FREESCALE MRF8S7235N

Freescale Semiconductor
Technical Data
Document Number: MRF8S7235N
Rev. 0, 6/2012
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
MRF8S7235NR3
Designed for base station applications with frequencies from 728 to
768 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ =
1400 mA, Pout = 63 Watts Avg., IQ Magnitude Clipping, Channel
Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF.
Frequency
(MHz)
Gps
(dB)
ηD
(%)
Output PAR
(dB)
ACPR
(dBc)
728
20.0
36.1
6.3
--38.1
748
20.2
36.0
6.4
--39.0
768
20.1
35.9
6.4
--38.7
728--768 MHz, 63 W AVG., 28 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFET
• Capable of Handling 10:1 VSWR, @ 32 Vdc, 748 MHz, 360 Watts CW Output
Power (3 dB Input Overdrive from Rated Pout), Designed for
Enhanced Ruggedness
• Typical Pout @ 1 dB Compression Point ≃ 260 Watts CW
Features
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C Operation
• Designed for Digital Predistortion Error Correction Systems
OM--780--2
PLASTIC
• Optimized for Doherty Applications
• 225°C Capable Plastic Package
• In Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain--Source Voltage
VDSS
--0.5, +70
Vdc
Gate--Source Voltage
VGS
--6.0, +10
Vdc
Operating Voltage
VDD
32, +0
Vdc
Storage Temperature Range
Tstg
--65 to +150
°C
TC
150
°C
TJ
225
°C
Symbol
Value (2,3)
Case Operating Temperature
Operating Junction Temperature
(1,2)
Table 2. Thermal Characteristics
Characteristich
Thermal Resistance, Junction to Case
Case Temperature 80°C, 63 W CW, 28 Vdc, IDQ = 1400 mA, 728 MHz
Case Temperature 82°C, 250 W CW, 28 Vdc, IDQ = 1400 mA, 728 MHz
RθJC
0.33
0.29
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MRF8S7235NR3
1
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
2
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
3
260
°C
Per JESD22--A113, IPC/JEDEC J--STD--020
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 70 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate--Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
μAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 920 μAdc)
VGS(th)
1.5
2.3
3.0
Vdc
Gate Quiescent Voltage
(VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test)
VGS(Q)
2.3
3.0
3.8
Vdc
Drain--Source On--Voltage
(VGS = 10 Vdc, ID = 3.4 Adc)
VDS(on)
0.1
0.18
0.3
Vdc
Characteristic
Off Characteristics
On Characteristics
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg., f = 728 MHz,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
18.8
20.0
21.8
dB
Drain Efficiency
ηD
34.5
36.1
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
PAR
5.8
6.3
—
dB
ACPR
—
--38.1
--35.5
dBc
IRL
—
--16
--10
dB
Input Return Loss
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg.,
Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
ηD
(%)
728 MHz
20.0
36.1
748 MHz
20.2
768 MHz
20.1
1. Part internally matched both on input and output.
Output PAR
(dB)
ACPR
(dBc)
IRL
(dB)
6.3
--38.1
--16
36.0
6.4
--39.0
--17
35.9
6.4
--38.7
--15
(continued)
MRF8S7235NR3
2
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 728--768 MHz Bandwidth
Pout @ 1 dB Compression Point, CW
P1dB
—
260
—
W
IMD Symmetry @ 107 W PEP, Pout where IMD Third Order
Intermodulation  30 dBc
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
—
10
—
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
—
40
—
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout = 63 W Avg.
GF
—
0.3
—
dB
Gain Variation over Temperature
(--30°C to +85°C)
∆G
—
0.0124
—
dB/°C
∆P1dB
—
0.005
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C)
MRF8S7235NR3
RF Device Data
Freescale Semiconductor, Inc.
3
B1
C6
C1
C9
C19
C10
C14
R2
C15
C7 C2
C21
C11*
C23 C25
C13*
C16
C3
C28*
C17*
C18
C12*
CUT OUT AREA
R1
C31
C30*
C29*
C27*
C24 C26
C22
C8
C20 C4*
C5*
MRF8S7235N
Rev. 4a
*C4, C5, C11, C12, C13, C17, C27, C28, C29 and C30 are mounted vertically.
