Freescale Semiconductor Technical Data Document Number: MRF21030 Rev. 12, 5/2006 RF Power Field Effect Transistors MRF21030LR3 MRF21030LSR3 Designed for PCN and PCS base station applications with frequencies from 2000 to 2200 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications. • Wideband CDMA Performance: --45 dB ACPR @ 4.096 MHz, 28 Volts Output Power — 3.5 Watts Power Gain — 14 dB Efficiency — 15% • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2110 MHz, 30 Watts CW Output Power Features • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Excellent Thermal Stability • Characterized with Series Equivalent Large--Signal Impedance Parameters • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel. 2200 MHz, 30 W, 28 V LATERAL N--CHANNEL RF POWER MOSFETs CASE 465E--04, STYLE 1 NI--400 MRF21030LR3 CASE 465F--04, STYLE 1 NI--400S MRF21030LSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +65 Vdc Gate--Source Voltage VGS --0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 83.3 0.48 W W/°C Storage Temperature Range Tstg -- 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value Unit RθJC 2.1 °C/W ARCHIVE INFORMATION ARCHIVE INFORMATION N--Channel Enhancement--Mode Lateral MOSFETs Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model © Freescale Semiconductor, Inc., 2006, 2008. All rights reserved. RF Device Data Freescale Semiconductor Class 2 (Minimum) M3 (Minimum) MRF21030LR3 MRF21030LSR3 1 Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit V(BR)DSS 65 — — Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 μAdc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 250 mA) VGS(Q) 2 3.3 4.5 Vdc Drain--Source On--Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.29 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) gfs — 2 — S Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Ciss — 98.5 — pF Output Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Coss — 37 — pF Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) Crss — 1.3 — pF Two--Tone Common--Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) Gps — 13 — dB Two--Tone Drain Efficiency (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) η — 33 — % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) IMD — --30 — dBc Input Return Loss (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2140.0 MHz, f2 = 2140.1 MHz) IRL — --13 — dB Two--Tone Common--Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) Gps 12 13 — dB Two--Tone Drain Efficiency (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) η 31 33 — % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IMD — --30 --27.5 dBc Input Return Loss (VDD = 28 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 2110.0 MHz, f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz) IRL — --13 --9 dB Characteristic Off Characteristics Drain--Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 μA) Dynamic Characteristics Functional Tests (In Freescale Test Fixture, 50 ohm system) ARCHIVE INFORMATION ARCHIVE INFORMATION On Characteristics 1. Part is internally matched both on input and output. MRF21030LR3 MRF21030LSR3 2 RF Device Data Freescale Semiconductor B1 + C6 B2 + R1 C5 C4 C8 C10 Z1 Z2 Z3 Z4 Z5 Z6 C2 C3 Z7 C12 C13 Z8 Z9 RF OUTPUT Z10 C9 DUT C7 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 PCB Short Ferrite Beads 1 pF Chip Capacitor 4.7 pF Chip Capacitor 0.5 pF Chip Capacitor 3.9 pF Chip Capacitor 0.1 μF Chip Capacitors 470 μF, 63 V Electrolytic Chip Capacitors 0.3 pF Chip Capacitors 3.6 pF Chip Capacitor 22 μF Tantalum Chip Capacitor 5.1 pF Chip Capacitor 12.5 nH Inductors 12 Ω Chip Resistors (1206) 0.153″ x 0.087″ Microstrip 0.509″ x 0.156″ Microstrip 0.572″ x 0.087″ Microstrip 0.509″ x 0.232″ Microstrip 0.277″ x 0.143″ Microstrip 0.200″ x 0.305″ Microstrip 0.200″ x 0.511″ Microstrip 0.510″ x 0.328″ Microstrip 0.608″ x 0.081″ Microstrip Taconic TLX8, 30 mils, εr = 2.55 Figure 1. MRF21030LR3(SR3) Test Circuit Schematic C13 + V BIAS C6 B1 R2 B2 R1 C1 VSUPPLY C10 C8 C3 L2 WB2 L1 CUT OUT AREA C2 C12 C11 C4 Ground + C5 WB1 ARCHIVE INFORMATION C1 B1, B2 C1 C2 C3 C4 C5, C12 C6, C13 C7, C8 C9 C10 C11 L1, L2 R1, R2 + R2 L2 L1 RF INPUT C11 VSUPPLY C9 C7 ARCHIVE INFORMATION VBIAS Ground MRF21030 Rev 1 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21030LR3(SR3) Test Circuit Component Layout MRF21030LR3 MRF21030LSR3 RF Device Data Freescale Semiconductor 3 30 20 --20 VDD = 28 Vdc, Pout = 30 W (PEP), IDQ = 250 mA Two--Tone Measurement, 100 kHz Tone Spacing --25 Gps 10 0 2080 --15 η --30 IMD 2100 