MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54583WP 8-UNIT 400mA DARLIGNON TRANSISTOR ARRAY DESCRIPTION M54583WP is eight-circuit collector-current sink type Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply. FEATURES ● High breakdown voltage (BVCEO > 50V) ● High-current driving (IC(max) = 400mA) ● Active L-level input ● With input clamping diodes PIN CONFIGURATION INPUT 18 →O1 IN2→ 2 17 →O2 IN3→ 3 16 →O3 IN4→ 4 15 →O4 IN5→ 5 14 →O5 IN6→ 6 13 →O6 IN7→ 7 12 →O7 IN8→ 8 11 →O8 10 9 GND APPLICATIONS Interfaces between microcomputers and high-voltage, high current drive systems, drives of relays and printers, and MOS-bipolar logic IC interfaces FUNCTION The M54583 is produced by adding PNP transistors to M54523 inputs. Eight circuits having active L-level inputs are provided. Resistance of 7kΩ and diode are provided in series between each input and PNP transistor base. The input diode is intended to prevent the flow of current from the input to the VCC. Without this diode, the current flow from “H” input to the VCC and the “L” input circuits is activated, in such case where one of the inputs of the 8 circuits is “H” and the others are “L” to save power consumption. The diode is inserted to prevent such misoperation. This device is most suitable for a driver using NMOS IC output especially for the driver of current sink. Collector current is 400mA maximum. Collector-emitter supply voltage is 50V. IN1→ 1 OUTPUT Vcc Package type 18P4X CIRCUIT DIAGRAM Vcc 7K INPUT OUTPUT 2.7K 7K 7.2K 3K GND The eight circuits share the VCC and GND. The diode, indicated with the dotted line, is parasitic, and cannot be used. Unit:Ω ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75℃) Symbol VCC VCEO VI IC Pd Topr Tstg Parameter Supply voltage Collector-emitter voltage Input voltage Collector current Power dissipation Operating temperature Storage temperature Conditions Output , H Current per circuit output, L Ta = 25℃, when mounted on board Ratings 10 – 0.5 ～ + 50 – 0.5 ～ VCC 400 1.79 – 20 ～ + 75 – 55 ～ + 125 Unit V V V mA W ℃ ℃ Jul-2011 MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54583WP 8-UNIT 400mA DARLIGNON TRANSISTOR ARRAY RECOMMENDED OPERATING (Unless otherwise noted, Ta = –20 ~ +75℃) Symbol min Limits typ max 4 5 8 0 － 350 0 － 200 VCC-0.7 － － VCC VCC-3.6 Parameter VCC Supply voltage Collector current (Current per 1 circuit when 8 circuits are coming on simultaneously) IC VIH VIL Duty Cycle no more than 10% Duty Cycle no more than 34% Unit V mA “H” input voltage “L” input voltage 0 V V ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = －20～＋75℃） Symbol Parameter V(BR)CEO Test conditions Collector-emitter breakdown voltage Collector-emitter saturation voltage VS = 50V, VI = 0.2V min Limits typ＊ max 50 － － 1.2 0.98 －320 2.2 1.6 －600 μA Unit V II Input current VI = VCC－3.6V － － － ICC Supply current (one circuit coming on) VCC = 5V, VI = VCC －3.6V － 1.9 3.0 mA hFE DC amplification factor VCE = 4V, VCC = 5V, IC = 350mA, Ta = 25℃ 2000 3500 － － VCE(sat) VI = VCC－3.6V IC = 350mA IC = 200mA V *：The typical values are those measured under ambient temperature (Ta) of 25℃. There is no guarantee that these values are obtained under any conditions. SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25℃） Symbol ton toff Parameter Turn-on time Turn-off time min — — CL = 15pF（note 1） typ 130 3200 Unit max — — ｎｓ ｎｓ TIMING DIAGRAM NOTE 1 TEST CIRCUIT INPUT Limits Test conditions VCC Measured device INPUT RL 50% 50% OUTPUT PG 50Ω OUTPUT CL 50% ｔon 50% ｔoff (1) Pulse generator (PG) characteristics: PRR = 1kHz, tw = 10μs, tr = 6ns, tf = 6ns, ZO = 50Ω ,VI = 0.4 to 4V (2) Input-output conditions : RL = 30Ω, Vo = 10V , VCC = 4V (3) Electrostatic capacity CL includes floating capacitance at connections and input capacitance at probes Jul-2011 2 MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54583WP 8-UNIT 400mA DARLIGNON TRANSISTOR ARRAY TYPICAL CHARACTERISTICS Output Saturation Voltage Collector Current Characteristics Thermal Derating Factor Characteristics 500 2.0 Collector current IC(mA) Power dissipation Pd(W) M54583WP 1.5 1.0 0.5 0 0 25 50 75 300 Ta=75℃ 200 Ta=25℃ 100 Ta=-20℃ 0 100 0 0.5 1.5 2.0 Duty-Cycle-Collector current Characteristics 500 400 ① ② 300 ③ 200 ④ ⑤ ⑥ ⑦ ⑧ •The collector current values represent the current per circuit. •Repeated frequency > 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Vcc=5V •Ta = 25℃ 100 0 20 40 60 80 Collector current IC(mA) Duty-Cycle-Collector current Characteristics 500 0 ① 400 300 ② ③ 200 0 0 60 80 100 Input Characteristics DC Amplification Factor Collector Current Characteristics 4 DC amplification factor hFE 7 -0.8 -0.6 Ta=-20℃ Ta=25℃ -0.4 -0.2 Ta=75℃ 1 40 Duty cycle (%) 10 0 20 Duty cycle (%) VCC=5V 0 ④ ⑤ ⑥ ⑦ ⑧ •The collector current values represent the current per circuit. •Repeated frequency > 10Hz •The value in the circle represents the value of the simultaneously-operated circuit. •Vcc=5V •Ta = 75℃ 100 100 -1.0 Input current II(mA) 1.0 Output saturation voltage VCE(sat)(V) Ambient temperature Ta(℃) Collector current IC(mA VI=1.4V VCC=5V 400 2 3 4 5 3 2 10 3 7 5 Ta=75℃ 3 Ta=25℃ Ta=-20℃ 2 10 2 1 10 5 Supply voltage-Input voltage VCC–VI(V) VCC=5V VCE=4V 2 3 5 7 10 2 2 3 5 7 10 3 Collector current IC(mA) Jul-2011 3 MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54583WP 8-UNIT 400mA DARLIGNON TRANSISTOR ARRAY Grounded Emitter Transfer Characteristics Supply Current Characteristics 5 VCC=4V VCE=4V 300 VI=0V Supply current ICC(mA) Collector current IC(mA) 400 Ta=75℃ Ta=25℃ 200 Ta=-20℃ 100 0 0 1 2 3 4 Ta=25℃ 3 2 Supply voltage-Input voltage VCC–VI(V) Ta=75℃ 1 0 4 Ta=-20℃ 0 2 4 6 8 10 Supply Voltage VCC(V) Jul-2011 4 MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY> M54583WP 8-UNIT 400mA DARLIGNON TRANSISTOR ARRAY PACKAGE OUTLINE Jun-2011 5