CG2 / DG2 VISHAY Vishay Semiconductors Standard Sinterglass Diode Features • Specially designed for clamping circuits, horizontal deflection systems and damper applications • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • 2.0 ampere operation at Tamb = 50 °C with no thermal runaway • Hermetically sealed package Mechanical Data Case: DO-204AP Sintered glass case Terminals: Solder plated axial leads, solderable per MILSTD- 750, Method 2026 17031 Polarity: Color band denotes cathode end Mounting Position: Any Weight: approx. 560 mg Parts Table Part Type differentiation Package CG2 VRRM = 1400 V DO-204AP(G-1) DG2 VRRM = 1500 V DO-204AP(G-1) Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage = Repetitive peak reverse voltage Test condition see electrical characteristics Part Symbol Value Unit CG2 VR = VRRM 1400 V DG2 VR = VRRM 1500 V Maximum average forward rectified current 0.375 " (9.5 mm) lead length at Tamb = 50 °C IF(AV) 2.0 A Peak forward surge current 8.3 ms single half sine wave superimposed on rated load (JEDEC Method) IFSM 40 A Maximum full load reverse current full cycle average 0.375 " (9.5 mm) lead length at Tamb =100 °C IR(AV) 200 µA TJ, TSTG - 55 to + 175 °C Operating junction and storage temperature range Maximum Thermal Resistance Tamb = 25 °C, unless otherwise specified Parameter Typical thermal resistance 1) 1) Test condition Symbol Value Unit RθJA 55 K/W Thermal resistance from junction to ambient at 0.375 " (9.5 mm) lead length, P.C.B. mounted Document Number 86082 Rev. 1.3, 11-Aug-04 www.vishay.com 1 CG2 / DG2 VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Part Symbol Max Unit 1.1 V IR 5.0 µA IR 100 µA CG2 trr 15 µs DG2 trr 20 µs CG2 trr 1.0 1.5 µs DG2 trr 1.0 1.5 µs Cj 15 Maximum instantaneous forward voltage IF = 2.0 A VF Maximum reverse current VR = VRRM, Tamb = 25 °C VR = VRRM, Tamb = 100 °C Maximum reverse recovery time IF = 0.5 A, IR = 50 mA IF = 0.5 A, IR = 1.0 A, Ir = 0.25 A Typical junction capacitance VR = 4.0 V, f = 1 MHz Min Typ. pF Resistive or Inductive Load 1.5 0.375" (9.5mm) Lead Length Ipk/IAV = π 1.0 Capacitance Load Ipk/IAV = 5.0 10 20 0.5 0 0 25 50 75 100 125 150 Peak Forward Surge Current (A) 50 8.3ms Single Half Sine-Wave (JEDEC Method) 40 TJ = 25°C No Load Condition 30 20 TJ = TJmax. 10 0 1 10 Number of Cycles at 60 Hz 2 1 TJ = 25°C 0.1 Pulse Width = 300µs 1% Duty Cycle 0.01 0.4 0.6 0.8 1.2 1.0 1.4 1.6 Instantaneous Forward Voltage (V) Figure 3. Typical Instantaneous Forward Characteristics 10 TJ = 125°C 1 0.1 TJ = 25°C 0.01 0 100 Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com TJ = 150°C gcg2_03 Figure 1. Forward Current Derating Curve gcg2_02 10 175 Ambient Temperature (°C) gcg2_01 Instantaneous Forward Current (A) 2.0 Instantaneous Reverse Current (µA) Average Forward Rectified Current (A) Typical Characteristics (Tamb = 25 °C unless otherwise specified) gcg2_04 20 40 60 80 100 Percent of Rated Peak Reverse Voltage (%) Figure 4. Typical Reverse Characteristics Document Number 86082 Rev. 1.3, 11-Aug-04 CG2 / DG2 VISHAY Vishay Semiconductors Junction Capacitance (pF) 30 TJ = 25°C f = 1.0 MHz Vsig = 50mVp-p 10 1 10 1 100 Reverse Voltage (V) gcg2_05 Figure 5. Typical Junction Capacitance Package Dimensions in mm (Inches) 0.86 (0.034) 0.71 (0.028) DIA. 25.4 (1.0) MIN. 6.1 (0.240) MAX. 3.8 (0.150) 2.5 (0.100) DIA. 25.4 (1.0) MIN. 17030 Document Number 86082 Rev. 1.3, 11-Aug-04 www.vishay.com 3 CG2 / DG2 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 86082 Rev. 1.3, 11-Aug-04