Document Number: MRF6P21190HR6 Rev. 5,12/2010 RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET MRF6P21190HR6 LIFETIME BUY Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN--PCS/cellular radio and WLL applications. • Typical 2--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1900 mA, Pout = 44 Watts Avg., f = 2112.5 MHz, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain — 15.5 dB Drain Efficiency — 26.5% IM3 @ 10 MHz Offset — --37 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset — --40 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 190 Watts CW Output Power Features • Characterized with Series Equivalent Large--Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 32 VDD Operation • Integrated ESD Protection • Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications • RoHS Compliant • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. 2110--2170 MHz, 44 W AVG., 28 V 2 x W--CDMA LATERAL N--CHANNEL RF POWER MOSFET CASE 375D--05, STYLE 1 NI--1230 Table 1. Maximum Ratings Rating Symbol Value Unit Drain--Source Voltage VDSS --0.5, +68 Vdc Gate--Source Voltage VGS --0.5, +12 Vdc Storage Temperature Range Tstg -- 65 to +150 °C TC 150 °C TJ 225 °C Symbol Value (2,3) Case Operating Temperature Operating Junction Temperature (1,2) Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 190 W CW Case Temperature 72°C, 44 W CW RθJC Unit °C/W 0.25 0.27 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. © Freescale Semiconductor, Inc., 2004--2006, 2008, 2010. All rights reserved. RF Device Data Freescale Semiconductor LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Freescale Semiconductor Technical Data MRF6P21190HR6 1 Table 3. ESD Protection Characteristics Class Human Body Model (per JESD22--A114) 1C (Minimum) Machine Model (per EIA/JESD22--A115) A (Minimum) Charge Device Model (per JESD22--C101) III (Minimum) Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 250 μAdc) VGS(th) 1 2 3 Vdc Gate Quiescent Voltage (3) (VDD = 28 Vdc, ID = 1900 mAdc, Measured in Functional Test) VGS(Q) 2 2.8 4 Vdc Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 2.2 Adc) VDS(on) 0.1 0.21 0.3 Vdc Crss — 1.5 — pF Characteristic Off Characteristics (1) LIFETIME BUY On Characteristics Dynamic Characteristics (1,2) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1900 mA, Pout = 44 W Avg., f1 = 2112.5 MHz, f2 = 2122.5 MHz, 2--carrier W--CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Channel Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain Gps 14.5 15.5 17.5 dB Drain Efficiency ηD 25 26.5 — % Intermodulation Distortion IM3 — --37 --35 dBc ACPR — --40 --38 dBc IRL — --15 --9 dB Adjacent Channel Power Ratio Input Return Loss 1. Each side of device measured separately. 2. Part is internally matched both on input and output. 