Figure 1. MRF8S7235NR3 Test Circuit Component Layout
Table 6. MRF8S7235NR3 Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
B1
Ferrite Bead
MPZ2012S300A
Murata
C1, C2, C3, C4, C5
22 μF Chip Capacitors
C5750KF1H226ZT
TDK
C6, C7, C8
3.3 μF Chip Capacitors
C3225JB1H335MT
TDK
C9, C19, C20
68 pF Chip Capacitors
ATC100B680JT500XT
ATC
C10
12 pF Chip Capacitor
ATC100B120JT500XT
ATC
C11, C12
10 pF Chip Capacitors
ATC100B100CT500XT
ATC
C13
2.7 pF Chip Capacitor
ATC100B2R7CT500XT
ATC
C14
110 pF Chip Capacitor
ATC100B111JT500XT
ATC
C15, C16, C17, C18, C27
3.6 pF Chip Capacitors
ATC100B3R6CT500XT
ATC
C21, C22
15 pF Chip Capacitors
ATC100B150JT500XT
ATC
C23, C24
6.2 pF Chip Capacitors
ATC100B6R2CT500XT
ATC
C25, C26
8.2 pF Chip Capacitors
ATC100B8R2CT500XT
ATC
C28
3.3 pF Chip Capacitor
ATC100B3R3CT500XT
ATC
C29
1.0 pF Chip Capacitor
ATC100B1R0BT500XT
ATC
C30
39 pF Chip Capacitor
ATC100B390JT500XT
ATC
C31
470 μF Electrolytic Capacitor
MCGPR63V477M13X26-RH
Multicomp
R1
27 KΩ, 1/4 W Chip Resistor
CRCW120627K0JNEA
Vishay
R2
4.75 Ω, 1/4 W Chip Resistor
CRCW12064R75FNEA
Vishay
PCB
0.030″, εr = 3.5
RF35--A2
Taconic
MRF8S7235NR3
4
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
20
PARC
18
35
34
Gps
19
36
--35
--10
--36
--12
--37
17
ACPR
16
15
--38
--39
IRL
--40
14
710
720
730
740
750
760
770
780
790
--14
--16
--18
--20
--1.1
--1.2
--1.3
--1.4
--1.5
PARC (dB)
ηD
IRL, INPUT RETURN LOSS (dB)
Gps, POWER GAIN (dB)
37
Input Signal PAR = 7.5 dB @ 0.01% Probability
on CCDF
21
ηD, DRAIN
EFFICIENCY (%)
38
VDD = 28 Vdc, Pout = 63 W (Avg.), IDQ = 1400 mA
23 Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
22
ACPR (dBc)
24
--1.6
f, FREQUENCY (MHz)
IMD, INTERMODULATION DISTORTION (dBc)
Figure 2. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ Pout = 63 Watts Avg.
--10
VDD = 28 Vdc, Pout = 100 W (PEP), IDQ = 1400 mA
Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 748 MHz
--20
IM3--U
--30
IM3--L
IM5--U
--40
IM5--L
--50
--60
IM7--L
IM7--U
1
10
100
TWO--TONE SPACING (MHz)
21
0
20
19
18
17
16
VDD = 28 Vdc, IDQ = 1400 mA, f = 748 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF
--1
--1 dB = 59 W
--5
PARC
ACPR
--4
30
50
60
--25
40
--2 dB = 80 W
ηD
--3
--20
50
Gps
--2
70
--3 dB = 110 W
70
90
110
30
--30
--35
ACPR (dBc)
1
ηD, DRAIN EFFICIENCY (%)
22
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
Gps, POWER GAIN (dB)
Figure 3. Intermodulation Distortion Products
versus Two--Tone Spacing
--40
20
--45
10
130
--50
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
MRF8S7235NR3
RF Device Data
Freescale Semiconductor, Inc.
5
TYPICAL CHARACTERISTICS
728 MHz
19 768 MHz
ηD
0
60
--10
50
ACPR
728 MHz
40
30
748 MHz
768 MHz
18
70
20
768 MHz
17
1
10
10
300
100
--20
--30
--40
ACPR (dBc)
VDD = 28 Vdc, IDQ = 1400 mA, Single--Carrier
W--CDMA, 3.84 MHz Channel Bandwidth
22 Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
21
748 MHz
Gps
20
ηD, DRAIN EFFICIENCY (%)
Gps, POWER GAIN (dB)
23
--50
--60
Pout, OUTPUT POWER (WATTS) AVG.
