Freescale Semiconductor Technical Data Document Number: MRF6P21190HR6 Rev. 3, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P21190HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L applications. • Typical 2 - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1900 mA, Pout = 44 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 26.5% IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 190 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Lower Thermal Resistance Package • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • Low Gold Plating Thickness on Leads, 40μ″ Nominal. • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel. 2110 - 2170 MHz, 44 W AVG., 28 V 2 x W - CDMA LATERAL N - CHANNEL RF POWER MOSFET CASE 375D - 05, STYLE 1 NI - 1230 Table 1. Maximum Ratings Rating Symbol Value Unit Drain- Source Voltage VDSS - 0.5, +68 Vdc Gate- Source Voltage VGS - 0.5, +12 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 700 4 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C Operating Junction Temperature TJ 200 °C Symbol Value (1,2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 190 W CW Case Temperature 72°C, 44 W CW RθJC °C/W 0.25 0.27 1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MRF6P21190HR6 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) III (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 250 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (3) (VDS = 28 Vdc, ID = 1900 mAdc) VGS(Q) 2 2.8 4 Vdc Drain- Source On - Voltage (1) (VGS = 10 Vdc, ID = 2.2 Adc) VDS(on) 0.1 0.21 0.3 Vdc Forward Transconductance (1) (VDS = 10 Vdc, ID = 2 Adc) gfs — 5.3 — S Crss — 1.5 — pF Characteristic Off Characteristics (1) On Characteristics Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1900 mA, Pout = 44 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz, 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 14.5 15.5 17.5 dB Drain Efficiency ηD 25 26.5 — % Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss IM3 — - 37 - 35 dBc ACPR — - 40 - 38 dBc IRL — - 15 -9 dB 1. Each side of device measured separately. 2. Part is internally matched both on input and output. 3. Measurements made with device in push - pull configuration. MRF6P21190HR6 2 RF Device Data Freescale Semiconductor + B1 VBIAS + C14 + R1 C6 C5 C4 + C3 C15 C19 C16 C17 C18 + + VSUPPLY C20 C21 C2 B2 Z14 Z16 Z18 Z20 Z22 R2 Z4 RF INPUT Z1 Z6 Z8 Z10 C13 Z12 C1 Z2 RF Z24 OUTPUT Z23 DUT Z5 Z3 Z7 Z9 Z11 C7 Z13 Z15 Z17 Z19 C22 B3 VBIAS + C12 Z21 + R3 C11 C10 C9 B4 C8 + C23 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 Z13, Z14 + 0.850″ x 0.067″ Microstrip 1.140″ x 0.114″ Microstrip 1.830″ x 0.067″ Microstrip 0.088″ x 0.067″ Microstrip 0.250″ x 0.067″ Microstrip 0.324″ x 0.178″ Microstrip 0.143″ x 0.655″ Microstrip 0.111″ x 0.655″ Microstrip 0.124″ x 0.712″ Microstrip Z15, Z16 Z17, Z18 Z19, Z20 Z21 Z22 Z23 Z24 PCB C24 C28 C25 C26 C27 + + VSUPPLY C29 C30 0.289″ x 0.712″ Microstrip 0.127″ x 0.200″ Microstrip 0.288″ x 0.067″ Microstrip 0.088″ x 0.067″ Microstrip 1.830″ x 0.067″ Microstrip 1.140″ x 0.114″ Microstrip 0.850″ x 0.066″ Microstrip Taconic RF - 35, 0.030″, εr = 3.5 Figure 1. MRF6P21190HR6 Test Circuit Schematic Table 5. MRF6P21190HR6 Test Circuit Component Designations and Values Part Description Part