corrected temperature at which ThetaJC is measured from 25°C to 109°C and added “no RF applied” to Thermal Characteristics table to indicate that thermal characterization is performed under DC test with no RF signal applied, p. 1 • Table 6, ESD Protection Characterization, removed the word “Minimum” after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive devices, p. 3 • Removed ICC bias callout from applicable graphs and Table 14, Common Emitter S--Parameters heading as bias is not a controlled value, p. 4--12 • Added .s2p File availability to Product Software, p. 17 MMG3003NT1 RF Device Data Freescale Semiconductor, Inc. 17 Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1--800--521--6274 or +1--480--768--2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. 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