3. Measurements made with device in push--pull configuration. LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Test Methodology MRF6P21190HR6 2 RF Device Data Freescale Semiconductor VBIAS + C14 + R1 C6 C5 C4 C3 Z6 Z4 Z1 Z8 C15 C19 C16 C17 Z14 Z10 Z16 Z18 Z20 + VSUPPLY C20 C21 Z22 C13 Z12 C1 Z2 C18 + C2 B2 R2 RF INPUT + RF Z24 OUTPUT Z23 DUT Z5 Z3 Z7 Z9 Z11 C7 Z13 Z15 Z17 Z19 Z21 C22 B3 VBIAS + LIFETIME BUY C12 + R3 C11 C10 C9 B4 C8 + C23 R4 Z1 Z2 Z3 Z4 Z5, Z6 Z7, Z8 Z9, Z10 Z11, Z12 Z13, Z14 + 0.850″ x 0.067″ Microstrip 1.140″ x 0.114″ Microstrip 1.830″ x 0.067″ Microstrip 0.088″ x 0.067″ Microstrip 0.250″ x 0.067″ Microstrip 0.324″ x 0.178″ Microstrip 0.143″ x 0.655″ Microstrip 0.111″ x 0.655″ Microstrip 0.124″ x 0.712″ Microstrip Z15, Z16 Z17, Z18 Z19, Z20 Z21 Z22 Z23 Z24 PCB C24 C28 C25 C26 C27 + + VSUPPLY C29 C30 0.289″ x 0.712″ Microstrip 0.127″ x 0.200″ Microstrip 0.288″ x 0.067″ Microstrip 0.088″ x 0.067″ Microstrip 1.830″ x 0.067″ Microstrip 1.140″ x 0.114″ Microstrip 0.850″ x 0.066″ Microstrip Taconic RF--35, 0.030″, εr = 3.5 Figure 1. MRF6P21190HR6 Test Circuit Schematic Table 5. MRF6P21190HR6 Test Circuit Component Designations and Values Part Description Part Number LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 + B1 Manufacturer B1, B2, B3, B4 RF Beads 2743019447 Fair--Rite C1, C7 30 pF Chip Capacitors ATC100B300JT500XT ATC C2, C8, C15, C24 6.8 pF Chip Capacitors ATC100B6R8CT500XT ATC C3, C9, C18, C27 1k pF Chip Capacitors ATC100B102JT50XT ATC C4, C10 1 μF, 50 V Tantalum Chip Capacitors T491C105K050AT Kemet C5, C11, C17, C26 0.1 μF Chip Capacitors CDR33BX104AKWT Kemet C6, C12 100 μF, 50 V Electrolytic Capacitors, Radial EEEFK1H101P Panasonic C13, C22 43 pF Chip Capacitors ATC100B430JT500XT ATC C14, C19, C20, C23, C28, C29 22 μF, 35 V Tantalum Chip Capacitors T491X226K035AT Kemet C16, C25 0.56 μF Chip Capacitors C1825C564J5RAC Kemet C21, C30 470 μF, 63 V Electrolytic Capacitors, Radial 477KXM063M Illinois Capacitor R1, R3 1 kΩ, 1/4 W Chip Resistors CRCW12061001FKEA Vishay R2, R4 12 Ω, 1/4 W Chip Resistors CRCW120612R0FKEA Vishay MRF6P21190HR6 RF Device Data Freescale Semiconductor 3 -+ C14 C15 R1 C6 MRF6P21190 Rev 2 C16 C17 C18 C5 C4 + C2 R2 B1 C19 B2 C20 C13 CUT OUT AREA C1 C7 LIFETIME BUY C21 -- C22 C28 C29 R4 B3 B4 + + C12 R3 C11 C10 C9 C8 C23 C24 -- C25 C26 C27 -- C30 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF6P21190HR6 Test Circuit Component Layout LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 C3 MRF6P21190HR6 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS Gps, POWER GAIN (dB) 16 20 Gps 14 VDD = 28 Vdc, Pout = 44 W (Avg.), IDQ = 1900 mA 2--Carrier W--CDMA, 10 MHz Carrier Spacing 12 10 --10 IRL 10 8 IM3 6 4 2080 --20 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) --30 --40 ACPR 2100 2120 2140 2160 2180 --50 2220 2200 --10 --15 --20 --25 --30 Figure 3. 2--Carrier W--CDMA Broadband Performance @ Pout = 44 Watts Avg. 20 ηD 40 16 Gps 30 14 VDD = 28 Vdc, Pout = 87 W (Avg.), IDQ = 1900 mA 2--Carrier W--CDMA, 10 MHz Carrier Spacing 12 10 0 IRL 8 IM3 --10 3.84 MHz Channel Bandwidth, PAR = 8.5 dB @ 0.01% Probability (CCDF) --20 6 --30 ACPR 4 2080 2100 2120 2140 2160 2180 2200 --40 2220 --10 --15 --20 --25 --30 f, FREQUENCY (MHz) Figure 4. 