Number Manufacturer B1, B2, B3, B4 RF Beads 2743019447 Fair- Rite C1, C7 30 pF Chip Capacitors 100B300JP500X ATC C2, C8, C15, C24 6.8 pF Chip Capacitors 100B6R8CP500X ATC C3, C9, C18, C27 1k pF Chip Capacitors 100B102JP50X ATC C4, C10 1 μF, 50 V Tantalum Chip Capacitors T491C105K050AS Kemet C5, C11, C17, C26 0.1 μF Chip Capacitors CDR33BX104AKWS Kemet C6, C12 100 μF, 50 V Electrolytic Capacitors, Radial MCR50V107M8X11 Multicomp C13, C22 43 pF Chip Capacitors 100B430JP500X ATC C14, C19, C20, C23, C28, C29 22 μF, 35 V Tantalum Chip Capacitors T491X226K035AS Kemet C16, C25 0.56 μF Chip Capacitors (1825) C1825C564J5RAC Kemet C21, C30 470 μF, 63 V Electrolytic Capacitors, Radial MCR63V477M13X26 Multicomp R1, R3 1 kW, 1/4 W Chip Resistors (1206) CRCW12061001F100 Vishay R2, R4 12 W, 1/4 W Chip Resistors (1206) CRCW120612R0F100 Vishay MRF6P21190HR6 RF Device Data Freescale Semiconductor 3 C3 + C14 C17 C15 R1 C6 MRF6P21190 Rev 2 C18 C16 - C5 C4 + C2 R2 C21 B1 C19 B2 C20 C13 CUT OUT AREA C1 C7 C22 C28 C29 R4 B3 B4 + + C12 R3 C11 C10 C9 C8 C23 C24 - C25 C26 C27 - C30 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF6P21190HR6 Test Circuit Component Layout MRF6P21190HR6 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 20 30 20 Gps 14 VDD = 28 Vdc, Pout = 44 W (Avg.), IDQ = 1900 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing 10 12 −10 IRL 10 −20 8 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3 −30 6 −40 ACPR 4 2080 2100 2120 2140 2160 2180 2200 −10 IM3 (dBc), ACPR (dBc) Gps, POWER GAIN (dB) 16 −50 2220 −15 −20 −25 −30 IRL, INPUT RETURN LOSS (dB) ηD 18 ηD, DRAIN EFFICIENCY (%) 40 f, FREQUENCY (MHz) Figure 3. 2 - Carrier W - CDMA Broadband Performance @ Pout = 44 Watts Avg. ηD 40 16 Gps 30 14 VDD = 28 Vdc, Pout = 87 W (Avg.), IDQ = 1900 mA 2−Carrier W−CDMA, 10 MHz Carrier Spacing 12 10 20 0 IRL −10 8 IM3 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) −20 6 −30 ACPR 4 2080 2100 2120 2140 2160 2180 2200 −40 2220 −10 −15 −20 −25 −30 IRL, INPUT RETURN LOSS (dB) 18 ηD, DRAIN EFFICIENCY (%) 50 IM3 (dBc), ACPR (dBc) Gps, POWER GAIN (dB) 20 f, FREQUENCY (MHz) Figure 4. 2 - Carrier W - CDMA Broadband Performance @ Pout = 87 Watts Avg. 17 −30 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2500 mA Gps, POWER GAIN (dB) 16.5 2200 mA 16 1900 mA 15.5 1600 mA 15 1300 mA 14.5 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurements, 10 MHz Tone Spacing 14 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two−Tone Measurements, 10 MHz Tone Spacing −35 2200 mA IDQ = 2500 mA 1900 mA −40 1600 mA −45 −50 1300 mA −55 10 1 100 Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two - Tone Power Gain versus Output Power 400 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Third Order Intermodulation Distortion versus Output Power MRF6P21190HR6 RF Device Data Freescale Semiconductor 5 −15 58 VDD = 28 Vdc, Pout = 190 W (PEP), IDQ = 1900 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz −30 3rd Order −35 5th Order −40 −45 7th Order −50 55 P1dB = 53.7 dBm (233 W) 54 Actual 53 52 51 50 VDD = 28 Vdc, IDQ = 1900 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2140 MHz 49 47 10 1 32 100 34 33 36 35 37 38 39 40 41 42 Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulse CW Output Power versus Input Power 18 −30 ηD IM3 −35 ACPR −40 Gps 15 −45 12 40 9 30 6 20 −50 5 −55 3 −60 100 0 0 10 50 15 10 1 60 Gps IM3 (dBc), ACPR (dBc) VDD = 28 Vdc, IDQ = 1900 mA f1 = 2135 MHz, f2 = 2145 MHz 2−Carrier W−CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) 44 43 TWO−TONE SPACING (MHz) 30 20 Ideal 56 48 −55 0.1 25 P3dB = 54.45 dBm (279 W) VDD = 28 Vdc IDQ = 1900 mA f = 2140 MHz ηD 10 3 100 Pout, OUTPUT POWER (WATTS) AVG. Pout, OUTPUT POWER (WATTS) CW Figure 9. 