2140 2160 2120 f, FREQUENCY (MHz) 2180 --35 2200 --40 20 ACPR 15 η 10 5 0 --20 --45 --50 --55 1.0 IMD, INTERMODULATION DISTORTION (dBc) --40 200 mA 250 mA 400 mA 300 mA 350 mA 10 Pout, OUTPUT POWER (WATTS) PEP --60 4 5 2 1 3 Pout, OUTPUT POWER (WATTS Avg.) CDMA 6 --70 Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power --25 --35 --50 Gps Figure 3. Class AB Broadband Circuit Performance VDD = 28 Vdc, f = 2140 MHz Two--Tone Measurement, --30 100 kHz Tone Spacing --30 100 3rd Order VDD = 28 Vdc, IDQ = 250 mA, f = 2140 MHz Two--Tone Measurement, 100 kHz Tone Spacing --30 --40 7th Order --50 5th Order --60 --70 1.0 Figure 5. Intermodulation Distortion versus Output Power 100 10 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power 15 16 --22 --24 15 14.5 400 mA 350 mA 300 mA 14 250 mA 200 mA VDD = 28 Vdc, f = 2140 MHz Two--Tone Measurement, 100 kHz Tone Spacing 13 1.0 10 Pout, OUTPUT POWER (WATTS) PEP Figure 7. Power Gain versus Output Power 100 --26 Gps 14 ARCHIVE INFORMATION 40 IRL VDD = 28 Vdc, IDQ = 250 mA, f = 2140 MHz Channel Spacing (Channel Bandwidth): 4.096 MHz (5 MHz) 25 ADJACENT CHANNEL POWER RATIO (dB) --10 --20 30 --28 --30 IMD --32 13.5 --34 Pout = 30 W (PEP) IDQ = 250 mA, f = 2140 MHz Two--Tone Measurement, 100 kHz Tone Spacing 13 20 22 24 26 28 30 --36 32 34 --38 VDD, DRAIN VOLTAGE (VOLTS) Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage MRF21030LR3 MRF21030LSR3 4 RF Device Data Freescale Semiconductor IMD, INTERMODULATION DISTORTION (dBc) 50 η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) --5 IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 60 G ps , POWER GAIN (dB) G ps , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) ARCHIVE INFORMATION η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB) TYPICAL CHARACTERISTICS Zo = 25 Ω f = 2170 MHz Zload f = 2110 MHz f = 2170 MHz Zsource ARCHIVE INFORMATION ARCHIVE INFORMATION f = 2110 MHz VDD = 28 V, IDQ = 250 mA, Pout = 30 W PEP f MHz Zsource Ω 2110 15.3 -- j9.4 3.7 -- j0.78 2140 14.6 -- j9.4 3.4 -- j0.37 2170 14.3 -- j8.8 3.0 + j0.13 Zload Ω Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 9. Series Equivalent Source and Load Impedance MRF21030LR3 MRF21030LSR3 RF Device Data Freescale Semiconductor 5 ARCHIVE INFORMATION ARCHIVE INFORMATION NOTES MRF21030LR3 MRF21030LSR3 6 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS bbb Q M T B M A M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060±.005 (1.52±0.13) RADIUS OR .06±.005 (1.52±0.13) x 45° CHAMFER. B SEE NOTE 4 1 2X K 3 B 2 2X D bbb M T A M B M N (LID) ARCHIVE INFORMATION ccc M T A B M ccc M aaa M T A M B M A M F S (INSULATOR) SEATING PLANE T M (INSULATOR) B M R (LID) C E T A M aaa M T A M H B M DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .004 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A CASE 465E--04 ISSUE F NI--400 MRF21030LR3 2X D bbb M T A M B NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M--1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M 1 2 2X K ccc M T A M N E B R M (LID) (LID) ccc C M T A M B M M B M F 3 A T A (FLANGE) M aaa M T A M SEATING PLANE (INSULATOR) B M H S (INSULATOR) aaa B (FLANGE) M T A B DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .004 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.10 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF ARCHIVE INFORMATION 2X G STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE CASE 465F--04 ISSUE E NI--400S MRF21030LSR3 MRF21030LR3 MRF21030LSR3 RF Device Data Freescale Semiconductor 7 REVISION HISTORY The following table summarizes revisions to this document. Date Description 12 Dec. 2010 • MRF21030 Rev. 12 data sheet archived. Data sheet split due to change in part life cycle. See MRF21030--1 Rev. 13 for MRF21030LSR3 and MRF21030--2 Rev. 14 for MRF21030LR3. ARCHIVE INFORMATION ARCHIVE INFORMATION Revision MRF21030LR3 MRF21030LSR3 8 RF Device Data Freescale Semiconductor Home Page: www.freescale.com E--mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1--800--521--6274 or +1--480--768--2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1--8--1, Shimo--Meguro, Meguro--ku, Tokyo 153--0064 Japan 0120 191014 or +81 3 5437 9125 [email protected] Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. 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ARCHIVE INFORMATION ARCHIVE INFORMATION How to Reach Us: Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008. All rights reserved. MRF21030LR3 MRF21030LSR3 Document Number: RF Device Data MRF21030 Rev. 12, 5/2006 Freescale Semiconductor 9