2--Carrier W--CDMA Broadband Performance @ Pout = 87 Watts Avg. 17 --30 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 2500 mA 16.5 Gps, POWER GAIN (dB) 20 IRL, INPUT RETURN LOSS (dB) 18 ηD, DRAIN EFFICIENCY (%) 50 IM3 (dBc), ACPR (dBc) Gps, POWER GAIN (dB) LIFETIME BUY f, FREQUENCY (MHz) 2200 mA 16 1900 mA 15.5 1600 mA 15 1300 mA 14.5 14 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurements, 10 MHz Tone Spacing 10 1 100 300 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two--Tone Measurements, 10 MHz Tone Spacing --35 2200 mA IDQ = 2500 mA 1900 mA --40 1600 mA --45 --50 --55 1300 mA 1 10 100 300 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Two--Tone Power Gain versus Output Power Figure 6. Third Order Intermodulation Distortion versus Output Power LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 30 IRL, INPUT RETURN LOSS (dB) ηD 18 ηD, DRAIN EFFICIENCY (%) 40 IM3 (dBc), ACPR (dBc) 20 MRF6P21190HR6 RF Device Data Freescale Semiconductor 5 TYPICAL CHARACTERISTICS --30 3rd Order --35 5th Order --40 --45 7th Order --50 --55 0.1 30 25 20 55 P1dB = 53.7 dBm (233 W) 54 Actual 53 52 51 50 VDD = 28 Vdc, IDQ = 1900 mA Pulsed CW, 8 μsec(on), 1 msec(off) f = 2140 MHz 49 48 1 47 32 100 10 Ideal 33 34 35 36 37 38 39 40 41 42 43 TWO--TONE SPACING (MHz) Pin, INPUT POWER (dBm) Figure 7. Intermodulation Distortion Products versus Tone Spacing Figure 8. Pulsed CW Output Power versus Input Power ηD VDD = 28 Vdc, IDQ = 1900 mA f1 = 2135 MHz, f2 = 2145 MHz 2--Carrier W--CDMA, 10 MHz Carrier Spacing, 3.84 MHz Channel Bandwidth PAR = 8.5 dB @ 0.01% Probability (CCDF) IM3 --30 18 --35 15 50 12 40 9 30 6 20 ACPR --40 Gps 15 --45 10 --50 5 --55 3 --60 100 0 0 1 10 60 Gps VDD = 28 Vdc IDQ = 1900 mA f = 2140 MHz ηD 10 3 100 Pout, OUTPUT POWER (WATTS) AVG. Pout, OUTPUT POWER (WATTS) CW Figure 9. 2--Carrier W--CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 10. Power Gain and Drain Efficiency versus CW Output Power 18 Gps, POWER GAIN (dB) 16 VDD = 28 V 14 12 24 V 10 20 V IDQ = 1900 mA f = 2140 MHz 8 6 3 10 44 100 Pout, OUTPUT POWER (WATTS) CW 500 10 0 300 ηD, DRAIN EFFICIENCY (%) --25 P3dB = 54.45 dBm (279 W) 56 Pout, OUTPUT POWER (dBm) --20 57 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 58 VDD = 28 Vdc, Pout = 190 W (PEP), IDQ = 1900 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz IM3 (dBc), ACPR (dBc) Gps, POWER GAIN (dB) ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB) LIFETIME BUY IMD, INTERMODULATION DISTORTION (dBc) --15 Figure 11. Power Gain versus Output Power MRF6P21190HR6 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 107 106 105 90 110 130 150 170 190 210 230 250 This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 44 W Avg., and ηD = 26.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF Factor versus Junction Temperature W--CDMA TEST SIGNAL 100 +20 3.84 MHz Channel BW +30 10 0 --10 1 (dB) PROBABILITY (%) LIFETIME BUY TJ, JUNCTION TEMPERATURE (°C) 0.1 --20 --30 --40 0.01 --50 W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8.5 dB @ 0.01% Probability on CCDF 0.001 --ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW --IM3 in 3.84 MHz BW --60 --70 0.0001 +IM3 in 3.84 MHz BW --80 0 2 4 6 8 10 PEAK--TO--AVERAGE (dB) Figure 13. CCDF W--CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single--Carrier Test Signal --25 --20 --15 --10 --5 0 5 10 15 20 f, FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 MTTF (HOURS) 108 25 MRF6P21190HR6 RF Device Data Freescale Semiconductor 7 f = 2200 MHz f = 2200 MHz LIFETIME BUY Zload Zsource f = 2000 MHz f = 2000 MHz VDD = 28 Vdc, IDQ = 1900 mA, Pout = 44 W Avg. f MHz Zsource Ω Zload Ω 2000 5.63 -- j12.88 3.43 -- j10.06 2110 4.36 -- j10.02 3.22 -- j7.13 2140 4.56 -- j8.49 3.39 -- j6.07 2170 5.11 -- j7.41 3.76 -- j5.45 2200 5.42 -- j6.67 3.69 -- j5.16 Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Input Matching Network + Device Under Test -- -Z source Output Matching Network + Z load LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Zo = 25 Ω Figure 15. Series Equivalent Source and Load Impedance MRF6P21190HR6 8 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS 2X bbb G 4 1 2 3 4 T A B M M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M--1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. B (FLANGE) 4X K M B L 4X Q A A D aaa M T A M B M ccc ccc T A M M B M M T A M B M R (LID) N (LID) F H C E PIN 5 M (INSULATOR) bbb M T A M B S T SEATING PLANE (INSULATOR) bbb M T A M M B M DIM A B C D E F G H K L M N Q R S aaa bbb ccc INCHES MIN MAX 1.615 1.625 0.395 0.405 0.150 0.200 0.455 0.465 0.062 0.066 0.004 0.007 1.400 BSC 0.082 0.090 0.117 0.137 0.540 BSC 1.219 1.241 1.218 1.242 0.120 0.130 0.355 0.365 0.365 0.375 0.013 REF 0.010 REF 0.020 REF STYLE 1: PIN 1. 2. 3. 4. 5. MILLIMETERS MIN MAX 41.02 41.28 10.03 10.29 3.81 5.08 11.56 11.81 1.57 1.68 0.10 0.18 35.56 BSC 2.08 2.29 2.97 3.48 13.72 BSC 30.96 31.52 30.94 31.55 3.05 3.30 9.01 9.27 9.27 9.53 0.33 REF 0.25 REF 0.51 REF DRAIN DRAIN GATE GATE SOURCE CASE 375D--05 ISSUE E NI--1230 MRF6P21190HR6 RF Device Data Freescale Semiconductor 9 PRODUCT DOCUMENTATION Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Date 4 Dec. 2008 LIFETIME BUY Revision Description • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, p. 1, 2 • Removed Lower Thermal Resistance and Low Gold Plating bullets from Features section as functionality is standard, p. 1 • Removed Total Device Dissipation from Max Ratings table as data was redundant (information already provided in Thermal Characteristics table), p. 1 • Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table and related “Continuous use of maximum temperature will affect MTTF” footnote added, p. 1 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), and added “Measured in Functional Test”, On Characteristics table, p. 2 • Removed Forward Transconductance from On Characteristics table as it no longer provided usable information, p. 2 • Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 3 • Adjusted scale for Fig. 5, Two--Tone Power Gain versus Output Power and Fig. 6, Third Order Intermodulation Distortion versus Output Power, to better match the device’s capabilities, p. 5 • Removed lower voltage tests from Fig. 11, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 6 • Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7 • Added Product Documentation and Revision History, p. 10 5 Dec. 2010 • Corrected data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13232, and Product Discontinuance Notification number, PCN14260, adding applicable overlay, p. 1, 2 LAST ORDER 1 JUL 11 LAST SHIP 30 JUN 12 Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers MRF6P21190HR6 10 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2004--2006, 2008, 2010. All rights reserved. MRF6P21190HR6 Document Number: RF Device Data MRF6P21190HR6 Rev. 5,12/2010 Freescale Semiconductor 11