2 - Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 10. Power Gain and Drain Efficiency versus CW Output Power 10 ηD, DRAIN EFFICIENCY (%) −25 Pout, OUTPUT POWER (dBm) −20 57 Gps, POWER GAIN (dB) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS 0 300 18 Gps, POWER GAIN (dB) 16 VDD = 28 V 14 12 24 V 10 20 V IDQ = 1900 mA f = 2140 MHz 8 6 3 10 16 V 12 V 100 500 Pout, OUTPUT POWER (WATTS) CW Figure 11. Power Gain versus Output Power MRF6P21190HR6 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS MTTF FACTOR (HOURS x AMPS2) 1010 109 108 107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application. Figure 12. MTTF Factor versus Junction Temperature W - CDMA TEST SIGNAL 100 +20 3.84 MHz Channel BW +30 0 −10 1 (dB) PROBABILITY (%) 10 0.1 −20 −30 −40 0.01 −50 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF 0.001 −60 −70 0.0001 0 2 4 6 8 10 PEAK−TO−AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW −IM3 in 3.84 MHz BW −80 −25 −20 −15 −10 −5 0 5 10 +IM3 in 3.84 MHz BW 15 20 25 f, FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum MRF6P21190HR6 RF Device Data Freescale Semiconductor 7 Zo = 25 Ω f = 2200 MHz f = 2200 MHz Zload Zsource f = 2000 MHz f = 2000 MHz VDD = 28 Vdc, IDQ = 1900 mA, Pout = 44 W Avg. f MHz Zsource Ω Zload Ω 2000 5.63 - j12.88 3.43 - j10.06 2110 4.36 - j10.02 3.22 - j7.13 2140 4.56 - j8.49 3.39 - j6.07 2170 5.11 - j7.41 3.76 - j5.45 2200 5.42 - j6.67 3.69 - j5.16 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test − − Z source Output Matching Network + Z load Figure 15. Series Equivalent Source and Load Impedance MRF6P21190HR6 8 RF Device Data Freescale Semiconductor NOTES MRF6P21190HR6 RF Device Data Freescale Semiconductor 9 NOTES MRF6P21190HR6 10 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X bbb G 4 1 2 3 4 T A B M M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. B (FLANGE) 4X K M B L 4X Q A A D aaa M T A M B M ccc ccc M T A M B M T A M B M R M (LID) N (LID) F H C E PIN 5 M (INSULATOR) bbb M T A M B S T SEATING PLANE (INSULATOR) bbb M T A M M B M DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.082 0.090 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.08 2.29 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF DRAIN DRAIN GATE GATE SOURCE CASE 375D - 05 ISSUE E NI - 1230 MRF6P21190HR6 RF Device Data Freescale Semiconductor 11 How to Reach Us: Home Page: www.freescale.com E - mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 [email protected] Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7 81829 Muenchen, Germany +44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) [email protected] Japan: Freescale Semiconductor Japan Ltd. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. MRF6P21190HR6 Document Number: MRF6P21190HR6 Rev. 3, 5/2006 12 RF Device Data Freescale Semiconductor