Figure 5. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
10
24
VDD = 28 Vdc
Pin = 0 dBm
IDQ = 1400 mA
22
5
0
Gain
IRL (dB)
GAIN (dB)
20
18
--5
16
--10
14
--15
IRL
12
650
675
700
725
750
775
800
825
--20
850
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W--CDMA TEST SIGNAL
100
10
0
--10
Input Signal
--30
0.1
0.01
W--CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
0.001
0.0001
3.84 MHz
Channel BW
--20
1
(dB)
PROBABILITY (%)
10
0
1
2
3
4
5
6
--40
--50
--60
+ACPR in 3.84 MHz
Integrated BW
--ACPR in 3.84 MHz
Integrated BW
--70
--80
7
8
9
PEAK--TO--AVERAGE (dB)
Figure 7. CCDF W--CDMA IQ Magnitude
Clipping, Single--Carrier Test Signal
10
--90
--100
--9
--7.2 --5.4
--3.6 --1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 8. Single--Carrier W--CDMA Spectrum
MRF8S7235NR3
6
RF Device Data
Freescale Semiconductor, Inc.
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
710
0.95 - j0.82
1.19 - j1.03
720
0.93 - j0.81
1.05 - j0.99
730
0.89 - j0.77
0.92 - j0.91
740
0.87 - j0.73
0.85 - j0.82
750
0.89 - j0.73
0.83 - j0.78
760
0.92 - j0.77
0.83 - j0.77
770
0.89 - j0.81
0.79 - j0.76
780
0.80 - j0.77
0.71- j0.68
790
0.70 - j0.66
0.61 - j0.56
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
Input
Matching
Network
= Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Zsource
Zload
Figure 9. Series Equivalent Source and Load Impedance
MRF8S7235NR3
RF Device Data
Freescale Semiconductor, Inc.
7
VDD = 28 Vdc, IDQ = 1200 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Output Power
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
728
1.00 - j0.80
0.50 - j0.70
55.3
339
54.1
56.2
417
57.2
748
0.70 - j1.10
0.50 - j0.60
55.4
347
53.9
56.2
417
56.9
768
0.80 - j1.25
0.50 - j0.60
55.3
339
53.5
56.1
407
56.9
(1) Load impedance for optimum P1dB power.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Zsource
Zload
Figure 10. Load Pull Performance — Maximum P1dB Tuning
VDD = 28 Vdc, IDQ = 1200 mA, Pulsed CW, 10 μsec(on), 10% Duty Cycle
Max Drain Efficiency
P1dB
P3dB
f
(MHz)
Zsource
(Ω)
Zload (1)
(Ω)
(dBm)
(W)
ηD (%)
(dBm)
(W)
ηD (%)
728
1.00 - j0.80
1.40 + j0.20
52.4
174
67.4
53.1
204
70.0
748
0.70 - j1.10
1.20 + j0.10
52.6
182
67.0
53.5
224
69.9
768
0.80 - j1.25
1.10 + j0.20
52.6
182
67.1
53.3
214
69.9
(1) Load impedance for optimum P1dB efficiency.
Zsource = Impedance as measured from gate contact to ground.
Zload = Impedance as measured from drain contact to ground.
Input
Load Pull
Tuner
Output
Load Pull
Tuner
Device
Under
Test
Zsource
Zload
Figure 11. Load Pull Performance — Maximum Drain Efficiency Tuning
MRF8S7235NR3
8
RF Device Data
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
MRF8S7235NR3
RF Device Data
Freescale Semiconductor, Inc.
9
MRF8S7235NR3
10
RF Device Data
Freescale Semiconductor, Inc.
MRF8S7235NR3
RF Device Data
Freescale Semiconductor, Inc.
11
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File
Development Tools
• Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
0
June 2012
Description
• Initial Release of Data Sheet
MRF8S7235NR3
12
RF Device Data
Freescale Semiconductor, Inc.
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E 2012 Freescale Semiconductor, Inc.
MRF8S7235NR3
Document
Number:
RF
Device
Data MRF8S7235N
Rev. 0, 6/2012
Freescale
Semiconductor, Inc.
13